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12 Nov 2001

Volume 79, Issue 20, pp. 3215-3366

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Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation

G. Walter, N. Holonyak, J. H. Ryou, and R. D. Dupuis

Appl. Phys. Lett. 79, 3215 (2001); http://dx.doi.org/10.1063/1.1416158 (3 pages) | Cited 21 times

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Data are presented showing that a p–n InP–In0.5Ga0.5P–In0.5(Al0.3Ga0.2)P–In0.5Al0.5P quantum-dot (QD) heterostructure diode, with an auxiliary ∼20 Å InGaP quantum well (QW) coupled via an In(AlGa)P barrier (∼20 Å) to the single layer of QDs to aid carrier collection, has a steeper current–voltage characteristic than the case of a similar diode with no auxiliary QW. The p–n InP+InGaP QD+QW diode is capable of 300 K visible-spectrum QD laser operation, while the single-layer InP QD diode (single QD layer) saturates at low current (≲1 mA) and does not exhibit stimulated emission. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.Hc Quantum dots
78.67.De Quantum wells

Interpretation of photoluminescence spectra obtained for spark-processed Si

R. E. Hummel, N. Shepherd, and D. Burton

Appl. Phys. Lett. 79, 3218 (2001); http://dx.doi.org/10.1063/1.1418264 (3 pages) | Cited 2 times

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Absorption spectra obtained from spark-processed Si (sp-Si) utilizing differential reflectometry yield a series of closely spaced energy levels, as expected for amorphous materials, which reside between 1.7 and 2.8 eV. Further, a broad absorption band is observed between about 3.2 and about 6.2 eV. A HeCd laser pumps electrons from the ground state into this absorption band. The blue and green photoluminescence peaks of sp-Si are interpreted as originating from emission energy levels at 3.22 and 2.36 eV into which the electrons revert from the just mentioned absorption band by nonradiative transitions. In contrast, pumping with an argon ion laser provides only enough energy to excite the electrons from the ground state into the above mentioned, closely spaced, lower absorption bands and thus causes only a 1.9 eV (red) radiation. © 2001 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.40.Pg Disordered solids
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
81.05.Gc Amorphous semiconductors
52.77.-j Plasma applications
78.40.Fy Semiconductors

Mid-infrared photonic-crystal distributed-feedback laser with enhanced spectral purity and beam quality

W. W. Bewley, C. L. Felix, I. Vurgaftman, R. E. Bartolo, J. R. Lindle, J. R. Meyer, H. Lee, and R. U. Martinelli

Appl. Phys. Lett. 79, 3221 (2001); http://dx.doi.org/10.1063/1.1418445 (3 pages) | Cited 12 times

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We report a photonic-crystal distributed-feedback (PCDFB) laser with an antimonide type-II “W” active region. Optical lithography and dry etching were used to pattern the two-dimensional rectangular lattice with a second-order grating tilted by 20° relative to the facet normal. For pulsed optical pumping, the emission line centered on λ = 4.6–4.7 μm is considerably narrower (7–10 nm) than for Fabry-Pérot and angled-grating DFB (α-DFB) lasers fabricated from the same wafer. The PCDFB beam quality is also substantially enhanced, e.g., by a factor of 5 compared with the α-DFB at a pump-stripe width of 200 μm. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.55.Px Semiconductor lasers; laser diodes

Engineering acoustic band gaps

Yun Lai, Xiangdong Zhang, and Zhao-Qing Zhang

Appl. Phys. Lett. 79, 3224 (2001); http://dx.doi.org/10.1063/1.1415410 (3 pages) | Cited 23 times

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By using a perturbative approach, we propose a simple, systematic, and efficient method to engineer acoustic band gaps. A gap can be enlarged or reduced by altering the microstructure according to the field-energy distributions of the Bloch states at the band edges as well as their derivatives. Due to the structure of the acoustic wave equation, the engineering of acoustic band gaps is much more efficient than that of photonic band gaps. The validity of the proposed method is supported by multiple-scattering calculations. Our method makes the acoustic band gap “designable.” © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift

Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, P. W. Li, and Fred H. Pollak

Appl. Phys. Lett. 79, 3227 (2001); http://dx.doi.org/10.1063/1.1418027 (3 pages) | Cited 9 times

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An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C–1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Eric Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, and P. Gibart

Appl. Phys. Lett. 79, 3230 (2001); http://dx.doi.org/10.1063/1.1415043 (3 pages) | Cited 62 times

