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Applied Physics Letters / Volume 79 / Issue 13 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 79, 1980 (2001); http://dx.doi.org/10.1063/1.1405152 (3 pages)

Effects of interdiffusion on the band alignment of GeSi dots

J. Wan1, Y. H. Luo1, Z. M. Jiang1, G. Jin1, J. L. Liu1, Kang L. Wang1, X. Z. Liao2, and J. Zou2

1Device Research Laboratory, Electrical Engineering Department, University of California at Los Angeles, Los Angeles, California 90095-1594
2Australian Key Center for Microscopy and Microanalysis, The University of Sydney, Sydney NSW 2006, Australia

(Received 1 May 2001; accepted 19 July 2001)

The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements. © 2001 American Institute of Physics.

© 2001 American Institute of Physics

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KEYWORDS and PACS

Keywords

photoluminescence, chemical interdiffusion, semiconductor materials, semiconductor quantum dots, Ge-Si alloys, valence bands, annealing, interface states

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1405152

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Wan, G. L. Jin, Z. M. Jiang, Y. H. Luo, J. L. Liu, and K. L. Wang, Appl. Phys. Lett. 78, 1763 (2001)APPLAB000078000012001763000001.

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