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29 Oct 2001

Volume 79, Issue 18, pp. 2865-3001

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Three-stack, three-color quantum-well infrared photodetector for mid-, long-, and very long-wavelength infrared detection

Lin Jiang, Sheng S. Li, M. Z. Tidrow, W. R. Dyer, W. K. Liu, J. M. Fastenau, and T. R. Yurasits

Appl. Phys. Lett. 79, 2982 (2001); http://dx.doi.org/10.1063/1.1415409 (3 pages) | Cited 9 times

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A high-performance three-stack, three-color quantum-well infrared photodetector for the mid-, long-, and very long-wavelength infrared detection has been developed in this work. The detection bandwidths with full-width at half-maximum are 5.9–7.0, 9.1–11.2, and 12.2–16.9 μm, which cover the major portion or entire range of the three atmospheric blocking bands: the water band (5.5–7.5 μm), the ozone band (9.4–9.9 μm), and the carbon dioxide band (14–16 μm). Values of the dark-current detectivity were found to be D∗ = 8.5×1012 cm Hz1/2/W at T = 40 K, Vb = −1.3 V, and λp = 6.5 μm for the mid-wavelength infrared stack; D∗ = 1.5×1010 cm Hz1/2/W at T = 40 K, Vb = −1.4 V, and λp = 10.1 μm for the long-wavelength infrared stack, and D∗ = 1.2×1011 cm Hz1/2/W at T = 30 K, Vb = −1.1 V, and λp = 15.1 μm for the very long-wavelength infrared stack. © 2001 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Xia Guo, Guang-Di Shen, Guo-Hong Wang, Wen-Jun Zhu, Jin-Yu Du, Guo Gao, De-Shu Zou, Yong-Hai Chen, Xiao-Yu Ma, and Liang-Hui Chen

Appl. Phys. Lett. 79, 2985 (2001); http://dx.doi.org/10.1063/1.1415041 (2 pages) | Cited 8 times

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Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 μm GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15° package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Two-dimensional simulation of polymer field-effect transistor

N. Tessler and Y. Roichman

Appl. Phys. Lett. 79, 2987 (2001); http://dx.doi.org/10.1063/1.1415374 (3 pages) | Cited 29 times

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A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of this device configuration on the measured “intrinsic” material properties is also discussed and shown to explain previously reported features. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Suppression of 1/f noise by permanent magnetic field in ion-implanted HgCdTe photodiodes

Yu. L. Khait, V. Garber, G. Bahir, and I. Snapiro

Appl. Phys. Lett. 79, 2990 (2001); http://dx.doi.org/10.1063/1.1406987 (3 pages) | Cited 1 time

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A brief report on the experimental evidence and theoretical explanation of substantial effects of a permanent magnetic field (PMF) of B = 0–2 T on 1/f noise in HgCdTe n+−p high performance planar photodiodes (HPPD) is presented. It is shown that the PMF suppresses 1/f noise in the HPPD at lower frequencies fL<f0 ≈ 5–7 s−1 and increases it at higher ones fH>f0. These PMF effects follow from the earlier proposed nanoscopic stochastic theory of 1/f noise in solids. The proposed theoretical model is in good agreement with observations. © 2001 American Institute of Physics.
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73.61.Ga II-VI semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Td Noise processes and phenomena
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