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10 Sep 2001

Volume 79, Issue 11, pp. 1587-1734

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Applications of photoinduced electron spin polarization at room temperature to microwave technology

Aharon Blank and Haim Levanon

Appl. Phys. Lett. 79, 1694 (2001); http://dx.doi.org/10.1063/1.1401790 (3 pages) | Cited 3 times

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We present a method for controlling the bulk permeability via spin polarization generated by light excitation. This process involves the magnetic interaction of photoexcited triplets with stable radicals in liquid solution. The resulting non-Boltzmann spin population of the stable radical is reflected by a significant change in the permeability of the chemical system. We demonstrate how these light-driven changes result in conspicuous changes in the reflection coefficient (amplitude and phase) of a microwave cavity in which the active chemical system is placed. This effect can lead the way to ultralow noise microwave amplifiers and low-loss microwave phase shifters, operating at room temperature with very low spin temperature (<16 K). Moreover, the nonlinear character of the phenomenon can be utilized for devices, which protect sensitive instrumentation from a strong destructive microwave pulse. © 2001 American Institute of Physics.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Temperature dependence of the charge injection in poly-dialkoxy-p-phenylene vinylene

T. van Woudenbergh, P. W. M. Blom, M. C. J. M. Vissenberg, and J. N. Huiberts

Appl. Phys. Lett. 79, 1697 (2001); http://dx.doi.org/10.1063/1.1395515 (3 pages) | Cited 53 times

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The injection of holes from a Ag electrode into poly-dialkoxy-p-phenylene vinylene is investigated by measuring the current–voltage characteristics as a function of temperature. For this model system, the hole injection is hindered by a contact energy barrier of about 1.0 eV. The observed temperature dependence of the injection-limited current does not agree with the predictions of classical injection models. A recent model, in which the spread in the charge transporting site energy due to disorder is taken into account, consistently describes the measured field and temperature dependence of the injection process. © 2001 American Institute of Physics.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Le Polymers; organic compounds (including organic semiconductors)

Polymeric micromechanical components with tunable stiffness

E. Manias, J. Chen, N. Fang, and X. Zhang

Appl. Phys. Lett. 79, 1700 (2001); http://dx.doi.org/10.1063/1.1400084 (3 pages) | Cited 17 times

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We present a microstereolithographic technique that enables the manufacturing of polymeric components for microelectromechanical systems. Model microstructures were fabricated in the form of end-supported microbeams (10 μm in diameter), in order to characterize the mechanical properties of the produced structures at the micron scale. The flexural modulus of these microbeams was measured by atomic force microscopy, using cantilevers with attached metal spheres, and employed in a three-point bending geometry. Postfabrication treatment of the microstructures allows for the tailoring of their stiffness. © 2001 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Nd Micro- and nanolithography

Approach to study the noise properties in nanoscale electronic devices

Xavier Oriols, Ferran Martín, and Jordi Suñé

Appl. Phys. Lett. 79, 1703 (2001); http://dx.doi.org/10.1063/1.1402651 (3 pages) | Cited 8 times

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An approach to study the noise characteristics in mesoscopic devices is presented. It extends, via quantum trajectories, the classical particle Monte Carlo techniques to devices where quantum nonlocal effects are important. As a numerical example, the fluctuations of the electron current through single-tunnel barriers are compared with the standard Landauer–Buttiker results, showing an excellent agreement. © 2001 American Institute of Physics.
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72.70.+m Noise processes and phenomena
73.50.Td Noise processes and phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.23.Hk Coulomb blockade; single-electron tunneling
73.63.-b Electronic transport in nanoscale materials and structures
85.35.-p Nanoelectronic devices
02.70.Ss Quantum Monte Carlo methods
02.70.Tt Justifications or modifications of Monte Carlo methods
02.70.Uu Applications of Monte Carlo methods
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
03.65.-w Quantum mechanics

Note on the thermal stresses in passivated metal interconnects

P. Sharma, H. Ardebili, and J. Loman

Appl. Phys. Lett. 79, 1706 (2001); http://dx.doi.org/10.1063/1.1404124 (3 pages) | Cited 3 times

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An analytical model to compute thermal stresses in passivated metal interconnects is proposed in this article. Typical aspect ratio of passivated metal interconnects is 1 or less (frequently between 0.5 and 1). Previous Eshelby-based analytical model by Niwa et al. [J. Appl. Phys. 68, 328 (1990)] is not very accurate as it fails to take into account the proximity of the interconnect to the free surface of the passivation. A recently proposed model by Wikström et al. [J. Appl. Phys. 86, 6088 (1999)] precisely does not work when the aspect ratio < 1. The analytical model proposed in this letter can predict stresses (average and spatial variations) in passivated metal interconnects with superior accuracy. The effect of free surface of passivation is fully taken into account and comparisons with previous works are presented. © 2001 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
68.60.Bs Mechanical and acoustical properties
81.65.Rv Passivation
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