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26 Feb 2001

Volume 78, Issue 9, pp. 1171-1311

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Stress evolution during Fe(001) epitaxy on GaAs(001)

G. Wedler, B. Wassermann, R. Nötzel, and R. Koch

Appl. Phys. Lett. 78, 1270 (2001); http://dx.doi.org/10.1063/1.1351527 (3 pages) | Cited 20 times

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We report on in situ stress measurements of Fe/GaAs(001), which enlighten the dynamics of the interface formation of this important magnetic metal/semiconductor system. At deposition temperatures of 300 and 450 K, the stress evolution during growth is very similar. In Fe films thicker than 6–7 nm, the stress is compressive owing to the misfit between the lattices of Fe and GaAs. Thinner films surprisingly are dominated by a tensile stress contribution due to considerable As (and Ga) interdiffusion even at 300 K. © 2001 American Institute of Physics.
Show PACS
68.60.Bs Mechanical and acoustical properties
68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase
66.30.Ny Chemical interdiffusion; diffusion barriers

Unipolar spin diodes and transistors

M. E. Flatté and G. Vignale

Appl. Phys. Lett. 78, 1273 (2001); http://dx.doi.org/10.1063/1.1348317 (3 pages) | Cited 68 times

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Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. © 2001 American Institute of Physics.
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72.25.Dc Spin polarized transport in semiconductors
85.75.Ff Reprogrammable magnetic logic
85.75.Hh Spin polarized field effect transistors
85.75.Ss Magnetic field sensors using spin polarized transport
75.60.Ch Domain walls and domain structure
75.50.Pp Magnetic semiconductors

Magnetic and optical properties of GaMnN magnetic semiconductor

M. Zajac, R. Doradziński, J. Gosk, J. Szczytko, M. Lefeld-Sosnowska, M. Kamińska, A. Twardowski, M. Palczewska, E. Grzanka, and W. Gȩbicki

Appl. Phys. Lett. 78, 1276 (2001); http://dx.doi.org/10.1063/1.1348302 (3 pages) | Cited 108 times

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Microcrystalline Ga1−xMnxN samples with Mn content up to x = 0.005 were grown by an ammonothermal method and were studied using various techniques. X-ray diffraction showed characteristic diffraction lines for hexagonal GaN phase mixed with a small contribution (<5%) from the Mn3N2 phase. Raman spectra exhibited characteristic peaks of pure GaN and modes that could be associated with Mn-induced lattice disorder. Electron spin resonance and magnetization measurements were consistent with the dominant Mn2+(d5) configuration of spin S = 5/2 which is responsible for the observed paramagnetic behavior of the GaMnN material. © 2001 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
75.50.Pp Magnetic semiconductors
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Minimization of noise-induced bit error rate in a high Tc superconducting dc/single flux quantum converter

Thomas Ortlepp, Hannes Toepfer, and Hermann F. Uhlmann

Appl. Phys. Lett. 78, 1279 (2001); http://dx.doi.org/10.1063/1.1341228 (3 pages) | Cited 8 times

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The thermally induced bit error rate of a rapid single flux quantum logic circuit is theoretically examined using the Fokker–Planck equation. The error rate versus design parameters of a high Tc dc/single flux quantum converter is derived. In comparison with other design methodologies, a vanishingly small error rate at optimal parameters can be achieved. © 2001 American Institute of Physics.
Show PACS
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
84.30.Sk Pulse and digital circuits
74.72.-h Cuprate superconductors
02.50.-r Probability theory, stochastic processes, and statistics
02.60.Pn Numerical optimization
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