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10 Sep 2001

Volume 79, Issue 11, pp. 1587-1734

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Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy

X. Q. Shen, M. Shimizu, H. Okumura, and F. Sasaki

Appl. Phys. Lett. 79, 1599 (2001); http://dx.doi.org/10.1063/1.1402650 (3 pages) | Cited 3 times

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Time-resolved photoluminescence measurements at 5 K were performed to study the optical properties of InGaN/GaN multiple-quantum wells (MQWs) grown by plasma-assisted molecular-beam epitaxy (rf-MBE). Stimulated-emission (SE) phenomena by optical pumping were observed under the high-excitation density from the InGaN/GaN MQW samples with the In composition varying from 0.04 to 0.16. It was found that the threshold density for SE phenomena strongly depended on the In composition, where the lowest threshold density was 69 μJ/cm2 from our samples. Our results show a potential of rf-MBE technique for the future optical device applications. © 2001 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.45.+h Stimulated emission
78.67.De Quantum wells

Thermal expansion and elastic properties of InN

Kai Wang and Robert R. Reeber

Appl. Phys. Lett. 79, 1602 (2001); http://dx.doi.org/10.1063/1.1400082 (3 pages) | Cited 24 times

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The thermal expansion coefficients of wurtzite structure InN are evaluated within the constraints of a basic model and predicted for an extended temperature range. Together with the elastic constants provided earlier, this information gives a basis for optimizing thin-film growth conditions and thereby reducing the residual stresses in group-III-nitride thin-film devices. © 2001 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.60.Wm Other nonelectronic physical properties
65.40.De Thermal expansion; thermomechanical effects
62.20.D- Elasticity
68.55.A- Nucleation and growth

Vitrification and determination of the crystallization time scales of the bulk-metallic-glass-forming liquid Zr58.5Nb2.8Cu15.6Ni12.8Al10.3

C. C. Hays, J. Schroers, W. L. Johnson, T. J. Rathz, R. W. Hyers, J. R. Rogers, and M. B. Robinson

Appl. Phys. Lett. 79, 1605 (2001); http://dx.doi.org/10.1063/1.1398605 (3 pages) | Cited 23 times

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The crystallization kinetics of Zr58.5Nb2.8Cu15.6Ni12.8Al10.3 were studied in an electrostatic levitation (ESL) apparatus. The measured critical cooling rate is 1.75 K/s. Zr58.5Nb2.8Cu15.6Ni12.8Al10.3 is the first bulk-metallic-glass-forming liquid that does not contain beryllium to be vitrified by purely radiative cooling in the ESL. Furthermore, the sluggish crystallization kinetics enable the determination of the time-temperature-transformation (TTT) diagram between the liquidus and the glass transition temperatures. The shortest time to reach crystallization in an isothermal experiment; i.e., the nose of the TTT diagram is 32 s. The nose of the TTT diagram is at 900 K and positioned about 200 K below the liquidus temperature. © 2001 American Institute of Physics.
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81.05.Kf Glasses (including metallic glasses)
64.70.D- Solid-liquid transitions
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
81.30.Bx Phase diagrams of metals, alloys, and oxides
61.43.Fs Glasses

Atomically accurate Si grating with 5.73 nm period

A. Kirakosian, R. Bennewitz, J. N. Crain, Th. Fauster, J.-L. Lin, D. Y. Petrovykh, and F. J. Himpsel

Appl. Phys. Lett. 79, 1608 (2001); http://dx.doi.org/10.1063/1.1401788 (3 pages) | Cited 67 times

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A vicinal surface of silicon is found that exhibits an atomically accurate step pattern with a period of 5.73 nm, corresponding to 17 atomic rows per (111) terrace. It can be viewed as reconstructed Si(557) surface, where a triple step is combined with a single Si(111)7×7 unit. The driving forces for establishing regular step patterns are discussed. © 2001 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing

Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy

U. Zeimer, F. Bugge, S. Gramlich, V. Smirnitski, M. Weyers, G. Tränkle, J. Grenzer, U. Pietsch, G. Cassabois, V. Emiliani, and Ch. Lienau

Appl. Phys. Lett. 79, 1611 (2001); http://dx.doi.org/10.1063/1.1402638 (3 pages) | Cited 4 times

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A strain-induced lateral variation of the band edges of a 10-nm-thick In0.16Ga0.84As quantum well embedded in GaAs is achieved by patterning of a 100-nm-thick compressively strained In0.52Ga0.48P stressor layer. The strain modulation results in a splitting of the 10 K far-field photoluminescence (PL) spectra into two emission peaks. Spectrally resolved two-dimensional near-field PL images establish a clear spatial and spectral separation of the two far-field PL peaks, indicating a lateral carrier confinement with a confinement energy of about 10 meV. Finite-element calculations of the strain distribution are used to determine the lateral band-edge shifts and are well in agreement with the experimental findings. © 2001 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
68.65.Fg Quantum wells
73.21.Fg Quantum wells

Incorporation kinetics of indium in indium gallium nitride at low temperature

D. F. Storm, C. Adelmann, and B. Daudin

Appl. Phys. Lett. 79, 1614 (2001); http://dx.doi.org/10.1063/1.1400081 (2 pages) | Cited 3 times

