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10 Sep 2001

Volume 79, Issue 11, pp. 1587-1734

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Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN

Yoshitaka Nakano and Tetsu Kachi

Appl. Phys. Lett. 79, 1631 (2001); http://dx.doi.org/10.1063/1.1401779 (3 pages) | Cited 10 times

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The current deep-level transient spectroscopy (I-DLTS) technique was used to investigate acceptor levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy. For activation of the Mg dopants, rapid thermal annealing was performed with a SiO2 encapsulation layer at 850 °C in N2. I-DLTS measurements on the Schottky diode fabricated revealed a discrete deep level located ∼112 meV above the valence band, corresponding to the energy level measured by conventional thermal admittance spectroscopy. This energy level is also in good agreement with the frequency dependence of the capacitance in view of the characteristic frequency. Therefore, this energy level can most probably be attributed to the Mg acceptor state itself. © 2001 American Institute of Physics.
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71.55.Eq III-V semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors

High-temperature electron transport properties in AlGaN/GaN heterostructures

Narihiko Maeda, Kotaro Tsubaki, Tadashi Saitoh, and Naoki Kobayashi

Appl. Phys. Lett. 79, 1634 (2001); http://dx.doi.org/10.1063/1.1400779 (3 pages) | Cited 38 times

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Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400 °C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has been shown to decrease with increasing the temperature, with the lower decrease ratio at higher temperatures, and moreover, shown to be less dependent on the 2DEG density at higher temperatures. These features well agree with those of the longitudinal optical phonon-limited mobility theoretically predicted, although the effect of alloy and interface scattering should further be examined and analyzed. The observed 2DEG mobilities at 400 °C were as high as from 100 to 120 cm2/V s, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. Moreover, Si-doped Al0.15Ga0.85N single layer has been shown to exhibit a relatively high bulk mobility of 50 cm2/V s at 400 °C, suggesting that AlGaN is attractive as the channel material when higher-voltage and higher-temperature device operation is required. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
72.80.Ey III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Fr Low-field transport and mobility; piezoresistance
71.38.-k Polarons and electron-phonon interactions

Coexistence behavior of the CuPtB-type and the CuAu–I-type ordered structures in highly strained CdxZn1−xTe/GaAs heterostructures

H. S. Lee, J. Y. Lee, T. W. Kim, D. U. Lee, D. C. Choo, and H. L. Park

Appl. Phys. Lett. 79, 1637 (2001); http://dx.doi.org/10.1063/1.1398617 (3 pages) | Cited 5 times

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Ordered structures in highly strained CdxZn1−xTe/GaAs heterostructures epitaxial layers grown on (001)GaAs substrates were investigated by using selected area electron diffraction pattern (SADP) and cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements. The SADP results showed two sets of (1/2 1/2 1/2) superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding HRTEM images indicated a doublet periodicity in the contrast of the {111} lattice planes. Two structures, one corresponding to the CuPtB-type ordering for each direction of the doublet periodicity on the {111} lattice planes along the [110] axis and the other corresponding to superstructure spots related to the CuAu–I type ordering were observed in the SADP. The doublet periodicity of 200 lattice fringes, associated with the CuAu–I-type ordered structure was also observed in the HRTEM image, and many antiphase boundaries were observed in ordered regions. The formation of the two ordered structures in the CdxZn1−xTe epilayers might originate from the minimization of the relaxation energy due to the high strain effect resulting from the large lattice mismatch between the CdxZn1−xTe epilayer and the GaAs substrate. These results provide important information on the microstructural properties for improving the efficiencies of CdxZn1−xTe-based optoelectronic devices operating in the blue-green spectral region. © 2001 American Institute of Physics.
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68.35.Ct Interface structure and roughness
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)

Opacity of KCl single crystal shocked above the transition pressure

Eugene Zaretsky

Appl. Phys. Lett. 79, 1640 (2001); http://dx.doi.org/10.1063/1.1398606 (3 pages) | Cited 1 time

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Strong absorption of light by shock-transformed KCl (potassium chloride) single crystal has been used for measurement of electrical conductivity of its high-pressure B2 phase. The obtained conductivity values allow the determination of the width W of the gap between the valence and the conduction bands and its dependence W = W0(1−bε) on the compressive strain ε. The values of the gap width W0 = 0.49±0.06 eV and of the parameter b = 1.4±0.4 lead to the conclusion that KCl in its high-pressure modification is a semiconductor. © 2001 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors
62.50.-p High-pressure effects in solids and liquids
71.20.Nr Semiconductor compounds
64.70.K- Solid-solid transitions

Trends in bonding configuration at SiC/III–V semiconductor interfaces

Jin-Cheng Zheng, Hui-Qiong Wang, A. T. S. Wee, and C. H. A. Huan

Appl. Phys. Lett. 79, 1643 (2001); http://dx.doi.org/10.1063/1.1402162 (3 pages) | Cited 3 times

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The structural and electronic properties of interfaces between β-SiC and III–V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si–V and C–III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, and InSb, and Si–III and C–V (model B) for BP, BAs, BSb, AlSb, and GaSb. The relationship between the formation energy difference and lattice constant difference, as well as the charge distribution, for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III–V semiconductors, electrostatic effect, charge distribution, and band-structure component. © 2001 American Institute of Physics.
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68.35.Ct Interface structure and roughness
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.Np Adhesion
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