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19 Feb 2001

Volume 78, Issue 8, pp. 1023-1163

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Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee

Appl. Phys. Lett. 78, 1023 (2001); http://dx.doi.org/10.1063/1.1347006 (3 pages) | Cited 41 times

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Low dark current InAs/GaAs quantum-dot infrared photodetectors (QDIPs) are demonstrated. The dark current is reduced by over three orders of magnitude by using a thin AlGaAs current blocking layer. This thin AlGaAs layer reduces the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with a peak detection wavelength at 6.5μm. The corresponding detectivity is 2.5×109 cm Hz1/2/W1/2, which is the highest detectivity reported for a QDIP at 77 K. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Injection-seeded terahertz-wave parametric oscillator

Kazuhiro Imai, Kodo Kawase, Jun-ichi Shikata, Hiroaki Minamide, and Hiromasa Ito

Appl. Phys. Lett. 78, 1026 (2001); http://dx.doi.org/10.1063/1.1350420 (3 pages) | Cited 32 times

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The narrow linewidth operation of a THz-wave parametric oscillator was achieved through the use of narrow linewidth laser injection. THz-wave parametric oscillation, generated by a LiNbO3 crystal pumped with a single longitudinal mode Q-switched Nd:YAG laser, was injection seeded with a continuous-wave Yb:fiber laser. The measured THz-wave linewidth was 200 MHz, which corresponded to the measurement resolution limit. © 2001 American Institute of Physics.
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84.30.Ng Oscillators, pulse generators, and function generators

InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region

C. Becker, I. Prevot, X. Marcadet, B. Vinter, and C. Sirtori

Appl. Phys. Lett. 78, 1029 (2001); http://dx.doi.org/10.1063/1.1348316 (3 pages) | Cited 25 times

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Midinfrared (3.7–5.3 μm) electroluminescent devices based on a quantum-cascade (QC) design have been demonstrated using InAs/AlSb heterostructures, grown on GaSb substrates. The very high conduction band discontinuity (>2 eV) of this material system allows the design of QC devices at very short wavelengths. Well-resolved luminescence peaks were observed up to 300 K, with a full-width-at-half-maximum to peak wavelength ratio (Δλ/λ) of the order of 8%. The emission wavelengths are in good agreement with the results of our model. The emitted optical power is lower than that predicted, due to a nonoptimized electron injection into the active region. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
42.60.By Design of specific laser systems

Photons confined in hollow microspheres

M. V. Artemyev, U. Woggon, and R. Wannemacher

Appl. Phys. Lett. 78, 1032 (2001); http://dx.doi.org/10.1063/1.1350423 (3 pages) | Cited 25 times

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Incorporation of CdSe quantum dots into a thin (<1 μm) surface shell of polymer microspheres (R ∼ 2–4 μm) is achieved. The room-temperature emission spectra of single, hollow microcavities show several, spectrally well-separated cavity modes in the red-orange spectral range which have been assigned to high-Q whispering gallery modes (WGM) with radial quantum number n = 1 and high angular quantum number l. An enhancement of the cavity finesse Q by a factor of about 10 with respect to CdSe-doped bulk polymer microspheres is found. © 2001 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Et II-VI semiconductors

Wide-bandwidth high-frequency electro-optic modulator based on periodically poled LiNbO3

Yan-qing Lu, Min Xiao, and Gregory J. Salamo

Appl. Phys. Lett. 78, 1035 (2001); http://dx.doi.org/10.1063/1.1350426 (3 pages) | Cited 21 times

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We propose a high-frequency traveling-wave integrated electro-optic modulator based on a periodically poled LiNbO3. The traveling velocity of the optical wave and the electrical wave velocity in the waveguide can be quasimatched due to the periodic structure. Using this design, a modulation frequency of several hundred GHz can be realized. Wide-bandwidth modulation is also achievable by employing an aperiodic domain grating. © 2001 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.79.Hp Optical processors, correlators, and modulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Holographic encoding of fine-pitched micrograting structures in amorphous SiO2 thin films on silicon by a single femtosecond laser pulse

Ken-ichi Kawamura, Nobuhiko Sarukura, Masahiro Hirano, and Hideo Hosono

Appl. Phys. Lett. 78, 1038 (2001); http://dx.doi.org/10.1063/1.1347007 (3 pages) | Cited 37 times

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Fine-pitched micrograting structures were holographically encoded in amorphous (a-) SiO2 thin films on silicon wafers by colliding a pair of focused pulses split from a single, mode-locked Ti: sapphire, femtosecond laser. A method enhancing the third-harmonic generation resulting from the nonlinearity of air adjusted the optical paths of the two pulses. Surface-relief-type gratings were formed on SiO2 glasses due to laser ablation when the laser power exceeded more than 0.3 mJ/pulse, while shallow grating structures were imprinted on a-SiO2 thin films by volume compaction (∼3%) when the irradiation power was reduced to ∼50 μJ/pulse. The postirradiation deepening of the valley of the grating structure was possible with chemical etching. The minimal spacing of 430 nm was encoded using the 800 nm laser. © 2001 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Terahertz optical pulse generation with a simple encoding scheme using spatial slicing technique

