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12 Nov 2001

Volume 79, Issue 20, pp. 3215-3366

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Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

H. Kim, G. Glass, J. A. N. T. Soares, Y. L. Foo, P. Desjardins, and J. E. Greene

Appl. Phys. Lett. 79, 3263 (2001); http://dx.doi.org/10.1063/1.1415420 (3 pages) | Cited 1 time

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Arsenic doping at concentrations CAs ⪞1018 cm−3 during Si(001) growth from hydride precursors gives rise to strong As surface segregation, low film growth rates RSi, poor electrical activation, and surface roughening. Based upon the results of temperature-programmed desorption studies of Si(001):As surface processes during film deposition, we have investigated the use of temperature-modulated growth including periodic arsenic desorption (10 s at 1000 °C) from the surface segregated layer. Both constant-temperature and temperature-modulated Si(001):As layers were grown at Ts = 750 °C, selected as a compromise between maximizing CAs and providing a usable deposition rate, by gas-source molecular beam epitaxy from Si2H6/AsH3 mixtures. For constant-temperature growth, RSi is only 0.08 μm h−1, the fraction of electrically active dopant is 55%, and film surfaces are very rough (rms roughness 〈w〉 = 110 Å). In sharp contrast, Ts-modulated layers exhibit increases in RSi by 2.5× to 0.20 μm h−1, 100% electrical activity, and atomically smooth surfaces with 〈w〉 = 2 Å. The results are explained based upon the competition among As surface segregation, desorption, and incorporation rates. © 2001 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.35.Dv Composition, segregation; defects and impurities
68.43.Mn Adsorption kinetics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

P. M. Lenahan, T. D. Mishima, T. N. Fogarty, and R. Wilkins

Appl. Phys. Lett. 79, 3266 (2001); http://dx.doi.org/10.1063/1.1418261 (3 pages) | Cited 2 times

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We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap. © 2001 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.80.Ed γ-ray effects
85.30.De Semiconductor-device characterization, design, and modeling
76.30.Mi Color centers and other defects

Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure

N. A. Hastas, C. A. Dimitriadis, D. H. Tassis, Y. Panayiotatos, S. Logothetidis, and D. Papadimitriou

Appl. Phys. Lett. 79, 3269 (2001); http://dx.doi.org/10.1063/1.1419044 (3 pages) | Cited 3 times

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The electrical properties of thick amorphous carbon (a-C) films with sequential sp3-rich/sp2-rich layered structure, grown by magnetron sputtering on Si substrates at room temperature, were investigated. At low electric fields, the conduction is due to the variable range hopping mechanism. At high electric fields, thermally assisted band-to-band indirect tunneling is the dominant conduction mechanism, while the Arrhenius plots of the current show a deviation from straight lines in the form of continuous bending satisfying the Meyer–Nelder rule. Comparative studies of low-frequency noise in sp2-rich single layer and sp3-rich/sp2-rich layered a-C films indicate that the noise in the a-C layered originates from traps located mainly at the interfaces of the sp3-rich/sp2-rich bilayers. © 2001 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
81.05.U- Carbon/carbon-based materials
61.43.Dq Amorphous semiconductors, metals, and alloys
71.55.Cn Elemental semiconductors
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance
81.05.Cy Elemental semiconductors
72.80.Ng Disordered solids
68.55.-a Thin film structure and morphology
73.40.Gk Tunneling
72.70.+m Noise processes and phenomena
73.50.Td Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
73.20.At Surface states, band structure, electron density of states
71.55.Jv Disordered structures; amorphous and glassy solids

Auger recombination in low-band-gap n-type InGaAs

W. K. Metzger, M. W. Wanlass, R. J. Ellingson, R. K. Ahrenkiel, and J. J. Carapella

Appl. Phys. Lett. 79, 3272 (2001); http://dx.doi.org/10.1063/1.1418032 (3 pages) | Cited 11 times

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We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x = 0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3×1018–5×1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination. © 2001 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Magnetotunneling spectroscopy of an individual quantum dot in a gated tunnel diode

