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Applied Physics Letters / Volume 79 / Issue 22 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 79, 3588 (2001); http://dx.doi.org/10.1063/1.1396322 (3 pages)

A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

A. M. Sanchez1, G. Nouet1, P. Ruterana1, F. J. Pacheco2, S. I. Molina2, and R. Garcia2

1ESCTM-CRISMAT UMR 6508 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 CAEN Cedex, France
2Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Universidad de Cadiz, 11510 Puerto Real, cadiz, Spain

(Received 28 February 2001; accepted 29 June 2001)

Atomic structure investigation has been carried out on inversion domain boundaries in GaN layer grown on Si(111) by molecular-beam epitaxy. The comparison of the stacking sequences between simulated and experimental high resolution electron microscopy images shows the existence of two different atomic configurations for the inversion domain boundaries: the Holt model coexists with the V model inside the same layers. A mechanism allowing the switch from one model to the other by the interaction with the I1 stacking fault is proposed. © 2001 American Institute of Physics.

© 2001 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor epitaxial layers, domain boundaries, stacking faults, crystal structure, transmission electron microscopy

PACS

  • 68.55.-a

    Thin film structure and morphology

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 61.72.Nn

    Stacking faults and other planar or extended defects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1396322

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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