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5 Nov 2001

Volume 79, Issue 19, pp. 3017-3198

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Measurement of ion temperatures in a large-diameter electron cyclotron resonance plasma

Mayuko Koga, Takenori Yoshizawa, Yoko Ueda, Yoshinobu Kawai, and Akira Yonesu

Appl. Phys. Lett. 79, 3041 (2001); http://dx.doi.org/10.1063/1.1416154 (3 pages) | Cited 7 times

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The ion temperature in a large-diameter electron cyclotron resonance plasma is measured using high-resolution optical emission spectroscopy, and the correlation between the ion temperature and fluctuations observed near the chamber wall is investigated. Furthermore, the effect of multicusped fields on the ion temperature is examined. The ion temperature and the amplitude of ion saturation current fluctuations are found to decrease when multicusped fields are applied. The ion temperature and fluctuations increase with increasing incident microwave powers from 2.0 to 2.5 kW, indicating that the ion temperature is correlated with the fluctuation amplitude. The measurement of the ion saturation current fluctuation and floating potential fluctuation suggests that the fluctuations are excited by flute instability. © 2001 American Institute of Physics.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.-b Plasma properties
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.50.Sw Plasma heating by microwaves; ECR, LH, collisional heating
52.25.Gj Fluctuation and chaos phenomena

Quasi-direct current plasma immersion ion implantation

Xuchu Zeng, Ricky K. Y. Fu, Dixon T. K. Kwok, and Paul K. Chu

Appl. Phys. Lett. 79, 3044 (2001); http://dx.doi.org/10.1063/1.1415404 (3 pages) | Cited 9 times

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Quasi-dc (direct current) plasma immersion ion implantation (PIII) is demonstrated in the long-pulse mode. To prevent plasma extinction as a result of the sheath reaching the vacuum chamber wall in long-pulse experiments, a grounded grid is used to partition the chamber into two halves. The pulse width can be readily increased to 500 μs that is more than 10 times longer than that in typical low-pressure PIII experiments for monoenergetic implantation (ion mean free path≫sheath thickness). The electron saturation current measured by the Langmuir probe indicates that the grounded grid indeed stops the propagation of the plasma sheath. After the plasma sheath reaches the grounded grid, the pulse current drops to a smaller value indicative of the quasi-dc PIII mode. The plasma recovery time is found to be 800 μs thereby limiting the maximum pulsing frequency to below 1 kHz, and the preferred pulse duration window is between 100 and 500 μs. The secondary ion mass spectrometry profiles show that low energy ions are reduced using long pulses. This operation mode thus offers the unique advantage of a smaller low-energy ion component, that is, more monoenergetic ion distribution, and less surface damage compared to conventional short-pulse PIII. When compared to dc-PIII, this mode retains the discharge characteristics and works well for insulators. © 2001 American Institute of Physics.
Show PACS
52.77.Dq Plasma-based ion implantation and deposition
61.72.up Other materials
52.40.Kh Plasma sheaths
52.70.Ds Electric and magnetic measurements
52.70.Nc Particle measurements
85.40.Ry Impurity doping, diffusion and ion implantation technology
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