APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

29 Oct 2001

Volume 79, Issue 18, pp. 2865-3001

Return to All Sections
back to top
RSS Feeds

Two-phase (ferroelectric and antiferroelectric) nuclei and diffuse phase transition in the vicinity of the ferroelectric–antiferroelectric–paraelectric triple point

V. M. Ishchuk, S. V. Matveev, and V. L. Sobolev

Appl. Phys. Lett. 79, 2949 (2001); http://dx.doi.org/10.1063/1.1414300 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
X-ray studies of the crystal structure in Pb1−x(Li1/2La1/2)xZr1−yTiyO3 solid solutions at the phase transition from a paraelectric state into ordered states near the triple ferroelectric–antiferroelectric–paraelectric point of the “Ti-content–temperature” phase diagram are carried out. Analysis of the shape of characteristic x-ray lines indicates the presence of two-phase nuclei with ferroelectric and antiferroelectric types of dipole ordering in the crystal lattice of the solid solutions above the point of the paraelectric phase transition (the Curie temperature). © 2001 American Institute of Physics.
Show PACS
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Niobate-based microwave dielectrics suitable for third generation mobile phone base stations

H. Hughes, D. M. Iddles, and I. M. Reaney

Appl. Phys. Lett. 79, 2952 (2001); http://dx.doi.org/10.1063/1.1414296 (3 pages) | Cited 60 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High unloaded quality factor (Qu), zero temperature coefficient of resonant frequency (τf) and high relative permittivity (ϵr) microwave dielectric ceramics have been fabricated based on BaZn1/3Nb2/3O3. Properties have been optimized for the composition, 0.9Ba([Zn0.60Co0.40]1/3Nb2/3)O3–0.1Ba(Ga0.5Ta0.5)O3 for which Qu = 32 000 @ 3.05 GHz, ϵr = 35, and τf = 0. The new compounds are disordered according to x-ray diffraction (XRD) and may be indexed using a simple perovskite unit cell, a = 4.09 Å. Small peaks (e.g., d ≈ 3.01 Å, relative intensity, 4.5) attributed to a barium niobate second phase are also present in XRD patterns. These ceramics are suitable in terms of cost and performance for base stations supporting third generation architecture. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
84.30.Vn Filters
77.22.Ch Permittivity (dielectric function)

Scanning-nonlinear-dielectric-microscopy study on periodically poled LiNbO3 for a high-performance quasi-phase matching device

Yasuo Cho, Satoshi Kazuta, and Hiromasa Ito

Appl. Phys. Lett. 79, 2955 (2001); http://dx.doi.org/10.1063/1.1414299 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Studies of the domain distribution of periodically poled LiNbO3 (PPLN) using scanning nonlinear dielectric microscopy (SNDM) were performed for high-quality quasi-phase matching (QPM) devices and some very important results were obtained. First, a single domain surface layer formed on PPLN was found and second, the SNDM studies also revealed that a very strong residual stress or an internal electric field remained in PPLN fabricated using the application of a high voltage due to the pinning effect in single crystal LiNbO3. This stress or internal field substantially reduced the nonlinear dielectric constant of LiNbO3. By annealing to release this stress, it was confirmed that the LiNbO3 recovered from the reduced nonlinear dielectric constant. In the optical region, this constant is equivalent to the second harmonic generation constant, therefore, it is proposed that annealing is an effective method for obtaining a highly efficient high-performance QPM device. © 2001 American Institute of Physics.
Show PACS
77.22.Ch Permittivity (dielectric function)
42.65.Yj Optical parametric oscillators and amplifiers

Thermally induced Zr incorporation into Si from zirconium silicate thin films

M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo

Appl. Phys. Lett. 79, 2958 (2001); http://dx.doi.org/10.1063/1.1415418 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Monochromatic x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Rutherford backscattering spectrometry are used to study the outdiffusion of Zr from the alternate gate dielectric candidate ZrSixOy thin films deposited on Si(100). We find that Zr incorporation into Si from ZrSixOy appears to occur at annealing temperatures higher than 1000 °C. Incorporation of Zr to depths of up to 23 nm into the silicon substrate is observed. A diffusion coefficient of D0 ∼ 2×10−15 cm2/s is estimated from the associated depth profiles. © 2001 American Institute of Physics.
Show PACS
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects
61.72.Cc Kinetics of defect formation and annealing
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
82.80.Rt Time of flight mass spectrometry
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Jv Interfaces; heterostructures; nanostructures

Epitaxial growth of ferroelectric SrBi2Ta2O9 thin films of mixed (100) and (116) orientation on SrLaGaO4(110)

Ho Nyung Lee, Dmitri N. Zakharov, Stephan Senz, Alain Pignolet, and Dietrich Hesse

Appl. Phys. Lett. 79, 2961 (2001); http://dx.doi.org/10.1063/1.1415376 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial ferroelectric SrBi2Ta2O9 (SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO4 (SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)‖SLG(110); SBT[001]‖SLG[001] and SBT(116)‖SLG(110); SBT[math10]‖SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.© 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition

Bulk ferroelectric domain nucleation in KTiOPO4 crystals

P. Urenski, M. Molotskii, and G. Rosenman

Appl. Phys. Lett. 79, 2964 (2001); http://dx.doi.org/10.1063/1.1413959 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ferroelectric domain inversion in KTiOPO4 crystals has been studied for two different states of these crystals: superionic (at room temperature), and dielectric (at low temperature, when the ion transport is frozen). The structure of the ferroelectric domain inverted at room temperature demonstrates a dramatic domain broadening due to a bulk domain nucleation. The observed effect is ascribed to highly mobile potassium ions that contribute to the minimization of the depolarizing field and the surface energy of domain walls of new domain nuclei. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
66.30.H- Self-diffusion and ionic conduction in nonmetals
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close