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29 Oct 2001

Volume 79, Issue 18, pp. 2865-3001

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Conducting probe atomic force microscopy applied to organic conducting blends

Jérôme Planès, Frédéric Houzé, Pascal Chrétien, and Olivier Schneegans

Appl. Phys. Lett. 79, 2993 (2001); http://dx.doi.org/10.1063/1.1413717 (3 pages) | Cited 19 times

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Atomic force microscopy (AFM) is used in contact mode with a conducting tip to probe the conducting network of the conductive polymer polyaniline blended in an insulating polymer matrix. The high resistance contrast and sharp boundaries between conductive and insulating phases is observed down to scales in the 10 nm range. The very low scale electric dispersion corresponds to the morphologic phase segregation known from conventional AFM or transmission electron microscopy measurements, which is responsible for the ultralow electrical percolation threshold previously demonstrated in this system. © 2001 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
68.37.Ps Atomic force microscopy (AFM)
61.41.+e Polymers, elastomers, and plastics
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
82.35.Cd Conducting polymers
64.75.-g Phase equilibria

Fabrication of bulk heterojunction plastic solar cells by screen printing

Sean E. Shaheen, Rachel Radspinner, Nasser Peyghambarian, and Ghassan E. Jabbour

Appl. Phys. Lett. 79, 2996 (2001); http://dx.doi.org/10.1063/1.1413501 (3 pages) | Cited 149 times

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We demonstrate the use of screen printing in the fabrication of ultrasmooth organic-based solar cells. Organic films on the order of several tens of nanometers in thickness and 2.6 nm surface roughness were made. The first-generation screen-printed plastic solar cells demonstrated 4.3% in power conversion efficiency when using an aluminum electrode and 488 nm illumination. © 2001 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.61.Ph Polymers; organic compounds
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Observation of narrow-band Si L-edge Čerenkov radiation generated by 5 MeV electrons

W. Knulst, O. J. Luiten, M. J. van der Wiel, and J. Verhoeven

Appl. Phys. Lett. 79, 2999 (2001); http://dx.doi.org/10.1063/1.1415049 (3 pages) | Cited 9 times

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Narrow-band Čerenkov radiation at 99.7 eV has been generated by 5 MeV electrons in a silicon foil, with a yield ∼ 1×10−3 photon/electron. These measurements demonstrate the feasibility of a compact, narrow-band, and intense soft x-ray source based on small electron accelerators. The observed yield and dependence of the photon spectrum on emission angle are in agreement with theoretical predictions for Čerenkov radiation based on refractive index data of silicon. © 2001 American Institute of Physics.
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61.80.Fe Electron and positron radiation effects
07.85.-m X- and γ-ray instruments
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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