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The strain in GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy has been investigated. The insertion of AlN/GaN superlattices was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick (2.5 μm) GaN layer. X-ray diffraction and photoluminescence measurements are used to determine the effect of these AlN/GaN superlattices on the strain in the subsequent GaN layers. A reduction of threading dislocation density is also observed by transmission electron microscopy and atomic force microscopy when such superlattices are used. Strong band edge photoluminescence of GaN on Si(111) was observed with a full width at half maximum of the bound exciton line as low as 6 meV at 10 K. The 500 arcsec linewidth on the (002) x-ray rocking curve also attests the high crystalline quality of GaN on Si (111), when using these AlN/GaN superlattices. © 2001 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Aluminum-induced crystallization of hydrogenated amorphous germanium thin films

I. Chambouleyron, F. Fajardo, and A. R. Zanatta

Appl. Phys. Lett. 79, 3233 (2001); http://dx.doi.org/10.1063/1.1415772 (3 pages) | Cited 14 times

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Al-induced crystallization of co sputtered hydrogenated amorphous germanium films, deposited at 220 °C, onto crystalline silicon substrates is investigated by Raman and infrared spectroscopies as a function of the Al concentration (2×10−6<[Al/Ge]<2.5×10−2). Aluminum induces partial crystallization of the films for metal concentrations smaller than ∼1.3 at. %. A sort of explosive crystallization of the films occurs within a narrow Al concentration range ( ∼ 1.3<[Al/Ge]< ∼ 1.8 at. %). Raman spectra do not display any crystallization signal for metal concentrations above this narrow range. Data of the extended x-ray absorption fine structure of the coordination and of the local order around gallium, in Ga-doped a-Ge:H, are used to propose an overall picture of the microscopic mechanisms behind these results. A comparative analysis suggests that the crystallization seeds are fourfold-coordinated Al atoms sitting at the center of perfect tetrahedral Ge sites. © 2001 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.30.Am Elemental semiconductors and insulators
78.70.Dm X-ray absorption spectra

Electromigration critical length effect in Cu/oxide dual-damascene interconnects

Ki-Don Lee, Ennis T. Ogawa, Hideki Matsuhashi, Patrick R. Justison, Kil-Soo Ko, Paul S. Ho, and Volker A. Blaschke

Appl. Phys. Lett. 79, 3236 (2001); http://dx.doi.org/10.1063/1.1418034 (3 pages) | Cited 27 times

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Electromigration tests at temperatures between 340 and 400 °C and current densities between 1.0 and 3.0 MA/cm2 have been performed to determine the temperature dependence of the critical length effect in 0.5-μm-wide Cu/oxide dual-damascene interconnects with 0.1 μm silicon nitride (SiNx) passivation. A focused-ion-beam-induced contrast imaging technique is used to locate failure sites of critical length test structures. Statistical analysis [E. T. Ogawa et al., Appl. Phys. Lett. 78, 18 (2001)] yields a threshold-length product (jL)c, of 3700 A/cm, and a temperature dependence is not observed within the temperature range 340–400 °C. © 2001 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration

The nature of arsenic incorporation in GaN

A. Bell, F. A. Ponce, S. V. Novikov, C. T. Foxon, and I. Harrison

Appl. Phys. Lett. 79, 3239 (2001); http://dx.doi.org/10.1063/1.1418030 (3 pages) | Cited 3 times

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A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4×1017 to 4.2×1018 cm−3. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration. © 2001 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
73.61.Ey III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
73.50.Dn Low-field transport and mobility; piezoresistance

Atomistic evolution of Si1–x–yGexCy thin films on Si(001) surfaces

Akira Sakai, Yuji Torige, Masahisa Okada, Hiroya Ikeda, Yukio Yasuda, and Shigeaki Zaima

Appl. Phys. Lett. 79, 3242 (2001); http://dx.doi.org/10.1063/1.1418447 (3 pages) | Cited 6 times

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The initial growth process of Si1−x−yGexCy thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si1−x−yGexCy films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si1−x−yGexCy film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film. © 2001 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical and electrical properties of Al-rich AlGaN alloys

J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 79, 3245 (2001); http://dx.doi.org/10.1063/1.1418255 (3 pages) | Cited 46 times

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AlxGa1−xN alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x = 0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results. © 2001 American Institute of Physics.
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78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
72.20.Fr Low-field transport and mobility; piezoresistance

