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26 Feb 2001

Volume 78, Issue 9, pp. 1171-1311

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Electrochemical carbon nanotube field-effect transistor

M. Krüger, M. R. Buitelaar, T. Nussbaumer, C. Schönenberger, and L. Forró

Appl. Phys. Lett. 78, 1291 (2001); http://dx.doi.org/10.1063/1.1350427 (3 pages) | Cited 125 times

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We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with ∣EF∣ ≈ 0.3–0.5 eV, corresponding to a doping level of ≈ 1013 cm−2. Hole-doping increases in the electrolyte. © 2001 American Institute of Physics.
Show PACS
73.63.Fg Nanotubes
81.07.De Nanotubes
85.35.Kt Nanotube devices
85.65.+h Molecular electronic devices
82.45.Fk Electrodes
85.30.Tv Field effect devices

Flat panel display prototype using gated carbon nanotube field emitters

Q. H. Wang, M. Yan, and R. P. H. Chang

Appl. Phys. Lett. 78, 1294 (2001); http://dx.doi.org/10.1063/1.1351847 (3 pages) | Cited 85 times

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A flat panel display prototype has been fabricated using gated carbon nanotubes as electron emission source. The gate structure is made by a self-aligned method. The pixels are turned “on” and “off” by controlling the gate electrode with a 50 V source. The operating properties of the display show much promise for further development. It is believed that this technology can lead to easy-to-make and inexpensive flat panel displays with low driving voltage. © 2001 American Institute of Physics.
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85.45.Fd Field emission displays (FEDs)
85.35.Kt Nanotube devices

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

Wenquan Ma, Richard Nötzel, Achim Trampert, Manfred Ramsteiner, Haijun Zhu, Hans-Peter Schönherr, and Klaus H. Ploog

Appl. Phys. Lett. 78, 1297 (2001); http://dx.doi.org/10.1063/1.1352047 (3 pages) | Cited 33 times

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Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements. © 2001 American Institute of Physics.
Show PACS
68.65.La Quantum wires (patterned in quantum wells)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
73.21.Hb Quantum wires
78.67.Lt Quantum wires
81.07.Vb Quantum wires
68.65.Cd Superlattices
73.21.Cd Superlattices
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)
68.37.Lp Transmission electron microscopy (TEM)
78.20.Ls Magneto-optical effects
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