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5 Nov 2001

Volume 79, Issue 19, pp. 3017-3198

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Green emission from cerium hydroxide layers formed in Si/In/CeO2/Si structures

Chong-Geol Kim

Appl. Phys. Lett. 79, 3047 (2001); http://dx.doi.org/10.1063/1.1416161 (3 pages) | Cited 5 times

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Green photoluminescence (PL) was observed from the Si/In/CeO2 on Si substrates at room temperature. Indium was very thinly deposited on CeO2 at 400 °C. X-ray photoelectron spectroscopy indicated the formation of a cerium hydroxide in the indium-included Si/CeO2 structure. The reacting CeO2 with In became the defective CeO2−x, and then the defective CeO2−x was changed to Ce(OH)4 in poor vacuums and air. The green PL was due to Ce(OH)4. The luminescence disappeared by high-temperature annealing. Another PL peak appeared from the sample annealed at 1000 °C. © 2001 American Institute of Physics.
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78.66.Nk Insulators
61.72.Cc Kinetics of defect formation and annealing
79.60.Jv Interfaces; heterostructures; nanostructures
78.55.Hx Other solid inorganic materials

Micromodification of silicon dioxide in a variable pressure/environmental scanning electron microscope

Marion A. Stevens-Kalceff

Appl. Phys. Lett. 79, 3050 (2001); http://dx.doi.org/10.1063/1.1415773 (3 pages) | Cited 8 times

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Electron irradiation in the ionized gaseous environment of a variable pressure/environmental scanning electron microscope induces modifications of poorly conducting specimens. In particular it is shown, using nondestructive depth-resolved cathodoluminescence microanalysis, that environmental ions can penetrate into the bulk of the irradiated specimen and modify the local microstructure of the irradiated specimen. The observed modifications are attributed to electric fields associated with trapped electrons and environmental ions. These effects can be controlled by varying the environmental gas and/or electron beam parameters. © 2001 American Institute of Physics.
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61.80.Fe Electron and positron radiation effects
78.60.Hk Cathodoluminescence, ionoluminescence
68.35.B- Structure of clean surfaces (and surface reconstruction)

Superhard, conductive coatings for atomic force microscopy cantilevers

C. Ronning, O. Wondratschek, M. Büttner, H. Hofsäss, J. Zimmermann, P. Leiderer, and J. Boneberg

Appl. Phys. Lett. 79, 3053 (2001); http://dx.doi.org/10.1063/1.1415354 (3 pages) | Cited 3 times

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Boron carbide thin films were grown by mass selected ion beam deposition using low energy 11B+ and 12C+ ions at room temperature. The amorphous films exhibit any desired stoichiometry controlled by the ion charge ratio B+/C+. Films with a stoichiometry of B4C showed the optimal combination of a high mechanical strength and a low electrical resistivity for the coating of atomic force microscopy (AFM) silicon cantilevers. The properties of such AFM tips were evaluated and simultaneous topography and Kelvin mode AFM measurements with high lateral resolution were performed on the systems (i) Au nanoparticles on a p-WS2 surface and (ii) conducting/superconducting YBa2Cu3O7−x. © 2001 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.60.Bs Mechanical and acoustical properties
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification

Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

Robert S. Okojie, Ming Xhang, Pirouz Pirouz, Sergey Tumakha, Gregg Jessen, and Leonard J. Brillson

Appl. Phys. Lett. 79, 3056 (2001); http://dx.doi.org/10.1063/1.1415347 (3 pages) | Cited 55 times

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We have observed the formation of single and multiple stacking faults that sometimes give rise to 3C–SiC bands in a highly doped n-type 4H–SiC epilayer following dry thermal oxidation. Transmission electron microscopy following oxidation revealed single stacking faults and bands of 3C–SiC in a 4H–SiC matrix within the 4H–SiC epilayer. These bands, parallel to the (0001) basal plane, were not detected in unoxidized control samples. In addition to the 3.22 eV peak of 4H–SiC, Cathodoluminescence spectroscopy at 300 K after oxidation revealed a spectral peak at 2.5 eV photon energy that was not present in the sample prior to oxidation. The polytypic transformation is tentatively attributed to the motion of Shockley partial dislocations on parallel (0001) slip planes. The generation and motion of these partials may have been induced by stresses caused either by the heavy doping of the epilayer or nucleation from defect. © 2001 American Institute of Physics.
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81.65.Mq Oxidation
61.72.Nn Stacking faults and other planar or extended defects
64.70.K- Solid-solid transitions
81.05.Hd Other semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
62.20.-x Mechanical properties of solids
61.72.Lk Linear defects: dislocations, disclinations

Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy

L. Zhang, H. F. Tang, and T. F. Kuech

Appl. Phys. Lett. 79, 3059 (2001); http://dx.doi.org/10.1063/1.1415774 (3 pages) | Cited 14 times

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Antimony (Sb), an isoelectronic impurity, has been studied as a surfactant during the lateral epitaxial overgrowth (LEO) of gallium nitride (GaN) by metalorganic vapor phase epitaxy (MOVPE). The presence of Sb in the gas phase was found to alter both the LEO growth rates and the predominant facet formations. Vertical facets to the LEO growth appear with the addition of Sb under conditions that normally produce triangular or sloped sidewalls over a range of growth temperatures. While Sb alters the growth facets, only a small amount of Sb was incorporated into the GaN, suggesting that Sb acts as a surfactant during the GaN MOVPE growth. Sb addition produces surface conditions characteristic of a Ga-rich surface stoichiometry indicating both a possible change in the reactivity of NH3 and/or enhanced surface diffusion of Ga adatom species. © 2001 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

Shigeo Yamaguchi, Masayoshi Kosaki, Yasuyukihiro Watanabe, Yohei Yukawa, Shugo Nitta, Hiroshi Amano, and Isamu Akasaki

