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10 Sep 2001

Volume 79, Issue 11, pp. 1587-1734

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Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates

M. Yan, Y. Koide, J. R. Babcock, P. R. Markworth, J. A. Belot, T. J. Marks, and R. P. H. Chang

Appl. Phys. Lett. 79, 1709 (2001); http://dx.doi.org/10.1063/1.1402959 (3 pages) | Cited 31 times

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Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichloro- silane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0–40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films. © 2001 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
68.55.A- Nucleation and growth
85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Quartz tuning forks as sensors for attractive-mode force microscopy under ambient conditions

G. M. King, J. S. Lamb, and G. Nunes

Appl. Phys. Lett. 79, 1712 (2001); http://dx.doi.org/10.1063/1.1402960 (3 pages) | Cited 15 times

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We present investigations of the frequency versus distance behavior of a quartz tuning-fork-based atomic force microscope. We show that if the amplitude of the motion A of the tip is large, then the apparent shape of the tip–surface interaction curve depends on A. For smaller amplitudes of oscillation (A≲3 nm), we find that the shape of the interaction curve becomes independent of A. In this low amplitude limit, a simple relation between the observed frequency shift and the underlying interaction allows quantitative determination of tip–sample forces. Tuning fork sensors open a window for dynamic-mode force microscopy in a regime where conventional microfabricated sensors are overwhelmed by long range capillary forces. © 2001 American Institute of Physics.
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07.79.Lh Atomic force microscopes

Surface photovoltage spectroscopy of semi-insulating GaAs in the 800–1100 nm range

T. K. Sharma and Shailendra Kumar

Appl. Phys. Lett. 79, 1715 (2001); http://dx.doi.org/10.1063/1.1402657 (3 pages) | Cited 6 times

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Surface photovoltage spectroscopy (SPS) studies on thick semi-insulating (SI) GaAs wafers have been done in the range 800–1100 nm using chopped light geometry. SPS peaks at 880 nm, 900 nm, and a broadband in the range 930–1080 nm have been observed. These observations are important as SPS is routinely used to study absorption-related features in InAs self-organized quantum dots grown on SI GaAs. The effect of the ambient and chopping frequencies on SPS spectra is also presented. © 2001 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
73.50.Pz Photoconduction and photovoltaic effects
81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors

Tip shape dependence of the light emission efficiency for the scanning tunneling microscope

Y. Uehara, Y. Suda, S. Ushioda, and K. Takeuchi

Appl. Phys. Lett. 79, 1718 (2001); http://dx.doi.org/10.1063/1.1404136 (3 pages) | Cited 7 times

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We have investigated the relation between the scanning-tunneling-microscope (STM) tip shape and the efficiency of STM light emission. The light intensity radiated by a current source placed in the tip-sample gap of the STM was calculated for various shapes of the tip using the finite differential time domain method. We found that the highest emission efficiency is obtained for the pyramidal tip with the flat top of 4 nm width and the apex angle of 90 °C. © 2001 American Institute of Physics.
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07.79.Cz Scanning tunneling microscopes
02.70.Bf Finite-difference methods
02.70.Hm Spectral methods

Electrochemical machining of stainless steel microelements with ultrashort voltage pulses

Viola Kirchner, Laurent Cagnon, Rolf Schuster, and Gerhard Ertl

Appl. Phys. Lett. 79, 1721 (2001); http://dx.doi.org/10.1063/1.1401783 (3 pages) | Cited 26 times

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An electrochemical pulse technique enables the fabrication of three-dimensional microelements from stainless steel. The method is based on the application of ultrashort (nanosecond) voltage pulses, whereupon electrochemical reactions are locally confined with submicrometer precision. Employing properly shaped tool electrodes enables the machining of freestanding cantilevers or microstructures directly to a metal sheet. Due to gentle removal of the material, the grain structure of the material is revealed without any chemical or mechanical modifications. This is demonstrated by measuring the vibration frequency of a cantilever, and agrees well with the value derived from the bulk material properties. © 2001 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
81.20.Wk Machining, milling

Phase transition and acoustic localization in arrays of air bubbles in water

Zhen Ye and Haoran Hsu

Appl. Phys. Lett. 79, 1724 (2001); http://dx.doi.org/10.1063/1.1403659 (3 pages) | Cited 10 times

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Wave localization is a ubiquitous phenomenon. It refers to situations that transmitted waves in scattering media are trapped in space and remain confined in the vicinity of the initial site until dissipated. Here, we report a phase transition from acoustically extended to localized states in arrays of identical air-filled bubbles in water. It is shown that the acoustic localization in such media is coincident with the complete band gap of a corresponding lattice arrangement of the air bubbles. When the localization or the band gap occurs, a collective behavior of the bubbles appears, a unique feature differentiating the localization effect from the residual absorption effect. © 2001 American Institute of Physics.
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43.25.Yw Nonlinear acoustics of bubbly liquids
47.55.D- Drops and bubbles

Formation of three-dimensional microstructures by electrochemical etching of silicon

P. Kleimann, J. Linnros, and R. Juhasz

Appl. Phys. Lett. 79, 1727 (2001); http://dx.doi.org/10.1063/1.1401792 (3 pages) | Cited 11 times

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This letter describes the promising technique of micromachining using the properties of electrochemical etching of (100)-oriented n-type silicon in a hydrofluoric acid electrolyte. The technique is based on electropolishing of a wafer except for areas where vertical structures are needed and does not require a periodic pattern. Predefined steps of a few microns depth prior to the electrochemical etching define the shape and position of the structures. The three-dimensional microstructure width can be adjusted with the etching parameters, also enabling the formation of free-standing structures. The feasibility of this technique is demonstrated by forming high aspect ratio microneedles and tubes. © 2001 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.20.Wk Machining, milling
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
82.45.Jn Surface structure, reactivity and catalysis
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.Ps Polishing, grinding, surface finishing

Scanning near-field ellipsometric microscope-imaging ellipsometry with a lateral resolution in nanometer range

P. Karageorgiev, H. Orendi, B. Stiller, and L. Brehmer

Appl. Phys. Lett. 79, 1730 (2001); http://dx.doi.org/10.1063/1.1403237 (3 pages) | Cited 10 times

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An apertureless optical near-field scanning microscope system has been created by combining a commercially available atomic force microscope and an ellipsometer without any prior changes in design of the respective devices. In preliminary experiments, an optical resolution of about 20 nm (λ/32) has been achieved using the combined microscope. The intensity of the measured optical signal has been found to be a periodic function of the thickness of the sample. Moreover, the period of this function is dependent upon the local optical properties of the sample material. © 2001 American Institute of Physics.
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07.60.Fs Polarimeters and ellipsometers
07.79.Fc Near-field scanning optical microscopes
68.37.Uv Near-field scanning microscopy and spectroscopy
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