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10 Sep 2001

Volume 79, Issue 11, pp. 1587-1734

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Effect of annealing atmosphere on domain structures and electromechanical properties of Pb(Zn1/3Nb2/3)O3-based ceramics

Huiqing Fan, Gun-Tae Park, Jong-Jin Choi, and Hyoun-Ee Kim

Appl. Phys. Lett. 79, 1658 (2001); http://dx.doi.org/10.1063/1.1402653 (3 pages) | Cited 18 times

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Annealing atmosphere effects on domain structures and electrical properties of Pb[(Zn1/3Nb2/3)0.5(Zr0.47Ti0.53)0.5]O3 (PZN–PZT) ferroelectric materials were investigated. The PZN–PZT specimens were annealed in argon, air, oxygen, and PbZrO3 atmospheres after being sintered at 1100 °C in air. The as-sintered specimens were composed of large plate-like domains. When the specimen was annealed in flowing oxygen atmosphere for 8 h at 960 °C, the domains were refined into fine twin-like domains; whereas when the specimen was annealed in argon atmosphere, the domains were modified into needle-like structures. These modifications to the domain structures have a strong effect on the electromechanical properties of this material. The formation and redistribution of lead and oxygen vacancies during thermal annealing were responsible for those variations in domain structures and electrical properties. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
77.65.-j Piezoelectricity and electromechanical effects
61.72.Cc Kinetics of defect formation and annealing

Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device

Tingkai Li, Sheng Teng Hsu, Bruce Ulrich, Hong Ying, Lisa Stecker, Dave Evans, Yoshi Ono, Jer-shen Maa, and J. J. Lee

Appl. Phys. Lett. 79, 1661 (2001); http://dx.doi.org/10.1063/1.1401092 (3 pages) | Cited 11 times

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A Pb5Ge3O11 metal–ferroelectric–metal–oxide–silicon memory transistor has been fabricated. The device showed a memory window of about 2 V. The memory window was almost saturated at the operation voltage of 2 V. The “off” state drain current (ID) at VD of 0.1 V and VG of 0.5 V is about 1×10−8 A. The “on” state drain current (ID) at VD of 0.1 V and VG of 0.5 V is about 1×10−6 A, which is 100 times high than that of off state. © 2001 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
85.30.Tv Field effect devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films

Spectroscopic ellipsometry study of SrBi2Ta2O9 ferroelectric thin films

Jae Ho Bahng, Mierie Lee, H. L. Park, Ill Won Kim, Jung Hyun Jeong, and Kwang Joo Kim

Appl. Phys. Lett. 79, 1664 (2001); http://dx.doi.org/10.1063/1.1402654 (3 pages) | Cited 20 times

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Optical properties of SrBi2Ta2O9 (SBT) ferroelectric thin films were investigated by spectroscopic ellipsometry at room temperature in the 1.5–5.5 eV spectral range. The films were grown on platinized silicon (Pt/Ti/SiO2/Si) with a Bi/Sr ratio (x) range from 1.2 to 2.8 by pulsed-laser deposition. The measured pseudodielectric functions of the samples indicate the band-gap energy of SBT shifts to lower energies as x increases. The optical constants and band-gap energies of the SBT films were determined through multilayer analyses on their pseudodielectric functions. The band-gap energy of SBT is found to shift to lower energies quite linearly with x. The band-gap energy at stoichiometric composition (x = 2) is estimated to be 4.1 eV. © 2001 American Institute of Physics.
Show PACS
78.66.Nk Insulators
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
77.22.Ch Permittivity (dielectric function)
71.20.Ps Other inorganic compounds
61.66.Bi Elemental solids
61.66.Dk Alloys
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