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12 Nov 2001

Volume 79, Issue 20, pp. 3215-3366

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Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics

Shriram Ramanathan, David A. Muller, Glen D. Wilk, Chang Man Park, and Paul C. McIntyre

Appl. Phys. Lett. 79, 3311 (2001); http://dx.doi.org/10.1063/1.1418266 (3 pages) | Cited 32 times

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In this letter, we report on electrical and microstructural properties of ultrathin zirconia dielectrics grown on SiO2 by ultraviolet (UV) ozone oxidation and natural oxidation (no UV light). Capacitance–voltage (C–V) measurements were performed at multiple frequencies on capacitors fabricated from a ZrO2–SiO2 stack. It was found that the C–V curves from samples grown by natural oxidation were distorted and showed severe frequency dependence while samples grown with UV light exposure under otherwise identical conditions had superior electrical behavior. Loss tangent measurements and detailed electron energy loss spectroscopy studies performed on the two samples revealed that the sample grown by natural oxidation was highly oxygen deficient, and this led to its poor electrical properties. © 2001 American Institute of Physics.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.Nq Composition and phase identification
77.22.Gm Dielectric loss and relaxation
61.66.Bi Elemental solids
61.66.Dk Alloys
81.65.Mq Oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.20.Uv Electron energy loss spectroscopy
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
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