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26 Feb 2001

Volume 78, Issue 9, pp. 1171-1311

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Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

Weon G. Jeong, P. Daniel Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee

Appl. Phys. Lett. 78, 1171 (2001); http://dx.doi.org/10.1063/1.1350620 (3 pages) | Cited 23 times

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Five stacks of InAs quantum dots (QDs) with InGaAsP barriers were grown on (100) InP and luminescence characteristics were analyzed. Cross-sectional transmission electron microscopy shows that small dots with a lateral size of ∼30 nm and a height of ∼3 nm are formed with an areal density of ∼ 5×1010 cm−2. The QDs emit strong photoluminescence (PL) peaks in the range of 1.4–1.6 μm that can be controlled by nominal InAs thickness. The integrated PL intensity from QDs stays very high at room temperature as much as 20% of that at 10 K. At weak excitation, the carrier lifetimes are measured to be almost the same across the whole PL band at low temperature with a value of ∼4 ns and they remain at that value at room temperature. These characteristics strongly evidence that individual QDs are well isolated and have a strong carrier confinement at room temperature. © 2001 American Institute of Physics.
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81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.Hb Quantum dots (patterned in quantum wells)
73.63.Kv Quantum dots

Effect of nonradiative recombination on light emitting properties of two-dimensional photonic crystal slab structures

Han-Youl Ryu, Jeong-Ki Hwang, Dae-Sung Song, Il-Young Han, Yong-Hee Lee, and Dong-Hoon Jang

Appl. Phys. Lett. 78, 1174 (2001); http://dx.doi.org/10.1063/1.1350901 (3 pages) | Cited 23 times

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InGaAsP-based two-dimensional photonic crystal light emitting structures are fabricated by employing wafer fusion and characterized optically. The structure does not contain defect regions and the whole area of the photonic crystal is used for light generation and extraction. The effect of nonradiative recombination is studied as a function of pump power. The relative contribution of surface recombination can be as low as 10% as pump power increases since carrier recombination is dominated by Auger recombination. In spite of the large surface-to-volume ratio of the photonic crystal pattern, over four-fold enhancement of photoluminescence extraction efficiency is observed. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
73.25.+i Surface conductivity and carrier phenomena
78.55.Cr III-V semiconductors

Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers

Vincenzo Spagnolo, Mariano Troccoli, Gaetano Scamarcio, Cyrille Becker, Geneviève Glastre, and Carlo Sirtori

Appl. Phys. Lett. 78, 1177 (2001); http://dx.doi.org/10.1063/1.1351850 (3 pages) | Cited 21 times

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We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells

Three-dimensional photonic crystals based on macroporous silicon with modulated pore diameter

J. Schilling, F. Müller, S. Matthias, R. B. Wehrspohn, U. Gösele, and K. Busch

Appl. Phys. Lett. 78, 1180 (2001); http://dx.doi.org/10.1063/1.1351533 (3 pages) | Cited 59 times

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We report on the fabrication and optical characterization of a three-dimensional (3D) photonic crystal on the basis of macroporous silicon. The structure consists of a 2D array of air pores in silicon whose diameter is varied (modulated) periodically with depth. The bandstructure of the resulting 3D hexagonal photonic crystal is calculated and compared with transmission measurements. The described structure allows to adjust the dispersion relation along the pore axis almost independently from the dispersion relation in the plane perpendicular to the pore axis. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
81.05.Rm Porous materials; granular materials
71.20.Mq Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors

Nonlinear refractive beam shaping by an organic nonlinear absorber

John Robertson, Andrew Smith, Jason Duignan, Philip Milsom, and Grant Bourhill

Appl. Phys. Lett. 78, 1183 (2001); http://dx.doi.org/10.1063/1.1351518 (3 pages) | Cited 6 times

