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22 Oct 2001

Volume 79, Issue 17, pp. 2681-2850

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Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy

Shin-ichi Karimoto, Kenji Ueda, Michio Naito, and Tadayuki Imai

Appl. Phys. Lett. 79, 2767 (2001); http://dx.doi.org/10.1063/1.1410872 (3 pages) | Cited 18 times

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Single-crystalline Sr1−xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tconset = 41.5 K and Tczero = 39.0 K, which is close to the highest Tconset of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ cm just above Tc. © 2001 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.25.F- Transport properties
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Pulse-induced switches in a Josephson tunnel stacked device

G. P. Pepe, G. Peluso, M. Valentino, A. Barone, L. Parlato, E. Esposito, C. Granata, M. Russo, C. De Leo, and G. Rotoli

Appl. Phys. Lett. 79, 2770 (2001); http://dx.doi.org/10.1063/1.1402652 (3 pages) | Cited 3 times

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Pulse-activated transitions from the metastable to the running state and vice versa have been observed in a stacked double tunnel Nb-based Josephson system. Experimental results are compared with numerical simulations based on the Sine–Gordon model of the stacked junctions by injecting pulses with variable amplitude in one of the junctions of the stack, and observing the voltage response of the other junction. Both experimental and numerical results show the possibility to induce both direct and back-switching transitions from the metastable to the running state simply by changing the amplitude of the electronic pulses injected across the stack device. © 2001 American Institute of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.40.-n Fluctuation phenomena

Micromagnetic structure images taken using platinum coated tips

O. Teschke

Appl. Phys. Lett. 79, 2773 (2001); http://dx.doi.org/10.1063/1.1413730 (3 pages) | Cited 2 times

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We report on magnetic force microscopy images of data tracks written in recording media taken using Pt-coated tips. The force acting on the tip when immersed in the magnetic field of the substrate was modeled assuming diamagnetic and paramagnetic interactions. The sample scanning using Pt-coated tips shows an improvement in the image delineation of the magnetic field distribution compared to the images taken using Co-coated hard magnetic tips and the display of at least a twice higher data track density. © 2001 American Institute of Physics.
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75.50.Ss Magnetic recording materials
68.37.Rt Magnetic force microscopy (MFM)
07.05.Pj Image processing
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films

Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, and H. Ohno

Appl. Phys. Lett. 79, 2776 (2001); http://dx.doi.org/10.1063/1.1413732 (3 pages) | Cited 115 times

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Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K. © 2001 American Institute of Physics.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Anisotropy of superconductivity from MgB2 single crystals

M. Xu, H. Kitazawa, Y. Takano, J. Ye, K. Nishida, H. Abe, A. Matsushita, N. Tsujii, and G. Kido

Appl. Phys. Lett. 79, 2779 (2001); http://dx.doi.org/10.1063/1.1413729 (3 pages) | Cited 106 times

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Magnesium diboride (MgB2) single crystals, with a maximum size of 0.5×0.5×0.02 mm3, were grown by the vapor transport method in a sealed molybdenum crucible. A superconducting transition with the onset temperature of 38.6 K was confirmed by both transport and magnetization measurements. The upper critical field anisotropy ratio, Hc2∥ab(0)/Hc2∥c(0), was estimated to be 2.6 from the magnetic field-temperature phase diagram for MgB2 single crystals. © 2001 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.Op Mixed states, critical fields, and surface sheaths
74.25.Ha Magnetic properties including vortex structures and related phenomena
81.10.Fq Growth from melts; zone melting and refining
74.25.Dw Superconductivity phase diagrams
74.25.F- Transport properties

Ion-beam-assisted growth of CoPt3 films

D. Vasumathi, B. B. Maranville, and F. Hellman

Appl. Phys. Lett. 79, 2782 (2001); http://dx.doi.org/10.1063/1.1412430 (3 pages) | Cited 1 time

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CoPt3 films are known to exhibit room-temperature perpendicular magnetic anisotropy when grown between 200 °C–400 °C. We have used Ar ion-beam-assisted growth of CoPt3 films in an effort to enhance the anisotropy and also lower the temperature range where it occurs. We present a systematic study of the dependence of magnetic properties of the films on substrate temperature during growth, ion beam energy, and ion to atom arrival ratio, R, at the substrate. We find a significant increase of the anisotropy in films grown at 100 °C compared to the R = 0 value resulting in perpendicular anisotropy at moderate growth temperatures. At 250 °C and 400 °C, however, there is a monotonic decrease in anisotropy with R for all energies. © 2001 American Institute of Physics.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
75.70.Ak Magnetic properties of monolayers and thin films
68.55.A- Nucleation and growth
81.05.Bx Metals, semimetals, and alloys
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Defect-modified exchange bias

Joo-Von Kim and R. L. Stamps

Appl. Phys. Lett. 79, 2785 (2001); http://dx.doi.org/10.1063/1.1413731 (3 pages) | Cited 17 times

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The influence of local defects in exchange biased ferromagnetic/antiferromagnetic bilayers is studied using numerical simulations. The location of defects relative to the interface is found to be the main factor determining the magnitude of coercive and bias field modifications. One consequence is that some types of defects control stability of partial wall structures. This may explain coercivity enhancement as arising from irreversible pinning of partial domain walls in the antiferromagnet. © 2001 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
75.40.Mg Numerical simulation studies
75.60.Ch Domain walls and domain structure
75.70.Kw Domain structure (including magnetic bubbles and vortices)

Switch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays

Yuankai Zheng, Xiaoyan Wang, Dan You, and Yihong Wu

Appl. Phys. Lett. 79, 2788 (2001); http://dx.doi.org/10.1063/1.1410875 (3 pages) | Cited 1 time

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A switch-free read operation design and cell measurement method for magnetic tunnel junction magnetic random access memory arrays with a peripheral circuitry is presented. The design effectively reduces the shunting effect and maintains the signal at the original level even for the cases when the lead resistance cannot be neglected. It also allowed us to measure the magnetoresistance curve of each cell independently without the need of a transistor or a diode. Both simulation and experiments showed that this method is useful in the readout operation of the tunnel junction magnetic random access memory as well as in the characterization of its individual cells. © 2001 American Institute of Physics.
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85.75.Dd Magnetic memory using magnetic tunnel junctions
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