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24 Sep 2001

Volume 79, Issue 13, pp. 1933-2115

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Erratum: “Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers” [Appl. Phys. Lett. 78, 3166 (2001)]

S. N. G. Chu, N. Chand, W. B. Joyce, P. Parayanthal, and D. P. Wilt

Appl. Phys. Lett. 79, 2115 (2001); http://dx.doi.org/10.1063/1.1401195 (1 page)

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Abstract Unavailable
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness
68.35.Gy Mechanical properties; surface strains
99.10.Cd Errata
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