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5 Nov 2001

Volume 79, Issue 19, pp. 3017-3198

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Photonic band-gap guidance in high-porosity luminescent porous silicon

P. Ferrand, D. Loi, and R. Romestain

Appl. Phys. Lett. 79, 3017 (2001); http://dx.doi.org/10.1063/1.1414302 (3 pages) | Cited 8 times

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We demonstrate a nanoporous silicon (nPS) multilayered structure, offering an efficient photonic band-gap (PBG) single-mode guidance in a high-porosity (i.e., low index) layer in the near-infrared. We show the good agreement between the calculated band structure and the measured spectral range of efficient guiding. We discuss the different kinds of guided modes that exist within the structure, and verify that only one PBG mode can be guided efficiently. Quantitative measurements of the losses are performed using the room-temperature photoluminescence of nPS. © 2001 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.55.Mb Porous materials
42.70.Qs Photonic bandgap materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Hybrid optical fiber-apertured cantilever near-field probe

Phan Ngoc Minh, Takahito Ono, Hisashi Watanabe, Seung Soup Lee, Yoichi Haga, and Masayoshi Esashi

Appl. Phys. Lett. 79, 3020 (2001); http://dx.doi.org/10.1063/1.1416475 (3 pages) | Cited 6 times

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In this letter, we propose a hybrid optical fiber-apertured cantilever probe for optical near-field applications. A thermal SiO2 cantilever beam with a SiO2 pyramidal tip was formed by Si micromachining technique and bonded with an optical fiber using a polyimide adhesive layer. A subwavelength aperture at the apex of the SiO2 tip was formed by etching the SiO2 in a buffered-HF solution. Optical near-field imaging in contact mode was observed with the fabricated probe. The probe could work in contact mode because the cantilever at the end of the fiber can flexibly move on the sample surface. By detecting the far-field light which is reflected-back by the tip of the cantilever, the vibration of the cantilever was observed using the probe itself. With the proposed structure, a hybrid fiber bundle-apertured cantilever array is feasible for application in parallel near-field processing or data storage. © 2001 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
42.81.Wg Other fiber-optical devices
07.10.Cm Micromechanical devices and systems
81.20.Wk Machining, milling
07.60.Vg Fiber-optic instruments
81.65.Cf Surface cleaning, etching, patterning

Programmable organic light-emitting devices

C.-C. Wu, C.-W. Chen, Y.-T. Lin, H.-L. Yu, J.-H. Hsu, and T.-Y. Luh

Appl. Phys. Lett. 79, 3023 (2001); http://dx.doi.org/10.1063/1.1414305 (3 pages) | Cited 10 times

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In this letter, we report a promising type of electrically programmable, i.e., reconfigurable, organic light-emitting devices (OLEDs) incorporating a thin carrier-blocking layer as the sacrificial fusing layer. In such devices, the carrier-blocking layer has a lower glass transition temperature than neighboring layers. By raising the internal temperature of the device above the transition temperature of the carrier-blocking layer with a large enough current, interdiffusion between organic layers could occur through such a layer. As a consequence, neighboring layers are fused and a new path for carrier transport is formed, bypassing the carrier-blocking property and altering the device characteristics. A device that emits blue light as fabricated but can be transformed into a green-emitting one is demonstrated. Such a type of device may be used for color pixels in OLED displays, user-programmable OLED applications, and nonvolatile memory devices.© 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
68.35.Fx Diffusion; interface formation

Conversion of infrared radiation into red emission in YVO4:Yb,Ho

W. Ryba-Romanowski, S. Golab, G. Dominiak-Dzik, P. Solarz, and T. Lukasiewicz

Appl. Phys. Lett. 79, 3026 (2001); http://dx.doi.org/10.1063/1.1415767 (3 pages) | Cited 18 times

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Upon continuous wave excitation around 1 μm, a YVO4 crystal codoped with ytterbium and holmium exhibits intense red emission originating in the 5F5 level and considerably weaker green emission originating in the 5S2 level of Ho3+. The ratio of the red to green emission intensities is 17:1 at 300 K. The dependence of the intensity of both emissions on the pump power is nearly the same but the mechanisms determined on the basis of short pulse excitation are found to be different. It is concluded that the green emission is excited by two consecutive energy transfers from Yb3+ to Ho3+, whereas excited state absorption is involved in the excitation of red emission. © 2001 American Institute of Physics.  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
78.45.+h Stimulated emission

Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback

R. W. Martin, P. R. Edwards, H.-S. Kim, K.-S. Kim, T. Kim, I. M. Watson, M. D. Dawson, Y. Cho, T. Sands, and N. W. Cheung

Appl. Phys. Lett. 79, 3029 (2001); http://dx.doi.org/10.1063/1.1415769 (3 pages) | Cited 17 times

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The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 μm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off. © 2001 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Nondegenerate monopole-mode two-dimensional photonic band gap laser

Hong-Gyu Park, Jeong-Ki Hwang, Joon Huh, Han-Youl Ryu, Yong-Hee Lee, and Jeong-Soo Kim

Appl. Phys. Lett. 79, 3032 (2001); http://dx.doi.org/10.1063/1.1416163 (3 pages) | Cited 54 times

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We propose and demonstrate photonic band gap lasing action from a nondegenerate monopole-mode, high-quality factor cavity. By optical pumping at room temperature, the monopole-mode laser is realized and identified from its mode shape, spectrum, and polarization. The monopole-mode laser shows nondegeneracy and genuine two-dimensional oscillation with incident threshold pump power less than 0.3 mW. This laser mode has a small modal volume of ∼ 4.5(λ/2nslab)3 and shows a quality factor of larger than 1900, estimated from the spectral linewidth below threshold. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.55.Rz Doped-insulator lasers and other solid state lasers

Efficient coupling of surface plasmon polaritons to radiation using a bi-grating

P. T. Worthing and W. L. Barnes

Appl. Phys. Lett. 79, 3035 (2001); http://dx.doi.org/10.1063/1.1414294 (3 pages) | Cited 48 times

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A nanostructured surface in the form of a bi-grating is shown to efficiently couple surface plasmon polaritons to free-space radiation in the visible part of the spectrum. Coupling was achieved for all propagation directions of the surface mode and the efficiency found to be independent of the propagation direction, taking a mean value of 60% for the structure examined. The consequences of the findings for emissive devices that make use of surface plasmons are discussed. © 2001 American Institute of Physics.
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73.22.Lp Collective excitations
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.79.Dj Gratings
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Thermal characteristics of optical gain for GaInNAs quantum wells at 1.3 μm

Chang Kyu Kim and Yong Hee Lee

Appl. Phys. Lett. 79, 3038 (2001); http://dx.doi.org/10.1063/1.1418022 (3 pages) | Cited 16 times

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The gain characteristics of 1.3-μm-wavelength GaInNAs, InGaAlAs, and InGaAsP single-quantum-well structures are studied and compared. Among these quantum wells, GaInNAs offers the lowest carrier density over a wide range of temperature (300–400 K) for applications that require high gain because of the highest differential gain. It is due to the large electron effective mass originating from the nitrogen incorporation. The change in threshold carrier density with temperature is smallest for GaInNAs because of the large conduction band offset and the large differences in the band gap energy between the well and the barrier. The interaction with the temperature-independent nitrogen states makes the shift of gain with temperature slowest as well. For these reasons, the threshold current of GaInNAs is expected to be more temperature independent than those of other materials.© 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
73.21.Fg Quantum wells
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