Femtosecond laser triggering of a sub-100 picosecond jitter high-voltage spark gap

B. M. Luther, L. Furfaro, A. Klix, and J. J. Rocca

Appl. Phys. Lett. 79, 3248 (2001); http://dx.doi.org/10.1063/1.1419036 (3 pages) | Cited 9 times

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We have demonstrated sub-100 ps jitter operation of a pressurized high-voltage air spark gap triggered by a femtosecond Ti:Sapphire laser. Time delay statistical fluctuations with a standard deviation as low as +−σ = 0.037 ns were obtained. © 2001 American Institute of Physics.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.75.Kq Plasma switches (e.g., spark gaps)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.62.-b Laser applications

Stable island arrays by height-constrained Stranski–Krastanov growth

J. Liang and Z. Suo

Appl. Phys. Lett. 79, 3251 (2001); http://dx.doi.org/10.1063/1.1415403 (3 pages) | Cited 3 times

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In the Stranski–Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both surface energy, and elastic energy drive the islands to coarsen: some islands enlarge and others shrink, keeping the total island volume constant. The islands produced this way are usually uneven in size and spacing. Motivated by several related studies, we suggest that stable, uniform islands should form when a stiff ceiling is placed at a small gap above the film. After contacting the ceiling, the islands are constrained to grow laterally and remain coherent with the substrate, preventing further stress relaxation. In fact, we show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. On the other hand, the total surface energy decreases as the islands coarsen. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. We estimate the equilibrium island size by analyzing an idealized model.© 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
68.35.Md Surface thermodynamics, surface energies
68.60.Bs Mechanical and acoustical properties
68.65.Hb Quantum dots (patterned in quantum wells)
62.20.D- Elasticity

Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

Joon Seop Kwak, K. Y. Lee, J. Y. Han, J. Cho, S. Chae, O. H. Nam, and Y. Park

Appl. Phys. Lett. 79, 3254 (2001); http://dx.doi.org/10.1063/1.1419053 (3 pages) | Cited 39 times

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The effect of crystal polarity on the electrical properties of Ti/Al contacts to n-GaN substrate has been investigated. The Ti/Al contacts prepared on Ga-face n-GaN substrate became ohmic with a contact resistivity of 2×10−5 Ω cm2 after annealing at temperatures higher than 600 °C for 30 s. On the contrary, the contacts on N-face n-GaN substrate exhibited nonlinear current–voltage curve and high Schottky barrier heights over 1 eV were measured at the same annealing conditions. These results could be explained by opposite piezoelectric-field at GaN/AlN heterostructure resulted from different polarity of the GaN substrate. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.05.Ea III-V semiconductors
73.40.Cg Contact resistance, contact potential
61.72.Cc Kinetics of defect formation and annealing
73.30.+y Surface double layers, Schottky barriers, and work functions

Evidence of electron-emission-enhanced nucleation of diamonds in microwave plasma-enhanced chemical vapor deposition

Kuoguang Perng, Kuo-Shung Liu, and I-Nan Lin

Appl. Phys. Lett. 79, 3257 (2001); http://dx.doi.org/10.1063/1.1419233 (3 pages)

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The bias-enhanced nucleation (BEN) of diamonds on a Si substrate, using a SiO2 mask and microwave plasma-enhanced chemical vapor deposition (MPE-CVD), was examined. Experimental results indicate that the electron-emission-enhanced nucleation mechanism proposed herein governs the nucleation of diamonds on the partially patterned SiO2/Si substrate. The variation of nucleation density on the partially patterned SiO2/Si substrate also reveals that the BEN of diamonds in the MPE-CVD process follows the proposed mechanism. © 2001 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.U- Carbon/carbon-based materials
81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
52.77.Dq Plasma-based ion implantation and deposition
85.40.Hp Lithography, masks and pattern transfer

Use of TiN(O)/Ti as an effective intermediate stress buffer and diffusion barrier for Cu/parylene-n interconnects

Kaustubh S. Gadre, T. L. Alford, and J. W. Mayer

Appl. Phys. Lett. 79, 3260 (2001); http://dx.doi.org/10.1063/1.1416156 (3 pages) | Cited 4 times

