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22 Oct 2001

Volume 79, Issue 17, pp. 2681-2850

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Erratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. 79, 1094 (2001)]

Wei Li, Markus Pessa, Tommy Ahlgren, and James Dekker

Appl. Phys. Lett. 79, 2850 (2001); http://dx.doi.org/10.1063/1.1413737 (1 page)

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Abstract Unavailable
Show PACS
99.10.Cd Errata
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
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