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Recently, a phenomenological model of the incorporation kinetics of indium in indium gallium nitride was proposed based on published data from InGaN growth at relatively high fluxes and high substrate temperature, TS = 650 °C. We present data from growths at much lower fluxes and at a significantly lower substrate temperature, which are also very well described by this model, as well as data for which the model appears less satisfactory. The nature of the indium self-blocking mechanism and the dependence of the model’s fitting parameters on the substrate temperature are discussed. © 2001 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification

Self-assembled AlInGaN quaternary superlattice structures

N. A. El-Masry, M. K. Behbehani, S. F. LeBoeuf, M. E. Aumer, J. C. Roberts, and S. M. Bedair

Appl. Phys. Lett. 79, 1616 (2001); http://dx.doi.org/10.1063/1.1400763 (3 pages) | Cited 7 times

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When an AlInGaN quaternary alloy is grown by metalorganic chemical-vapor deposition under certain growth conditions, a self-assembled superlattice structure is obtained. The superlattice structure is made of quaternary layers with different AIN and InN compositions. Transmission electron microscopy data show that the superlattice periodicity is regular with an individual layer thickness that depends on the growth conditions. Secondary ion mass spectrometry measurements show that the layers’ composition alternate between high-AIN and InN content and low-AlN and-InN content, while the in-plane lattice constant remains constant for both layers. A model is presented as a preliminary effort to explain these results. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
68.65.Cd Superlattices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
81.16.Dn Self-assembly

Reduction in crystallographic tilting of lateral epitaxial overgrown GaN by removal of oxide mask

Min Hong Kim, Yoonho Choi, Jaehyung Yi, Min Yang, Jina Jeon, Sungwon Khym, and Shi-Jong Leem

Appl. Phys. Lett. 79, 1619 (2001); http://dx.doi.org/10.1063/1.1403236 (3 pages) | Cited 8 times

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The lateral overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition. SiO2 mask was removed just before coalescence and a subsequent lateral overgrowth was carried out to complete the fabrication of a SiO2-removed lateral epitaxial overgrown (LEO) GaN layer. The crystallographic tilting of (0002) plane, that was apparent in our standard LEO GaN layers, was absent in SiO2-removed LEO layer and x-ray diffraction measurement indicated a superior crystallinity for the SiO2-removed LEO layer. These results are attributed to the elimination of the interface between oxide mask and laterally grown GaN layer. The reduced crystallographic tilting in SiO2-removed LEO GaN layer also enhanced the quality of the coalesced fronts, as determined from cathodoluminescence images. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors

Reduction of nonradiative recombination centers in V-grooved AlGaAs/GaAs quantum wires grown using tertiarybutylarsine

Xing-Quan Liu, Xue-Lun Wang, and Mutsuo Ogura

Appl. Phys. Lett. 79, 1622 (2001); http://dx.doi.org/10.1063/1.1403235 (3 pages) | Cited 9 times

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We report our comparative study on the luminescence recombination processes of V-grooved AlGaAs/GaAs quantum wires (QWRs) grown using tertiarybutylarsine (TBAs) and AsH3 as arsenic sources. Constant integrated photoluminescence (PL) intensity up to 120 K, as well as radiative efficiency of about 3000 times higher at room temperature, were observed for the TBAs sample compared with the AsH3 sample. Time-resolved PL measurements show a maximum decay time at temperature of as high as 240 K for the TBAs sample, which is about 100 K higher than that of similar samples grown using AsH3 as the arsenic source. These results suggest a dramatic reduction of nonradiative centers in QWR regions grown using TBAs as the arsenic source. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.67.Lt Quantum wires
73.21.Hb Quantum wires
71.55.Eq III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Quantitative in situ nanoindentation in an electron microscope

A. M. Minor, J. W. Morris, and E. A. Stach

Appl. Phys. Lett. 79, 1625 (2001); http://dx.doi.org/10.1063/1.1400768 (3 pages) | Cited 55 times

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We report the development of a method for quantitative, in situ nanoindentation in an electron microscope and its application to study the onset of deformation during the nanoindentation of aluminum films. The force–displacement curve developed shows the characteristic “staircase” instability at the onset of plastic deformation. This instability corresponds to the first appearance of dislocations in a previously defect-free grain. Plastic deformation proceeds through the formation and propagation of prismatic loops punched into the material, and half loops that emanate from the sample surface. These results represent the first real time observations of the discrete microstructural events that occur during nanoindentation. © 2001 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
62.20.M- Structural failure of materials
62.20.Qp Friction, tribology, and hardness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
61.72.Lk Linear defects: dislocations, disclinations

Analytic solution of stress distribution under a thin film edge in substrates

S. P. Wong, H. J. Peng, and Shounan Zhao

Appl. Phys. Lett. 79, 1628 (2001); http://dx.doi.org/10.1063/1.1404130 (3 pages) | Cited 6 times

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We have obtained an analytic solution for the stress distribution under a thin film edge in isotropic substrates of finite thickness and of infinite extent in the other two directions. Far from the film edge on the side without the film, all stress components are zero and far from the film edge under the film, the stress distribution is in accordance with that given by the bimetallic strip theory. To demonstrate the validity of this solution, the experimental infrared photoelastic stress fringe pattern obtained by a dark-field plane polariscope in a Si substrate under an oxide film edge was successfully reproduced using this solution. © 2001 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.20.D- Elasticity
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
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