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26 Feb 2001

Volume 78, Issue 9, pp. 1171-1311

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Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots

Weidong Sheng and Jean-Pierre Leburton

Appl. Phys. Lett. 78, 1258 (2001); http://dx.doi.org/10.1063/1.1351851 (3 pages) | Cited 13 times

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We present a theoretical study of the electronic properties and intersubband optical transitions in vertically aligned double InAs self-assembled quantum dots (QDs) which are subject to an electric field along their growth axis. The electron properties are calculated as a function of the applied electric field by using an eight-band strain-dependent k⋅p Hamiltonian. Transitions between ground s states and excited p states are found to be almost three times stronger than in single dot, with strong field anisotropy. The system also exhibits field tunable transitions between the bonding and antibonding s states, with polarization along the growth axis. Midinfrared photodetectors consisting of vertically coupled double-quantum-dot layers are expected to exhibit enhanced sensibility and voltage tunability, compared to devices using single-quantum-dot layer. © 2001 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.67.Hc Quantum dots
73.21.La Quantum dots
78.20.Jq Electro-optical effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
71.15.-m Methods of electronic structure calculations

Observation of intersubband real-space transfer in GaAs/AlAs quantum-well structures due to Γ–X mixing

S. R. Schmidt, E. A. Zibik, A. Seilmeier, L. E. Vorobjev, A. E. Zhukov, and U. M. Ustinov

Appl. Phys. Lett. 78, 1261 (2001); http://dx.doi.org/10.1063/1.1351841 (3 pages) | Cited 7 times

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The Γ2–Xz1 intersubband dynamics in GaAs/AlAs quantum-well structures is investigated by time-resolved infrared pump and probe experiments. In the studied structure, the second Γ level in GaAs is nearly resonant to the first Xz level in AlAs, resulting in elastic Γ–X scattering. A biexponential behavior of ground-state recovery has been found with a time constant in the order of 1 ps for the Γ2–Γ1 relaxation and a time constant of 7 ps (at 10 K), which represents the Xz–Γ2 transfer. © 2001 American Institute of Physics.
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73.21.Fg Quantum wells
78.67.De Quantum wells
78.47.-p Spectroscopy of solid state dynamics

A fast, primary Coulomb blockade thermometer

Tobias Bergsten, Tord Claeson, and Per Delsing

Appl. Phys. Lett. 78, 1264 (2001); http://dx.doi.org/10.1063/1.1351526 (3 pages) | Cited 6 times

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We have measured the third derivative of the current–voltage characteristics, d3I/dV3, in a two-dimensional array of small tunnel junctions using a lock-in amplifier. We show that this derivative is zero at a voltage which scales linearly with the temperature and depends only on the temperature and natural constants, thus providing a primary thermometer. We demonstrate a measurement method which extracts the zero crossing voltage directly using a feedback circuit. This method requires only one voltage measurement, which makes it substantially faster than the original Coulomb blockade thermometry method. © 2001 American Institute of Physics.
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07.20.Dt Thermometers
85.25.Cp Josephson devices
73.23.Hk Coulomb blockade; single-electron tunneling
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

L. J. Huang, J. O. Chu, D. F. Canaperi, C. P. D’Emic, R. M. Anderson, S. J. Koester, and H.-S. Philip Wong

Appl. Phys. Lett. 78, 1267 (2001); http://dx.doi.org/10.1063/1.1342212 (3 pages) | Cited 48 times

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SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical vapor deposition process at 550 °C. An electron mobility of 40 000 cm2/V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
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