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26 Feb 2001

Volume 78, Issue 9, pp. 1171-1311

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Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers

Q. Zou, H. E. Ruda, and B. G. Yacobi

Appl. Phys. Lett. 78, 1282 (2001); http://dx.doi.org/10.1063/1.1350425 (3 pages) | Cited 36 times

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Improved dielectric properties of lead zirconate titanate (PZT) films deposited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which were prepared by sol–gel processing. High dielectric constant (330 for stainless steel, 420 for titanium, and 450 for nickel foils), low dielectric loss (<2.2% for titanium and 8% for stainless steel), symmetric ferroelectric C–V characteristics and P–E curves were obtained. The LNO layers are shown to provide an effective diffusion barrier for Ni and Cr and to restrict oxide layer formation (i.e., TiOx or NiOx) between the PZT film and the metallic foils during annealing in air. © 2001 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer

Yoshihisa Fujisaki, Takeshi Kijima, and Hiroshi Ishiwara

Appl. Phys. Lett. 78, 1285 (2001); http://dx.doi.org/10.1063/1.1351535 (3 pages) | Cited 15 times

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We developed high-performance metal–ferroelectric–insulator–semiconductor (MFIS) structures with a damage-free and hydrogen-free Si3N4 buffer layer as an insulator. We fabricated Si3N4 films by nitriding Si substrates with N2 and/or atomic N radicals generated by an rf radical cell. In contrast to conventional Si3N4 films, the radical-nitride Si3N4 films showed no hysteresis or flat-band shift in the capacitance–voltage (C–V) characteristics even after high-temperature treatments, such as crystallization annealing of ferroelectric thin films deposited on the buffer Si3N4. Using this radical nitride Si3N4 as a buffer layer, we fabricated MFIS diodes with a Pt/Bi3.25La0.75Ti3O12/Si3N4/Si structure. These diodes had good hysteresis in their C–V characteristics, resulting from remnant polarization of the ferroelectric films. However, no other parasitic effects originating in charge trapping and/or detrapping were observed. © 2001 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.Kk Junction diodes
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Properties of electronic traps at silicon/1-octadecene interfaces

Samares Kar, Corinne Miramond, and Dominique Vuillaume

Appl. Phys. Lett. 78, 1288 (2001); http://dx.doi.org/10.1063/1.1351530 (3 pages) | Cited 26 times

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Silicon surfaces with (111) orientation were hydrogenated in NH4F solution. Alkyl chain monolayers were self-assembled on the hydrogen-terminated silicon (Si☒H) surface by the free-radical reaction of 1-octadecene and SiH, activated by ultraviolet (253.7 nm) illumination. Comprehensive electrical characterization of the metal/1-octadecene/silicon structures yielded experimental data on the (silicon–monolayer) interface trap parameters. The admittance data indicated the realization of a true silicon/organic-monolayer interface. The interface trap density obtained, for p-type silicon, was 1.7–3.0×1011/cm2 V over an energy range of 0.22–0.73 eV over the valence band edge. These interface trap densities can be considered remarkably low for a silicon interface formed around room temperature, and are an order of magnitude lower than what was obtained in the case of alkyl chain organic monolayers on naturally oxidized silicon surfaces. The interface trap density was found to be strongly influenced by the silicon doping type and density. This observation suggests that the position of the surface Fermi level has a strong influence on the quality of the octadecene–silicon interface. © 2001 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.16.Dn Self-assembly
81.07.Pr Organic-inorganic hybrid nanostructures
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
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