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26 Nov 2001

Volume 79, Issue 22, pp. 3561-3731

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Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices

A. P. Zhang, B. Luo, J. W. Johnson, F. Ren, J. Han, and S. J. Pearton

Appl. Phys. Lett. 79, 3636 (2001); http://dx.doi.org/10.1063/1.1423387 (3 pages) | Cited 18 times

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The effects of the initial Mg reactivation annealing temperature, surface cleaning treatments, and contact annealing conditions on the specific contact resistance of Ni/Au ohmic contacts on p-GaN are reported. The lowest contact resistances were obtained for 900 °C activation annealing and cleaning steps that reduced the native oxide thickness (i.e., KOH rinsing). Removal of this interfacial oxide reduced the barrier for hole transport, providing a contact resistance of 9×10−4 Ω cm2 for Ni/Au metallization annealed at 500 °C. The use of a ten period p-Al0.1Ga0.9N(Mg)/GaN(Mg) superlattice with individual layer thickness 50 Å led to a specific contact resistance of 9×10−5 Ω cm2 under the same conditions. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.63.-b Electronic transport in nanoscale materials and structures
73.40.Cg Contact resistance, contact potential
81.65.Cf Surface cleaning, etching, patterning

Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass

Richard A. Soref and Gregory Sun

Appl. Phys. Lett. 79, 3639 (2001); http://dx.doi.org/10.1063/1.1421079 (3 pages) | Cited 10 times

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Modeling and design studies show that a strain-balanced Si1−xGex/Si superlattice on Si1−yGey-buffered Si can be engineered to give an inverted effective mass HH2 subband adjacent to HH1, thereby enabling a 77 K edge-emitting electrically pumped p–i–p quantum staircase laser for THz emission at energies below the 37 meV Ge–Ge optical phonon energy. Analysis of hole-phonon scattering, lifetimes, matrix elements, and hole populations indicates that a gain of 450 cm−1 will be feasible at f = 7.3 THz during 1.7 kA/cm2 current injection. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.20.At Surface states, band structure, electron density of states
71.38.-k Polarons and electron-phonon interactions

Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1−xN (0.38 ⩽ x<1)

Makoto Kasu and Naoki Kobayashi

Appl. Phys. Lett. 79, 3642 (2001); http://dx.doi.org/10.1063/1.1421223 (3 pages) | Cited 16 times

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From a linear relation between the applied bias and the anode–sample distance, the electric field necessary for field emission (FE) can be obtained reproducibly. For heavily Si-doped AlN and AlxGa1−xN (0.38 ⩽ x<1), the band gap (Al-mole fraction, x), Si-dopant density (NSi), and thickness dependences of the field emission are investigated. After optimizing the sample structure, we obtained a FE current density of 0.22 A/cm2 with a 0.3-mm-diameter rod anode from 0.8-μm-thick Si-doped (NSi:1×1021 cm−3) AlN. © 2001 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds
61.72.uj III-V and II-VI semiconductors
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