Ka-Suen Lee and Chester Shu

Appl. Phys. Lett. 78, 1041 (2001); http://dx.doi.org/10.1063/1.1327282 (3 pages) | Cited 3 times

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We propose and experimentally demonstrate a spatial slicing technique for the generation and encoding of a terahertz optical pulse train. The configuration consists simply of a group of optical delay lines arranged in a two-dimensional array. Optical pulse trains at repetition rates of 0.6 and 1.0 THz are achieved. With the use of spatial masks, different output signals can also be produced. The spatial slicing technique provides a feasibility to switch off selected optical pulses in a terahertz pulse train using low-speed switches. © 2001 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Fabrication of GaP/Al–oxide distributed Bragg reflectors for the visible spectrum

G. W. Pickrell, H. C. Lin, K. L. Chang, K. C. Hsieh, and K. Y. Cheng

Appl. Phys. Lett. 78, 1044 (2001); http://dx.doi.org/10.1063/1.1350597 (3 pages) | Cited 3 times

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Using very-low temperature (VLT) molecular-beam epitaxy (MBE), polycrystalline GaP/Al–oxide distributed Bragg reflectors (DBRs) have been fabricated. The use of high-energy band gap materials, such as GaP, allows for applications in the visible spectrum with minimal absorption of photons in the DBR. Through the use of VLT-MBE and control of the group-V overpressure, the microstructure can be controlled, resulting in either amorphous or polycrystalline material. Due to the nature of the amorphous material, the requirement of lattice matching is relaxed with no adverse effects to the underlying single crystal material. Two DBRs were fabricated, one reflecting at a wavelength of 550 nm and the other 480 nm. Using six pairs of polycrystalline GaP/Al–oxide, a reflectivity of ∼95% was achieved indicating a high-quality DBR suitable for device use. © 2001 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.79.Bh Lenses, prisms and mirrors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.86.+b Optical workshop techniques
81.05.Ea III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes

Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry–Perot lasers

D. E. Wohlert, K. Y. Cheng, and S. T. Chou

Appl. Phys. Lett. 78, 1047 (2001); http://dx.doi.org/10.1063/1.1350629 (3 pages) | Cited 10 times

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GaInAs quantum wire (QWR) heterostructures have been grown by molecular beam epitaxy using the strain-induced lateral-layer ordering (SILO) process. Broad-area Fabry–Perot QWR lasers have been fabricated from this material. The lasing wavelength from the QWR laser shifts at a rate of 0.9 Å/°C between 77 and 300 K compared to 4.6 Å/°C for a quantum well laser control sample. Furthermore, the gain spectra of the QWR laser are derived from the amplified spontaneous emission spectra at 77 and 300 K using the Hakki–Paoli method. The gain peak is also stabilized against temperature changes indicating that temperature stable lasing behavior seen in SILO grown GaInAs QWR Fabry–Perot laser diodes is due to a temperature stable band gap. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.Lt Quantum wires
81.07.Vb Quantum wires
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.16.Dn Self-assembly
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.45.+h Stimulated emission
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes

H. Kim, J. S. Horwitz, G. P. Kushto, S. B. Qadri, Z. H. Kafafi, and D. B. Chrisey

Appl. Phys. Lett. 78, 1050 (2001); http://dx.doi.org/10.1063/1.1350595 (3 pages) | Cited 44 times

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Zirconium-doped indium oxide (ZIO) thin films (∼2000 Å thick) have been deposited by pulsed-laser deposition on glass substrates without a postdeposition anneal. The structural, electrical and optical properties of these films have been investigated as a function of substrate temperature and oxygen partial pressure during deposition. Films were deposited at substrate temperatures ranging from 25 °C to 400 °C in O2 partial pressures ranging from 0.1 to 50 mTorr. The films (∼2000 Å thick) deposited at 200 °C in 25 mTorr of oxygen show electrical resistivities as low as 2.5×10−4 Ω cm, an average visible transmittance of 89%, and an optical band gap of 4.1 eV. The ZIO films were used as a transparent anode contact in organic light emitting diodes and the device performance was studied. The external quantum efficiency measured from these devices was about 0.9% at a current density of 100 A/m2. © 2001 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
78.66.Li Other semiconductors
68.55.-a Thin film structure and morphology
85.60.Jb Light-emitting devices
81.15.Fg Pulsed laser ablation deposition
81.05.Hd Other semiconductors

Transient response of a bilayer organic electroluminescent diode: Experimental and theoretical study of electroluminescence onset

L. Hassine, H. Bouchriha, J. Roussel, and J.-L. Fave

Appl. Phys. Lett. 78, 1053 (2001); http://dx.doi.org/10.1063/1.1350419 (3 pages) | Cited 12 times

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The experimental transient electroluminescence response of a bilayer organic light-emitting diode reported here shows an initial overshoot when sufficient direct current bias is superimposed to pulse excitation. Using a theoretical model giving the kinetic equations which govern the time evolution of electrical fields, currents and charge densities in the device, we calculate transient response of light emission. The results show a good agreement with experiments and evidence the charge carriers accumulation occurring in the region of organic–organic interface due to unipolar injection. Application of periodic excitation indicates that a characteristic time of 300 ms is needed to recover the initial electrical equilibrium state. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
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