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29 Oct 2001

Volume 79, Issue 18, pp. 2865-3001

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Controllable π SQUID

J. J. A. Baselmans, B. J. van Wees, and T. M. Klapwijk

Appl. Phys. Lett. 79, 2940 (2001); http://dx.doi.org/10.1063/1.1414304 (3 pages) | Cited 17 times

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We have fabricated and studied a promising kind of direct current superconducting quantum interference device (dc-SQUID) in which the magnitude and sign of the critical current of the individual Josephson junctions can be controlled by additional voltage probes connected to the junctions. We show that the amplitude of the voltage oscillations of the SQUID as a function of the applied magnetic field can be tuned and that the phase of the oscillations can be switched between 0 and π in the temperature range of 0.1–4.2 K using a suitable control voltage. This is equivalent to the external application of (n+1/2) flux quantum. © 2001 American Institute of Physics.
Show PACS
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.25.Sv Critical currents
74.50.+r Tunneling phenomena; Josephson effects

Improved superconducting quantum interference devices by resistance asymmetry

G. Testa, S. Pagano, E. Sarnelli, C. R. Calidonna, and M. Mango Furnari

Appl. Phys. Lett. 79, 2943 (2001); http://dx.doi.org/10.1063/1.1413733 (3 pages) | Cited 4 times

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Direct current superconducting quantum interference devices made by Josephson junctions with asymmetric shunt resistances have been numerically investigated in the low temperature regime. When combined with a damping resistance, the asymmetry leads to a flux to voltage transfer coefficient several times larger than the one typical of symmetric devices, together with a lower magnetic flux noise. These results show that this type of asymmetric device may replace the standard ones in a large number of magnetometric applications, improving the sensitivity performance. The large transfer coefficient may also simplify the readout electronics allowing a direct coupling of asymmetric devices to an external preamplifier, without the need of an impedance matching flux transformer. © 2001 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)

Ballistic magnetoresistance in a nanocontact between a Ni cluster and a magnetic thin film

M. Muñoz, G. G. Qian, N. Karar, H. Cheng, I. G. Saveliev, N. García, T. P. Moffat, P. J. Chen, L. Gan, and W. F. Egelhoff

Appl. Phys. Lett. 79, 2946 (2001); http://dx.doi.org/10.1063/1.1413734 (3 pages) | Cited 10 times

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We present measurements of ballistic magnetoresistance in nanocontacts grown by electrodeposition of Ni microclusters on magnetic thin films covered by aluminum oxide layers, using a technique proposed by Schad et al. [D. Allen, R. Schad, G. Zangari, I. Zana, D. Yang, M. C. Tondra, and D. Wang, J. Vac. Sci. Technol. A. 18, 1830 (2000); Appl. Phys. Lett. 76, 407 (2000); D. Allen, R. Schad, G. Zangari, I. Zana, D. Yang, M. C. Tondra, D. Wang, and D. Reed, J. Appl. Phys. 89, 6662 (2001)]. The measurements are made on single Ni clusters in contact with a Ni and Co thin film. We measure the magnetoresistance and observe the relaxation of the magnetization and electrical resistance as a function of time. The clusters are electrodeposited under several different experimental conditions. Some are deposited randomly on an unpatterned film and some through various patterned photoresists that control the location at which the cluster is grown. The typical contact size is estimated from the electrical resistance to be 10–30 nm. Ballistic magnetoresistance values up to 14% are obtained in these first experiments. © 2001 American Institute of Physics.
Show PACS
75.75.-c Magnetic properties of nanostructures
81.07.Lk Nanocontacts
73.63.Rt Nanoscale contacts
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.15.Pq Electrodeposition, electroplating
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