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10 Sep 2001

Volume 79, Issue 11, pp. 1587-1734

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Thermal energy consideration in micromagnetic simulation for laminated antiferromagnetically coupled recording media

C. H. Hee, J. P. Wang, S. N. Piramanayagam, and T. C. Chong

Appl. Phys. Lett. 79, 1646 (2001); http://dx.doi.org/10.1063/1.1402658 (3 pages) | Cited 7 times

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Contribution of thermal energy, has been included in the micromagnetic simulation of laminated antiferromagnetically coupled (LAC) media. The antiferromagnetic coupling constant, J, required to obtain Mrt reduction in the existing simulation studies (T = 0 K) of LAC media is much higher than the experimental values. In this letter, we describe some experimental results, which point out that the contribution of thermal energy in Mrt reduction is significant. Consequently, we find that the values of J and the reversal fields are comparable to the experimental results, when thermal energy (T = 300 K) is included in the simulation. © 2001 American Institute of Physics.
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75.50.Ss Magnetic recording materials
75.60.Jk Magnetization reversal mechanisms
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Transport behavior and critical current densities in MgB2 wires

A. K. Pradhan, Y. Feng, Y. Zhao, N. Koshizuka, L. Zhou, P. X. Zhang, X. H. Liu, P. Ji, S. J. Du, and C. F. Liu

Appl. Phys. Lett. 79, 1649 (2001); http://dx.doi.org/10.1063/1.1403278 (3 pages) | Cited 12 times

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We report on the transport and magnetization properties of MgB2 wires fabricated by a powder-in-tube (PIT) technique. Temperature and magnetic-field-dependent resistivity displays a high conductivity and upper critical field Hc2 generally observed in dense samples. The electronic mass anisotropy γ ≈ 1.3±0.15 predicts some texturing in the wire. Our data on transition temperature TC, Hc2, and both magnetic and transport critical current density Jc indicate that MgB2 can be manufactured in a wire form using a PIT technique and required engineering Jc can be achieved on further optimization. © 2001 American Institute of Physics.
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74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.F- Transport properties

Spin engineering in ultrathin Co0.35Pd0.65 alloy films

Sang-Koog Kim, Jeong-Won Lee, Jong-Ryul Jeong, Jonggeol Kim, and Sung-Chul Shin

Appl. Phys. Lett. 79, 1652 (2001); http://dx.doi.org/10.1063/1.1402153 (3 pages) | Cited 11 times

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The easy axis of magnetization in CoxPd1−x alloy films with x = 0.35 is controllably engineered by varying the thickness, tPd, of the Pd overlayers directly deposited on the alloy layers. In a Pd(50 Å)/CoPd (20 Å)/Pd (tPd) sample with a 10-Å-height step-wedge Pd layer, the easy axis smoothly changes from in-plane orientation (tPd = 0Å) through canted out of plane (0<tPd<30 Å) to perpendicular (30 ⩽ tPd⩽60 Å). We also demonstrate that the spin switching is controllably reversible between in-plane and perpendicular orientations when the individual constituent layers of CoPd and Pd are alternately deposited. Smoothly continuous spin reorientation in a Pd (50 Å)/CoPd (30 Å)/Pd (tPd) film with increasing tPd in a broad range of 0–150 Å convincingly evidences the magnetoelastic anisotropy origin for the observed spin switching. © 2001 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy

Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)

M. Bowen, V. Cros, F. Petroff, A. Fert, C. Martínez Boubeta, J. L. Costa-Krämer, J. V. Anguita, A. Cebollada, F. Briones, J. M. de Teresa, L. Morellón, M. R. Ibarra, F. Güell, F. Peiró, and A. Cornet

Appl. Phys. Lett. 79, 1655 (2001); http://dx.doi.org/10.1063/1.1404125 (3 pages) | Cited 99 times

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We present tunneling experiments on Fe(001)/MgO(20 Å)/FeCo(001) single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on (001)-oriented Fe/amorphous-Al2O3/FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface—Fe(001) in this case—but depends on the actual electronic structure of the entire electrode/barrier system. © 2001 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.40.Gk Tunneling
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