Carrier localization and the origin of luminescence in cubic InGaN alloys

Kent, P. R. C.; Zunger, Alex

doi:doi:10.1063/1.1405003

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Minority additive distributions in a ceramic metal-halide arc lamp using high-energy x-ray induced fluorescence

X-ray induced fluorescence is used to measure the elemental densities of minority additives in a metal-halide arc contained inside a translucent ceramic envelope. A monochromatic x-ray beam from the Sector 1 Insertion Device beamline at the Advanced Photon Source is used to excite K-shell x-ray fluorescence in the constituents of a ceramic metal-halide arc lamp dosed with DyI3 and CsI. Fluorescence and scattered photons are collected by a cryogenic energy-resolving Ge detector. The high signal-t...

Effects of interdiffusion on the band alignment of GeSi dots

The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by t...

The electronic structure and optical properties of cubic (nonpiezoelectric) InGaN are investigated using large scale atomistic empirical pseudopotential calculations. We find that (i) strong hole localization exists even in the homogeneous random alloy, with a preferential localization along the [1,1,0] In–N–In–N–In chains, (ii) even modest sized (<50 Å) indium rich quantum dots provide substantial quantum confinement and readily reduce emission energies relative to the random alloy by 200–300 meV, depending on size and composition, consistent with current photoluminescence, microscopy, and Raman data. The dual effects of alloy hole localization and localization of electrons and hole at intrinsic quantum dots are responsible for the emission characteristics of current grown cubic InGaN alloys. © 2001 American Institute of Physics.