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Copper and parylene-n (Pa-n) are studied for ultralarge scale integration circuits because of their low electrical resistivity, resistance to electromigration and low dielectric constant, chemical inertness, and compatibility with current integrated circuit manufacturing, respectively. Copper diffusion observed at and above 300 °C in Pa-n correlates to an increase in the crystallinity of the α phase and subsequent transformation to the more open structure of β parylene. Titanium nitride (oxygen) [TiN(O)]/titanium (Ti) bilayers are successfully implemented as a diffusion barrier. TiN is proven to be a very good diffusion barrier up to 500 °C for copper due to its large negative heat of formation and hence its thermal stability. Incorporation of an intermediate titanium layer reduced the residual stress and thermal mismatch between Pa-n and TiN. Without the Ti layer thermal cracking of TiN occurred. The presence of the buffer layer had no detrimental effects on the overall resistivity. The effectiveness of the barrier is attributed to stuffing of the grain boundaries with oxygen and nitrogen. This results in the elimination of rapid diffusion paths. This work provides the foundation for future implementation of Cu/Pa-n for higher temperature microelectronics. © 2001 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
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Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

H. Kim, G. Glass, J. A. N. T. Soares, Y. L. Foo, P. Desjardins, and J. E. Greene

Appl. Phys. Lett. 79, 3263 (2001); http://dx.doi.org/10.1063/1.1415420 (3 pages) | Cited 1 time

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Arsenic doping at concentrations CAs ⪞1018 cm−3 during Si(001) growth from hydride precursors gives rise to strong As surface segregation, low film growth rates RSi, poor electrical activation, and surface roughening. Based upon the results of temperature-programmed desorption studies of Si(001):As surface processes during film deposition, we have investigated the use of temperature-modulated growth including periodic arsenic desorption (10 s at 1000 °C) from the surface segregated layer. Both constant-temperature and temperature-modulated Si(001):As layers were grown at Ts = 750 °C, selected as a compromise between maximizing CAs and providing a usable deposition rate, by gas-source molecular beam epitaxy from Si2H6/AsH3 mixtures. For constant-temperature growth, RSi is only 0.08 μm h−1, the fraction of electrically active dopant is 55%, and film surfaces are very rough (rms roughness 〈w〉 = 110 Å). In sharp contrast, Ts-modulated layers exhibit increases in RSi by 2.5× to 0.20 μm h−1, 100% electrical activity, and atomically smooth surfaces with 〈w〉 = 2 Å. The results are explained based upon the competition among As surface segregation, desorption, and incorporation rates. © 2001 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.35.Dv Composition, segregation; defects and impurities
68.43.Mn Adsorption kinetics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

P. M. Lenahan, T. D. Mishima, T. N. Fogarty, and R. Wilkins

Appl. Phys. Lett. 79, 3266 (2001); http://dx.doi.org/10.1063/1.1418261 (3 pages) | Cited 2 times

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We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap. © 2001 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.80.Ed γ-ray effects
85.30.De Semiconductor-device characterization, design, and modeling
76.30.Mi Color centers and other defects

Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure

N. A. Hastas, C. A. Dimitriadis, D. H. Tassis, Y. Panayiotatos, S. Logothetidis, and D. Papadimitriou

Appl. Phys. Lett. 79, 3269 (2001); http://dx.doi.org/10.1063/1.1419044 (3 pages) | Cited 3 times

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The electrical properties of thick amorphous carbon (a-C) films with sequential sp3-rich/sp2-rich layered structure, grown by magnetron sputtering on Si substrates at room temperature, were investigated. At low electric fields, the conduction is due to the variable range hopping mechanism. At high electric fields, thermally assisted band-to-band indirect tunneling is the dominant conduction mechanism, while the Arrhenius plots of the current show a deviation from straight lines in the form of continuous bending satisfying the Meyer–Nelder rule. Comparative studies of low-frequency noise in sp2-rich single layer and sp3-rich/sp2-rich layered a-C films indicate that the noise in the a-C layered originates from traps located mainly at the interfaces of the sp3-rich/sp2-rich bilayers. © 2001 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
81.05.U- Carbon/carbon-based materials
61.43.Dq Amorphous semiconductors, metals, and alloys
71.55.Cn Elemental semiconductors
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance
81.05.Cy Elemental semiconductors
72.80.Ng Disordered solids
68.55.-a Thin film structure and morphology
73.40.Gk Tunneling
72.70.+m Noise processes and phenomena
73.50.Td Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
73.20.At Surface states, band structure, electron density of states
71.55.Jv Disordered structures; amorphous and glassy solids