Appl. Phys. Lett. 79, 3062 (2001); http://dx.doi.org/10.1063/1.1416169 (3 pages) | Cited 12 times

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We have succeeded in growing crack-free AlN of even 0.5 μm thickness on GaN by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. Crack-free AlN was grown on GaN at 1000 °C with N2 carrier gas. An AlN layer was grown on GaN of 2 μm thickness grown at 1050 °C, following the low-temperature deposition of an AlN buffer layer of 30 nm. No cracks were observed in the microphotographs of AlN on GaN grown using N2. X-ray diffraction analysis revealed that AlN/GaN superlattices (SLs) were coherently grown on GaN, and satellite peaks up to the third order were observed. The structure of AlN/GaN SLs on GaN showed a maximum electron mobility of 1580 cm2/V s at room temperature and a nominal sheet carrier density of 8.4×1012 cm−2. © 2001 American Institute of Physics.
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68.65.Cd Superlattices
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ey III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Dn Low-field transport and mobility; piezoresistance

Enabling electron diffraction as a tool for determining substrate temperature and surface morphology

V. P. LaBella, D. W. Bullock, C. Emery, Z. Ding, and P. M. Thibado

Appl. Phys. Lett. 79, 3065 (2001); http://dx.doi.org/10.1063/1.1416477 (3 pages) | Cited 12 times

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The reconstruction transitions for the GaAs(001) surface have been identified as a function of the band gap-derived substrate temperature and As4 beam equivalent pressure. Surface morphology measurements using in situ scanning tunneling microscopy reveal that the surface spontaneously forms a random distribution of two-dimensional islands. The onset of island formation is coincident with the reflected high-energy electron diffraction pattern changing from the β to α subphase of the (2×4) reconstruction. An electron diffraction-based method for determining the substrate temperature and engineering the surface morphology with a desired amount of roughness is presented. © 2001 American Institute of Physics.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition

Masataka Hasegawa, Tokuyuki Teraji, and Satoshi Koizumi

Appl. Phys. Lett. 79, 3068 (2001); http://dx.doi.org/10.1063/1.1417514 (3 pages) | Cited 20 times

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The lattice location of phosphorus dopant atoms in n-type homoepitaxial diamond {111} films grown by chemical-vapor deposition has been investigated by Rutherford backscattering spectrometry and particle-induced x-ray emission under ion-channeling conditions. It is found that phosphorus dopant atoms occupy the substitutional sites almost completely in the host diamond lattice. The substitutional fraction of phosphorus was more than 0.9 for 〈011〉 and 〈111〉 directions. Present observation implies that the deep ground-state energy level of phosphorus in diamond, which is at 0.6 eV below the bottom of the conduction band, is attributed to the relaxation of surrounding carbon atoms. © 2001 American Institute of Physics.
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61.72.S- Impurities in crystals
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
71.55.Cn Elemental semiconductors
61.72.up Other materials

Three-dimensional phase field microelasticity theory and modeling of multiple cracks and voids

Y. M. Jin, Y. U. Wang, and A. G. Khachaturyan

Appl. Phys. Lett. 79, 3071 (2001); http://dx.doi.org/10.1063/1.1418260 (3 pages) | Cited 15 times

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It is proved that the stress-free strain distribution minimizing the strain energy of the homogeneous modulus body fully determines the elasticity of the discontinuous body. This result is used as a basis for the proposed three-dimensional phase field microelasticity theory and model of a discontinuous body with cracks and voids in elastically anisotropic crystal under applied stress. The elastic equilibrium and spontaneous evolution of these defects are described by the Ginzburg–Landau kinetic equation. Examples of computations of elastic equilibrium and evolutions of systems with cracks and/or voids are considered. © 2001 American Institute of Physics.
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46.25.Cc Theoretical studies
62.20.D- Elasticity
46.50.+a Fracture mechanics, fatigue and cracks
62.20.M- Structural failure of materials
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.Bb Theories and models of crystal defects
46.15.Cc Variational and optimizational methods

Electrical characterization of 1.8 MeV proton-bombarded ZnO

F. D. Auret, S. A. Goodman, M. Hayes, M. J. Legodi, H. A. van Laarhoven, and D. C. Look

Appl. Phys. Lett. 79, 3074 (2001); http://dx.doi.org/10.1063/1.1415050 (3 pages) | Cited 131 times

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We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitance–voltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each incident proton removes about two orders of magnitude less carriers than in GaN. Deep level transient spectroscopy indicates a similar effect: the two electron traps detected are introduced in extremely low rates. One possible interpretation of these results is that the primary radiation-induced defects in ZnO may be unstable at room temperature and anneal out without leaving harmful defects that are responsible for carrier compensation. © 2001 American Institute of Physics.
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71.55.Gs II-VI semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry

C. Cantoni, D. K. Christen, R. Feenstra, A. Goyal, G. W. Ownby, D. M. Zehner, and D. P. Norton

Appl. Phys. Lett. 79, 3077 (2001); http://dx.doi.org/10.1063/1.1407857 (3 pages) | Cited 21 times

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We present a study of the {100}〈100〉 biaxially textured Ni(001) surface and seed-layer growth using in situ reflection high-energy electron diffraction and Auger electron spectroscopy. Our observations are consistent with formation of a c(2×2) two-dimensional superstructure due to the surface segregation of sulfur contained in the metal. We show that this superstructure can have a dramatic effect on the heteroepitaxial growth of oxide seed layers. In particular, the surface superstructure promotes the (200) epitaxial oxide growth of Y2O3-stabilized ZrO2, which is necessary for the development of high-Jc superconducting films for coated conductors. © 2001 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
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