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The response of organic dyes to laser pulses is typically described solely by nonlinear absorption. Recently, spatial profiles of a nanosecond pulse exiting an organic nonlinear absorber have shown energy redistribution from a Gaussian input profile to a central spike and outer ring. It was suggested that the spike and ring resulted from both nonlinear absorption and nonlinear refraction. In this letter, the role of a thermal nonlinear refraction in beam shaping is demonstrated using single and time-delayed double picosecond pulses. It is concluded that the dynamics of nonlinear absorption and nonlinear refraction must be included to correctly describe the laser-material interaction. © 2001 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.70.Jk Polymers and organics

Diffraction gratings in polymer-dispersed liquid crystals recorded by means of polarization holographic technique

G. Cipparrone, A. Mazzulla, and G. Russo

Appl. Phys. Lett. 78, 1186 (2001); http://dx.doi.org/10.1063/1.1349867 (3 pages) | Cited 22 times

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We report an observation of holographic gratings recorded exposing a homogeneous mixture of pre-polymer and liquid crystal to a polarization light pattern. This polarization pattern is obtained by a superposition of two waves with orthogonal linear polarization. The idea to use this technique to realize holographic gratings come from the possibility of controlling the liquid crystal alignment inside the droplets, through the photoalignment, during the photoinduced polymerization process. On the contrary, the usual methods of writing diffraction gratings in polymer-dispersed liquid crystals are based on intensity holographic technique that controls the polymerization process. Diffraction gratings, composed of liquid crystal droplets having a particular internal alignment, are observed. © 2001 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Df Liquid crystals
61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
82.35.-x Polymers: properties; reactions; polymerization
82.50.-m Photochemistry

Nonvolatile grating in an azobenzene polymer with optimized molecular reorientation

Pengfei Wu, D. V. G. L. N. Rao, B. R. Kimball, M. Nakashima, and B. S. DeCristofano

Appl. Phys. Lett. 78, 1189 (2001); http://dx.doi.org/10.1063/1.1351532 (3 pages) | Cited 6 times

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We demonstrated a nonvolatile grating using an azobenzene polymer film with polarized two color beams. The reorientation of azobenzene molecules can be optimized when the two color light beams are polarized perpendicularly. The stored information can be read repeatedly without volatility with the same wavelength as the writing beam. © 2001 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.70.Jk Polymers and organics
42.40.Eq Holographic optical elements; holographic gratings
61.41.+e Polymers, elastomers, and plastics
42.79.Vb Optical storage systems, optical disks
78.66.Qn Polymers; organic compounds

High gain beam compression in new-generation thin-film x-ray waveguides

W. Jark, A. Cedola, S. Di Fonzo, M. Fiordelisi, S. Lagomarsino, N. V. Kovalenko, and V. A. Chernov

Appl. Phys. Lett. 78, 1192 (2001); http://dx.doi.org/10.1063/1.1350956 (3 pages) | Cited 30 times

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X-ray waveguides can compress an incident beam for microscopy applications above 8 keV photon energy to sizes smaller than 100 nm in one dimension, a range which is not routinely accessed with other x-ray optics (e.g., Fresnel zone plates). Beryllium, because of its low absorption, is expected to provide the highest intensity gain. Measured gains for a beryllium waveguide of 74 nm thickness exceed values of 100 at 13 and 20 keV photon energy, which is an improvement by an order of magnitude compared to previously reported performances. The same object works also at 8 keV with gain 43. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
41.50.+h X-ray beams and x-ray optics
42.79.Wc Optical coatings

Emission spectrum of hard x-rays, generated from iron, copper, and molybdenum targets by subpicosecond KrF laser pulses

N. Takeyasu, Y. Hirakawa, and T. Imasaka

Appl. Phys. Lett. 78, 1195 (2001); http://dx.doi.org/10.1063/1.1342777 (3 pages) | Cited 5 times

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K-shell emission spectra of iron, copper, and molybdenum in the range of 1.5–20 keV using a 500 fs KrF excimer laser have been observed and are reported herein. © 2001 American Institute of Physics.
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78.70.En X-ray emission spectra and fluorescence
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
61.82.Bg Metals and alloys

Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson

Appl. Phys. Lett. 78, 1198 (2001); http://dx.doi.org/10.1063/1.1350593 (3 pages) | Cited 24 times

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Continuous-wave (cw) indium-gallium nitride multiple-quantum-well laser diodes (LDs) were transferred from sapphire onto copper substrates using a two-step laser lift-off process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. CW operation was possible up to heatsink temperatures of 90 °C for LDs on Cu. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Pk Continuous operation

Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells

Chi-Kuang Sun, Yue-Kai Huang, Jian-Chin Liang, Amber Abare, and Steven P. DenBaars

Appl. Phys. Lett. 78, 1201 (2001); http://dx.doi.org/10.1063/1.1350598 (3 pages) | Cited 14 times

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We demonstrate coherent optical control of phonon oscillations using a femtosecond control pulse. The experiments were performed in InGaN/GaN multiple quantum wells. Coherent acoustic phonon oscillations was initiated with an UV femtosecond pulse. The subsequent manipulation, including magnitude and phase, of the coherent acoustic phonon oscillations was achieved using another UV femtosecond pulse by controlling the pulse time delay and intensity. © 2001 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors

Epitaxial LiNbO3 thin films grown by pulsed laser deposition for optical waveguides

G. Balestrino, S. Martellucci, P. G. Medaglia, A. Paoletti, G. Petrocelli, A. Tebano, A. Tucciarone, F. Gelli, E. Giorgetti, S. Sottini, and L. Tapfer

Appl. Phys. Lett. 78, 1204 (2001); http://dx.doi.org/10.1063/1.1350903 (3 pages) | Cited 9 times

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We have grown good-quality epitaxial LiNbO3 thin films on (0001) sapphire substrates using a pulsed laser deposition technique. The growth conditions permitted us to deposit c-axis oriented films avoiding the problem of the LiNb3O8 Li-deficient phase. The chemical composition of thin films was investigated by secondary ion mass spectrometry and resulted to coincide with the target composition. Guided propagation was demonstrated at 632 and 488 nm with thin films (∼1200 Å). © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
42.79.Gn Optical waveguides and couplers
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

R. L. Sellin, Ch. Ribbat, M. Grundmann, N. N. Ledentsov, and D. Bimberg

Appl. Phys. Lett. 78, 1207 (2001); http://dx.doi.org/10.1063/1.1350596 (3 pages) | Cited 94 times

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Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum-dot lasers are achieved by the application of an annealing and growth interruption step at 600 °C after the deposition of the dots. The transparency current is reduced to below 20 A/cm2 at room temperature. The internal differential quantum efficiency is increased from below 50% to above 90% by improvement of the barrier material and subsequent reduction of leakage current. A peak power of 3.7 W at 1140 nm lasing wavelength in pulsed operation at room temperature is demonstrated. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Low propagation losses of an Er:Y2O3 planar waveguide grown by alternate-target pulsed laser deposition

M. B. Korzenski, Ph. Lecoeur, B. Mercey, P. Camy, and J.-L. Doualan

Appl. Phys. Lett. 78, 1210 (2001); http://dx.doi.org/10.1063/1.1347026 (3 pages) | Cited 25 times

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We report on waveguiding properties in epitaxial Er:Y2O3 films grown by pulsed-laser deposition on sapphire [0001] substrate. Characterization of the as-grown films by x-ray diffraction, atomic force microscopy, and Rutherford backscattering revealed that the films were highly crystalline and textured along the [111] direction and possessed an average surface roughness of 2 nm for a 0.69-μm-thick film. The investigation of the emission spectra confirms the proper structural position for the Er3+ ions in the Y2O3 matrix and that the films guide optical waves along the entire length (5 mm) of the film yielding a propagation loss of <1 dB/cm at 800 nm. © 2001 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
81.15.Fg Pulsed laser ablation deposition
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.35.B- Structure of clean surfaces (and surface reconstruction)
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