APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Feb 2001

Volume 78, Issue 9, pp. 1171-1311

Return to All Sections
back to top
RSS Feeds

Scanning impedance microscopy of electroactive interfaces

Sergei V. Kalinin and Dawn A. Bonnell

Appl. Phys. Lett. 78, 1306 (2001); http://dx.doi.org/10.1063/1.1350627 (3 pages) | Cited 31 times

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
A scanning probe technique based on the detection of the phase change of cantilever oscillations induced by a lateral bias applied to the sample is developed. This technique is used to investigate Σ5 grain boundary in Nb-doped SrTiO3 bicrystal. Tip bias, frequency, and driving amplitude dependence of cantilever response to sample ac bias were found to be in excellent agreement with the theoretical model. This technique, further referred to as scanning impedance microscopy, allows mapping of the local phase angle of complex microstructures. This technique is complemented by scanning surface potential microscopy (SSPM). Ramping the lateral dc bias during SSPM measurements allows the voltage characteristics of the grain boundary to be reconstructed and dc transport properties to be obtained by an equivalent circuit method. The combination of scanning impedance microscopy and scanning surface potential microscopy allows independent quantification of interface resistivity and capacitance, thus providing spatially resolved impedance spectra of complex microstructures. © 2001 American Institute of Physics.
Show PACS
61.72.Mm Grain and twin boundaries
68.35.Ct Interface structure and roughness
68.37.-d Microscopy of surfaces, interfaces, and thin films
72.20.Fr Low-field transport and mobility; piezoresistance

Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy

D. J. Fu, T. W. Kang, Sh. U. Yuldashev, N. H. Kim, S. H. Park, J. S. Yun, and K. S. Chung

Appl. Phys. Lett. 78, 1309 (2001); http://dx.doi.org/10.1063/1.1351516 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaN epilayers grown by molecular beam epitaxy were photoelectrochemically (PEC) oxidized in an aqueous KOH solution. The oxidation effect was investigated by defect-related photoconductivity and photoluminescence. The PEC treated GaN show decreased extrinsic photoresponse and concentration of deep level states in comparison with the as-grown sample. The PEC process also results in enhanced donor-bound exciton photoluminescence at 3.47 eV and restrained 3.4 eV band. No strain is detected in the PEC oxidized GaN. The 3.4 eV band is related to structural defects instead of oxygen impurities. Rather, the defects can be passivated by the PEC oxidation. © 2001 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.65.Mq Oxidation
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Pz Photoconduction and photovoltaic effects
82.45.Mp Thin layers, films, monolayers, membranes
82.50.Hp Processes caused by visible and UV light
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close