APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Oct 2001

Volume 79, Issue 15, pp. 2309-2491

Return to All Sections
back to top
RSS Feeds

Opal-like photonic crystal with diamond lattice

F. García-Santamaría, C. López, F. Meseguer, F. López-Tejeira, J. Sánchez-Dehesa, and H. T. Miyazaki

Appl. Phys. Lett. 79, 2309 (2001); http://dx.doi.org/10.1063/1.1406560 (3 pages) | Cited 20 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A method to fabricate a diamond structure with a complete photonic bandgap in the near infrared is proposed. The procedure starts by building an opal with body-centered-cubic symmetry composed of two types (organic and inorganic) of microspheres by means of a microrobotic technique. Then, the organic particles may be selectively removed to obtain a diamond structure of inorganic particles. This method can be extended to make diamond inverse opals of silicon with full gap to midgap ratios as large as 13% for moderate filling fractions. © 2001 American Institute of Physics.
Show PACS
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.-c Methods of micro- and nanofabrication and processing
81.20.-n Methods of materials synthesis and materials processing
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
06.60.Sx Positioning and alignment; manipulating, remote handling

Group velocity and propagation losses measurement in a single-line photonic-crystal waveguide on InP membranes

X. Letartre, C. Seassal, C. Grillet, P. Rojo-Romeo, P. Viktorovitch, M. Le Vassor d’Yerville, D. Cassagne, and C. Jouanin

Appl. Phys. Lett. 79, 2312 (2001); http://dx.doi.org/10.1063/1.1405146 (3 pages) | Cited 65 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-line photonic-crystal waveguides are investigated. Photoluminescence experiments and three-dimensional calculation are performed and allow a clear identification of the guided modes. The propagation properties of the latter (group velocity, losses) are extracted from photoluminescence spectra obtained on closed waveguides which act as linear cavities. © 2001 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
42.82.Et Waveguides, couplers, and arrays
78.55.-m Photoluminescence, properties and materials

Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans

Appl. Phys. Lett. 79, 2315 (2001); http://dx.doi.org/10.1063/1.1397758 (3 pages) | Cited 56 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The transmission properties of semiconductor surfaces can be changed by surface texturing. We investigate these changes experimentally and find that an enhancement of the angle-averaged transmission by a factor of 2 can be achieved with optimum texturing parameters. This enhanced transmission provides an additional light extraction mechanism for high-efficiency surface-textured light-emitting diodes. External quantum efficiencies of 46% and 54% are demonstrated before and after encapsulation, respectively. © 2001 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.68.+m Optical properties of surfaces
78.66.Fd III-V semiconductors

Spectroscopic analysis and persistent photon-gated spectral hole burning in LiF:F2− color center crystal

V. V. Fedorov, S. B. Mirov, M. Ashenafi, and L. Xie

Appl. Phys. Lett. 79, 2318 (2001); http://dx.doi.org/10.1063/1.1406563 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Luminescence and absorption spectra of LiF crystals with F2− color centers (CCs) were studied in the 14–300 K temperature range. The Huang–Rhys factors measured from absorption and emission spectra were equal in magnitude and calculated to be 3.2 and 2.72 at 77 and 300 K, respectively. It was shown that below 40 K inhomogeneous broadening of the zero phonon line of the F2− CC prevails over homogeneous broadening. Inhomogeneous broadening of the zero phonon line was observed to vary from 5 to 15 cm−1 for different crystal preparations. Persistent spectral hole burning stable at room temperature was realized in LiF:F2− crystals. © 2001 American Institute of Physics.
Show PACS
61.72.J- Point defects and defect clusters
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials

Single sharp spot in fluorescence microscopy of two opposing lenses

C. M. Blanca, J. Bewersdorf, and S. W. Hell

Appl. Phys. Lett. 79, 2321 (2001); http://dx.doi.org/10.1063/1.1407303 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate theoretically, experimentally, and in an imaging application the possibility to generate a single predominant sharp diffraction maximum in the effective point-spread function of a fluorescence microscope that coherently uses two opposing lenses. This is achieved through binary pupil filters that preclude the origination of the unfavorable strong interference side maxima that are otherwise present in these systems. Mathematical postprocessing, which has so far been a prerequisite to gain artifact-free images, is now optional or obsolete. © 2001 American Institute of Physics.
Show PACS
07.79.-v Scanning probe microscopes and components
07.60.Pb Conventional optical microscopes

Multiwavelength laterally complex coupled distributed feedback laser arrays with monolithically integrated combiner fabricated by focused-ion-beam lithography

L. Bach, I. P. Reithmaier, A. Forchel, J. L. Gentner, and L. Goldstein

Appl. Phys. Lett. 79, 2324 (2001); http://dx.doi.org/10.1063/1.1392977 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A multiwavelength laser array with four complex coupled distributed feedback lasers was fabricated by focused-ion-beam lithography. The laser array was monolithically integrated with a combiner network to allow simultaneous operation and coupling of four wavelengths into one single-mode fiber. To reduce the fabrication complexity, focused-ion-beam technology was used to define complex coupled gratings lateral to pumped ridge waveguide sections without any further overgrowth step. A four wavelength output with 6-nm-wavelength spacing and side-mode suppression ratios of more than 35 dB were obtained with output powers up to 6 mW per channel. © 2001 American Institute of Physics.
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.81.Qb Fiber waveguides, couplers, and arrays
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Et Waveguides, couplers, and arrays

Linear optical properties of Ge nanocrystals in silica

Annette Dowd, Robert G. Elliman, and Barry Luther-Davies

Appl. Phys. Lett. 79, 2327 (2001); http://dx.doi.org/10.1063/1.1409591 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The absorption and extinction spectra of Ge nanocrystals in silica formed by ion implantation are studied using photothermal deflection and transmission spectroscopies. It is found that scattering makes a significant contribution to the extinction spectrum, damping the spectral features and resulting in a Rayleigh scattering-like ω4 dependence. In contrast, the spectra measured by photothermal deflection clearly show features such as the E1/E1+Δ1 transitions. The Tauc gap is extracted to be ∼ 0.7±0.1 eV. © 2001 American Institute of Physics.
Show PACS
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Am Elemental semiconductors and insulators
61.72.up Other materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close