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3 Dec 2001

Volume 79, Issue 23, pp. 3749-3889

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Electro-optic and electromechanical properties of poled polymer thin films

Wei Shi, Yujie J. Ding, Xiaodong Mu, Xin Yin, and Changshui Fang

Appl. Phys. Lett. 79, 3749 (2001); http://dx.doi.org/10.1063/1.1418448 (3 pages) | Cited 8 times

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A simple interferometric technique has been developed to sequentially measure the piezoelectric and electro-optic (EO) coefficient of the poled polymer films. This technique, similar to the Michelson interferometer, is based on compensating the change of the optical path due to the piezoelectric and electric-optic effect of the poled polymer films by opposite piezoelectric effect of a quartz crystal. Our technique has advantages of simplicity, high sensitivity, and improved accuracies over the previous ones. The experimental values of the EO coefficients agree with the values predicted by the two-level model. © 2001 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
78.66.Qn Polymers; organic compounds
77.55.-g Dielectric thin films
77.84.Jd Polymers; organic compounds
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
78.20.Jq Electro-optical effects

1.5 kW high-peak-power vacuum ultraviolet flash lamp using a pulsed silent discharge of krypton gas

J. Kawanaka, T. Shirai, S. Kubodera, and W. Sasaki

Appl. Phys. Lett. 79, 3752 (2001); http://dx.doi.org/10.1063/1.1421419 (3 pages) | Cited 2 times

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A 1.5 kW high-peak-power discharge lamp with short emission duration of 140 ns has been developed in the vacuum ultraviolet spectral region. Our numerical calculation ensured that the peak emission at 147 nm was due to singlet excimers (1Σ), which were mainly produced via electron-collisional mixing of triplet excimers (3Σ). © 2001 American Institute of Physics.
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42.72.Bj Visible and ultraviolet sources

Recording of transmission phase gratings in glass by ion implantation

I. Bányász, M. Fried, Cs. Dücsö, and Z. Vértesy

Appl. Phys. Lett. 79, 3755 (2001); http://dx.doi.org/10.1063/1.1424468 (3 pages) | Cited 7 times

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Transmission phase gratings of grating constants of 4–12 μm have been designed and fabricated in glass via implantation of helium and nitrogen ions of energies in the 500 keV–1.6 MeV range, through photoresist masks of thickness of 3.3 μm. Multienergy implantations were applied, too. Phase profiles of the gratings were measured via interference and phase contrast microscopy and scanning electron microscopy. Quasisinusoidal profiles were obtained for the finest gratings. The highest first order diffraction efficiencies were around 20%. Dependence of the efficiencies of the gratings on the energy and dose of the implantation have been determined. © 2001 American Institute of Physics.
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42.79.Dj Gratings
42.70.Ce Glasses, quartz
61.43.Fs Glasses
42.86.+b Optical workshop techniques
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Parametric fluorescence in oxidized aluminum gallium arsenide waveguides

A. De Rossi, V. Berger, M. Calligaro, G. Leo, V. Ortiz, and X. Marcadet

Appl. Phys. Lett. 79, 3758 (2001); http://dx.doi.org/10.1063/1.1424063 (3 pages) | Cited 19 times

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Parametric fluorescence in low-loss oxidized aluminum gallium arsenide heterostructure waveguides is quantitatively analyzed. A parametric fluorescence efficiency as high as 6×10−7 W/W has been measured in a 3.2-mm-long waveguide. This corresponds to a normalized conversion efficiency, scaled with the waveguide length, of about 1000% cm−2 W−1, eight times higher than with LiNbO3 waveguides. This opens the perspective of a microoptical parametric oscillation threshold below 100 mW. © 2001 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
42.65.Yj Optical parametric oscillators and amplifiers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.55.Cr III-V semiconductors
42.82.Et Waveguides, couplers, and arrays

Role of femtosecond pulses in distinguishing third- and fifth-order nonlinearity for semiconductor-doped glasses

K. S. Bindra and A. K. Kar

Appl. Phys. Lett. 79, 3761 (2001); http://dx.doi.org/10.1063/1.1424462 (3 pages) | Cited 19 times

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We report Z-scan experiments at a frequency below the band gap of semiconductor-doped glasses using 100 fs laser pulses. A large contribution from the positive third-order nonlinearity is observed in complete contrast with the picosecond z-scan experiments. The third- and fifth-order nonlinearity for semiconductor-doped glasses can be estimated from z-scans for ps and fs pulses. © 2001 American Institute of Physics.
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42.70.Ce Glasses, quartz
42.65.An Optical susceptibility, hyperpolarizability
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.47.-p Spectroscopy of solid state dynamics
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