APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 Sep 2001

Volume 79, Issue 12, pp. 1745-1922

Return to All Sections
back to top
RSS Feeds

Ohmic contact formation mechanism of Ni on n-type 4H–SiC

Sang Youn Han, Ki Hong Kim, Jong Kyu Kim, Ho Won Jang, Kwang Ho Lee, Nam-Kyun Kim, Eun Dong Kim, and Jong-Lam Lee

Appl. Phys. Lett. 79, 1816 (2001); http://dx.doi.org/10.1063/1.1404998 (3 pages) | Cited 34 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 °C, but Ni2Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 °C. The higher work function of Ni2Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 °C support that a number of carbon vacancies were produced below the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons. © 2001 American Institute of Physics.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing

Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films

Paul Ch. van der Wilt, B. D. van Dijk, G. J. Bertens, R. Ishihara, and C. I. M. Beenakker

Appl. Phys. Lett. 79, 1819 (2001); http://dx.doi.org/10.1063/1.1402641 (3 pages) | Cited 35 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-crystal thin-film transistors on nonrefractory materials such as glass can be realized if monocrystalline islands of sufficient sizes can be grown at a predetermined position. By artificially controlling the super-lateral growth phenomenon observed in excimer-laser crystallization, this could be achieved. In this letter, we present such a method in which the silicon filling of a very small indentation fabricated in the substrate will act as a seed for lateral growth of large grains. When the melt is deep in these indentations, lateral growth is preceded by a vertical growth phase during which grains become occluded, so that a high yield of monocrystalline islands is obtained. © 2001 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
85.30.Tv Field effect devices

Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

Ho Won Jang, Ki Hong Kim, Jong Kyu Kim, Soon-Won Hwang, Jung Ja Yang, Kang Jae Lee, Sung-Jin Son, and Jong-Lam Lee

Appl. Phys. Lett. 79, 1822 (2001); http://dx.doi.org/10.1063/1.1403660 (3 pages) | Cited 19 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a low-resistance thermally stable ohmic contact on p-type GaN using a promising contact scheme of Pd/Ni. Specific contact resistance as low as 5.7×10−5 Ω cm2 was obtained from the Pd (30 Å)/Ni (70 Å) contact annealed at 500 °C under an oxidizing ambient. NiO that formed at the surface prevented Pd atoms from outdiffusing, promoting the formation of Pd gallides, Ga2Pd5 and Ga5Pd. This reaction produces Ga vacancies below the contact, leading to enhancement of the thermal stability as well as reduction of the contact resistivity. © 2001 American Institute of Physics.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
85.40.Ls Metallization, contacts, interconnects; device isolation
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

Haruhiko Yoshida, Hiroshi Sasakura, Tomoyuki Yabuuchi, Toshinori Takami, Takayuki Uchihashi, and Seigo Kishino

Appl. Phys. Lett. 79, 1825 (2001); http://dx.doi.org/10.1063/1.1399311 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A scanning charge pumping method using a back channel is proposed for the characterization of interface traps in a silicon-on-insulator (SOI) wafer. In this method, a contactless gate electrode is used instead of the permanent gate electrode of normal metal–oxide–semiconductor transistors, allowing the interface trap density of SOI wafers to be mapped. A preliminary study is performed using a sample device with many permanent gate electrodes fabricated on an oxidized SOI wafer. The results demonstrate that the back-channel-type scanning charge pumping method is effective in characterizing interface trap density and is potentially applicable to SOI wafer inspection. © 2001 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Single electron tunneling detected by electrostatic force

Levente J. Klein and Clayton C. Williams

Appl. Phys. Lett. 79, 1828 (2001); http://dx.doi.org/10.1063/1.1403256 (3 pages) | Cited 20 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single electron tunneling events between a specially fabricated scanning probe and a conducting surface are demonstrated. The probe is an oxidized silicon atomic force microscope tip with an electrically isolated metallic dot at its apex. A voltage applied to the silicon tip produces an electrostatic force on the probe, which depends upon the charge on the metallic dot. Single electron tunneling events are observed in both the electrostatic force amplitude and phase signal. Electrostatic modeling of the probe response to single tunneling events is in good agreement with measured results. © 2001 American Institute of Physics.
Show PACS
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Gv Single electron devices

Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Jing Wang, Yutao Ma, Lilin Tian, and Zhijian Li

Appl. Phys. Lett. 79, 1831 (2001); http://dx.doi.org/10.1063/1.1403658 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using a modified Airy function (MAF) to solve the Schrödinger equation in the whole metal–oxide–semiconductor structure, a fully quantum-mechanical model of direct tunneling current from an inverted p-Si substrate through ultrathin oxides is presented. The effects of tunneling on the electrostatic potential and the distribution of electrons are also included when self-consistently solving the Schrödinger and Poisson equations in silicon. Due to the semianalytical nature of the MAF method, the model has high efficiency. Model results are compared with experimental data and show excellent agreement. Moreover, an approximately linear relationship between the logarithm of the direct tunneling current and oxide thickness is found out. © 2001 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
73.20.-r Electron states at surfaces and interfaces
73.40.Cg Contact resistance, contact potential

Fermi level dependence of hydrogen diffusivity in GaN

A. Y. Polyakov, N. B. Smirnov, S. J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V. A. Dmitriev, A. E. Nikolaev, A. S. Usikov, and I. P. Nikitina

Appl. Phys. Lett. 79, 1834 (2001); http://dx.doi.org/10.1063/1.1404398 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Hydrogen diffusion studies were performed in GaN samples with different Fermi level positions. It is shown that, at 350 °C, hydrogen diffusion is quite fast in heavily Mg doped p-type material with the Fermi level close to Ev+0.15 eV, considerably slower in high-resistivity p-GaN(Zn) with the Fermi level Ev+0.9 eV, while for conducting and semi-insulating n-GaN samples with the Fermi level in the upper half of the band gap no measurable hydrogen diffusion could be detected. For these latter samples it is shown that higher diffusion temperature of 500 °C and longer times (50 h) are necessary to incorporate hydrogen to appreciable depth. These findings are in line with previously published theoretical predictions of the dependence of hydrogen interstitials formation in GaN on the Fermi level position. © 2001 American Institute of Physics.
Show PACS
66.30.J- Diffusion of impurities
71.55.Eq III-V semiconductors
71.20.Nr Semiconductor compounds
61.72.J- Point defects and defect clusters
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close