R. J. A. Hill, A. Patanè, P. C. Main, L. Eaves, B. Gustafson, M. Henini, S. Tarucha, and D. G. Austing

Appl. Phys. Lett. 79, 3275 (2001); http://dx.doi.org/10.1063/1.1415348 (3 pages) | Cited 9 times

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We use an array of gate electrodes to control the electrostatic profile in a layer of self-assembled InAs quantum dots. In combination with magnetotunneling spectroscopy, this allows us to identify and measure the energy levels and wave functions associated with the ground and excited state of an individual quantum dot. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

H–Si doping profile in GaAs by scanning tunneling microscopy

B. Grandidier, S. Silvestre, J. P. Nys, T. Mélin, D. Bernard, D. Stiévenard, E. Constant, and J. Chevallier

Appl. Phys. Lett. 79, 3278 (2001); http://dx.doi.org/10.1063/1.1418457 (3 pages)

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Hydrogen incorporation in n-type Si-doped GaAs layers results in the neutralization of the active dopants and a change of the conductivity along the growth direction. To characterize the active dopant concentration of doped GaAs layers containing hydrogen, we have used secondary ion mass spectroscopy and cross-sectional scanning tunneling microscopy. Spectroscopic measurements are performed as well as conductance images to visualize the variation of the conduction band-edge position. Such a variation, which is related to the concentration of Si–H complexes, allows the determination of the doping profile. © 2001 American Institute of Physics.
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61.72.S- Impurities in crystals
81.05.Ea III-V semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.55.Eq III-V semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
71.20.Nr Semiconductor compounds

Double- to single-hump shape change of secondary electron emission curve for thermal SiO2 layers

SeGi Yu, Taewon Jeong, Whikun Yi, Jeonghee Lee, Sunghwan Jin, Jungna Heo, J. M. Kimb, and D. Jeon

Appl. Phys. Lett. 79, 3281 (2001); http://dx.doi.org/10.1063/1.1419046 (3 pages) | Cited 1 time

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Secondary electron emission yields (SEEYs) were measured for silicon oxides which were thermally grown on doped silicon substrates. Generally, SEEY curves can be described by the so-called universal curve, i.e., one hump with a monotonic increase (decrease) before (after) the hump. However, we found that our thick oxide layers exhibited double-hump shaped SEEY curves instead of single-hump shaped curves. Additionally, we were able to change the shape of a SEEY curve with two humps to a curve with one hump, or vice versa, by varying the experimental parameters. This change in curve shape can be explained if we consider the competition between the oxide layer thickness and the electron’s penetration depth, the charge accumulation due to emission of secondary electrons, and charge traps created during thermal oxidation at the same time. © 2001 American Institute of Physics.
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79.20.Hx Electron impact: secondary emission
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.65.Mq Oxidation
71.55.Ht Other nonmetals

Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

Katsuhiro Uesugi and Ikuo Suemune

Appl. Phys. Lett. 79, 3284 (2001); http://dx.doi.org/10.1063/1.1418449 (3 pages) | Cited 13 times

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Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ∼15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ∼ 1×1020 cm−3. With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10−4 Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Ns Metal-nonmetal contacts
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.80.Ey III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Bias-voltage-induced asymmetry in nanoelectronic Y-branches

L. Worschech, H. Q. Xu, A. Forchel, and L. Samuelson

Appl. Phys. Lett. 79, 3287 (2001); http://dx.doi.org/10.1063/1.1419040 (3 pages) | Cited 65 times

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Pronounced asymmetries of electrical properties are observed in nanoelectronic, symmetric GaAs/AlGaAs Y-branches. Finite voltages Vl and Vr applied to the left- and right-hand side branch reservoir of a symmetric, ballistic Y-branch switching device in push–pull fashion (i.e., Vl = −Vr) lead to a negative output voltage Vs of the floating, central stem reservoir located between the two branches. We explain our observations exploiting the ballistic nature of the electron transport in the device. © 2001 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.23.Ad Ballistic transport
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