Auger recombination in low-band-gap n-type InGaAs

W. K. Metzger, M. W. Wanlass, R. J. Ellingson, R. K. Ahrenkiel, and J. J. Carapella

Appl. Phys. Lett. 79, 3272 (2001); http://dx.doi.org/10.1063/1.1418032 (3 pages) | Cited 11 times

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We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x = 0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3×1018–5×1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination. © 2001 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Magnetotunneling spectroscopy of an individual quantum dot in a gated tunnel diode

R. J. A. Hill, A. Patanè, P. C. Main, L. Eaves, B. Gustafson, M. Henini, S. Tarucha, and D. G. Austing

Appl. Phys. Lett. 79, 3275 (2001); http://dx.doi.org/10.1063/1.1415348 (3 pages) | Cited 9 times

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We use an array of gate electrodes to control the electrostatic profile in a layer of self-assembled InAs quantum dots. In combination with magnetotunneling spectroscopy, this allows us to identify and measure the energy levels and wave functions associated with the ground and excited state of an individual quantum dot. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

H–Si doping profile in GaAs by scanning tunneling microscopy

B. Grandidier, S. Silvestre, J. P. Nys, T. Mélin, D. Bernard, D. Stiévenard, E. Constant, and J. Chevallier

Appl. Phys. Lett. 79, 3278 (2001); http://dx.doi.org/10.1063/1.1418457 (3 pages)

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Hydrogen incorporation in n-type Si-doped GaAs layers results in the neutralization of the active dopants and a change of the conductivity along the growth direction. To characterize the active dopant concentration of doped GaAs layers containing hydrogen, we have used secondary ion mass spectroscopy and cross-sectional scanning tunneling microscopy. Spectroscopic measurements are performed as well as conductance images to visualize the variation of the conduction band-edge position. Such a variation, which is related to the concentration of Si–H complexes, allows the determination of the doping profile. © 2001 American Institute of Physics.
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61.72.S- Impurities in crystals
81.05.Ea III-V semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.55.Eq III-V semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
71.20.Nr Semiconductor compounds

Double- to single-hump shape change of secondary electron emission curve for thermal SiO2 layers

SeGi Yu, Taewon Jeong, Whikun Yi, Jeonghee Lee, Sunghwan Jin, Jungna Heo, J. M. Kimb, and D. Jeon

Appl. Phys. Lett. 79, 3281 (2001); http://dx.doi.org/10.1063/1.1419046 (3 pages) | Cited 1 time

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Secondary electron emission yields (SEEYs) were measured for silicon oxides which were thermally grown on doped silicon substrates. Generally, SEEY curves can be described by the so-called universal curve, i.e., one hump with a monotonic increase (decrease) before (after) the hump. However, we found that our thick oxide layers exhibited double-hump shaped SEEY curves instead of single-hump shaped curves. Additionally, we were able to change the shape of a SEEY curve with two humps to a curve with one hump, or vice versa, by varying the experimental parameters. This change in curve shape can be explained if we consider the competition between the oxide layer thickness and the electron’s penetration depth, the charge accumulation due to emission of secondary electrons, and charge traps created during thermal oxidation at the same time. © 2001 American Institute of Physics.
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79.20.Hx Electron impact: secondary emission
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.65.Mq Oxidation
71.55.Ht Other nonmetals

Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

Katsuhiro Uesugi and Ikuo Suemune

Appl. Phys. Lett. 79, 3284 (2001); http://dx.doi.org/10.1063/1.1418449 (3 pages) | Cited 13 times

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Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ∼15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ∼ 1×1020 cm−3. With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10−4 Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Ns Metal-nonmetal contacts
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.80.Ey III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Bias-voltage-induced asymmetry in nanoelectronic Y-branches

L. Worschech, H. Q. Xu, A. Forchel, and L. Samuelson

Appl. Phys. Lett. 79, 3287 (2001); http://dx.doi.org/10.1063/1.1419040 (3 pages) | Cited 64 times

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Pronounced asymmetries of electrical properties are observed in nanoelectronic, symmetric GaAs/AlGaAs Y-branches. Finite voltages Vl and Vr applied to the left- and right-hand side branch reservoir of a symmetric, ballistic Y-branch switching device in push–pull fashion (i.e., Vl = −Vr) lead to a negative output voltage Vs of the floating, central stem reservoir located between the two branches. We explain our observations exploiting the ballistic nature of the electron transport in the device. © 2001 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.23.Ad Ballistic transport
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