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24 Sep 2001

Volume 79, Issue 13, pp. 1933-2115

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Single-crystal aluminum nitride nanomechanical resonators

A. N. Cleland, M. Pophristic, and I. Ferguson

Appl. Phys. Lett. 79, 2070 (2001); http://dx.doi.org/10.1063/1.1396633 (3 pages) | Cited 63 times

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Aluminum nitride is a light, stiff, piezoelectrically active material that can be epitaxially grown on single-crystal Si. AlN is beginning to play a role in the integration of semiconducting electronic and surface acoustic wave devices, and may prove useful for the integration of other types of mechanical devices as well. We describe the growth and subsequent electron-beam patterning and etching of epitaxial AlN-on-silicon films into nanomechanical flexural resonators. We have measured resonators with fundamental mechanical resonance frequencies above 80 MHz, and quality factors in excess of 20 000. © 2001 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.65.Cf Surface cleaning, etching, patterning
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Removable template route to metallic nanowires and nanogaps

R. Šordan, M. Burghard, and K. Kern

Appl. Phys. Lett. 79, 2073 (2001); http://dx.doi.org/10.1063/1.1405813 (3 pages) | Cited 24 times

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A general method for the fabrication of nanowires with a thickness of ∼6 nm and width of 15–20 nm is presented. The approach is applicable to inorganic and organic materials and is demonstrated here for metallic systems. The wires are produced by ion-beam etching of a gold–palladium thin films covered by chemically modified vanadium–pentoxide nanowires as an etching mask. The two-probe room-temperature resistance of the wires is found to range between 7.8 and 18.1 kΩ. Nanogaps with a length on the order of 1 nm were created within the nanowires by breaking via electromigration. © 2001 American Institute of Physics.
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81.16.Rf Micro- and nanoscale pattern formation
81.07.Lk Nanocontacts
73.63.Rt Nanoscale contacts
81.65.Cf Surface cleaning, etching, patterning

Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices

V. Ioannou-Sougleridis, A. G. Nassiopoulou, T. Ouisse, F. Bassani, and F. Arnaud d’Avitaya

Appl. Phys. Lett. 79, 2076 (2001); http://dx.doi.org/10.1063/1.1405004 (3 pages) | Cited 4 times

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Electroluminescence (EL) from silicon nanocrystals in Si/CaF2 superlattices grown by molecular-beam epitaxy at room temperature was investigated and compared with that obtained from silicon nanocrystals in Si/SiO2 superlattices. EL spectra exhibited current-tunability, similar to that observed in silicon nanocrystals in SiO2, which was attributed to three main effects: (a) Auger quenching of photoluminescence, which occurs when more than one electron-hole pair is present in the same nanocrystal and which quenches luminescence from relatively larger nanocrystals, (b) size-dependent carrier injection, and (c) the effect of the applied field, when this one is significantly high. In the case of Si/CaF2 superlattices, this last factor did not apply, so the two other factors are mainly at the origin of the effect. © 2001 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
73.21.Cd Superlattices
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Field emission from short and stubby vertically aligned carbon nanotubes

M. Chhowalla, C. Ducati, N. L. Rupesinghe, K. B. K. Teo, and G. A. J. Amaratunga

Appl. Phys. Lett. 79, 2079 (2001); http://dx.doi.org/10.1063/1.1406557 (3 pages) | Cited 74 times

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Electron emission from vertically aligned carbon nanotubes grown by plasma enhanced chemical vapor deposition has been measured using a parallel plate anode and a 1 μm tungsten probe. The field emission characteristics were measured as a function of the nanotube diameter, length, and areal density. It was found that less densely populated “short and stubby” nanotubes with diameters of 200 nm and heights of 0.7 μm showed the best emission characteristics with a threshold voltage of 2 V/μm and saturation emission current density of 10 mA/cm2. A triple junction between nanotube, substrate, and vacuum is proposed to explain our results.© 2001 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
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