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22 Oct 2001

Volume 79, Issue 17, pp. 2681-2850

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Near-field microscopy and spectroscopy of third-harmonic generation and two-photon excitation in nonlinear organic crystals

Yuzhen Shen, Jacek Swiatkiewicz, Przemyslaw Markowicz, and Paras N. Prasad

Appl. Phys. Lett. 79, 2681 (2001); http://dx.doi.org/10.1063/1.1412433 (3 pages)

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Near-field microscopy and spectroscopy of third-harmonic generation and two-photon excitation are demonstrated on a subdiffraction-limited scale. Near-field measurements of both the intensity dependence and the spectral dependence are performed on nonlinear organic nanocrystals of 4-(N, N-diethylamino)-β-nitrostyrene. The in-plane local anisotropies of third-order susceptibilities are observed, which is revealed to be associated to two-photon allowed π–electron transition. The local spectra exhibit the crystal symmetry on a nanometric scale. © 2001 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability

Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP–InP

M. Müller, M. Kamp, A. Forchel, and J.-L. Gentner

Appl. Phys. Lett. 79, 2684 (2001); http://dx.doi.org/10.1063/1.1404397 (3 pages) | Cited 10 times

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We have investigated tunable distributed feedback (DFB) lasers based on InGaAsP quantum wells grown by molecular-beam epitaxy. Two-section tunable DFB lasers were fabricated by patterning laterally gain coupling binary superimposed gratings perpendicular to the ridge waveguide. Side mode suppression ratios of up to 42 dB have been achieved. The tuning range covers 25 nm. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors

Dynamics of the second-order nonlinearity in thermally poled silica glass

D. Faccio, V. Pruneri, and P. G. Kazansky

Appl. Phys. Lett. 79, 2687 (2001); http://dx.doi.org/10.1063/1.1394948 (3 pages) | Cited 21 times

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We study the temporal evolution of both the second-order nonlinear coefficient and of the nonlinear thickness in thermally poled silica-glass slides by using a high-resolution all-optical technique. A time delay in the nonlinearity formation is observed, followed by an increase to a maximum, and a final decrease. The thickness is shown to increase at a rate that differs significantly from that reported for the corresponding ionic charge fronts. Our measurements also show strong dependencies on sample thickness and these can be attributed to different electric fields in the depletion region. © 2001 American Institute of Physics.
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42.70.Ce Glasses, quartz
77.22.Ej Polarization and depolarization
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Surface-emitting channel drop filters using single defects in two-dimensional photonic crystal slabs

Alongkarn Chutinan, Masamitsu Mochizuki, Masahiro Imada, and Susumu Noda

Appl. Phys. Lett. 79, 2690 (2001); http://dx.doi.org/10.1063/1.1413720 (3 pages) | Cited 58 times

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We report a theoretical analysis of trapping and emission of photons by a single defect in a two-dimensional photonic crystal slab. We show that the tuning of emission wavelength is possible by selecting appropriate geometry of structure while keeping the emission efficiency maximal. The results suggest the possibility of applying it to ultra-small channel add/drop device in wavelength division multiplexed optical communications. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ci Filters, zone plates, and polarizers
42.82.Et Waveguides, couplers, and arrays

Strain-induced channel waveguiding in bulk sapphire substrates

Mingjiao Liu and Hong Koo Kim

Appl. Phys. Lett. 79, 2693 (2001); http://dx.doi.org/10.1063/1.1413221 (3 pages) | Cited 3 times

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We report on the two-dimensional confinement of light in the channel region of a bulk sapphire substrate, which was formed by utilizing the photoelastic effect in sapphire induced by a sputter-deposited SiO2 film. The experimental result, combined with the simulation results, shows that the sputter-deposited SiO2 films are compressively stressed up to 10 GPa level and that a 1.0-μm-thick film, for example, induces an index change of 5×10−3 in sapphire in the vertical direction. This amount of index change is found sufficient to support a fundamental mode at wavelengths of 1.54 μm or below. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
81.15.Cd Deposition by sputtering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

206 W continuous-wave TEM00 mode 1064 nm beam generation by a laser-diode-pumped Nd:YAG rod laser amplifier

Susumu Konno, Shuichi Fujikawa, and Koji Yasui

Appl. Phys. Lett. 79, 2696 (2001); http://dx.doi.org/10.1063/1.1409332 (2 pages) | Cited 6 times

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We demonstrate a 206 W 1064 nm beam generation at a beam quality of M2 = 1.34 with a Nd:YAG laser amplifier system. We also report on an efficient 150 W TEM00 mode diode-pumped Nd:YAG rod laser. © 2001 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Pk Continuous operation
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