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17 Dec 2001

Volume 79, Issue 25, pp. 4073-4251

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Direct observation of Fermi-level pinning in Cs-doped CuPc film

Li Yan, N. J. Watkins, S. Zorba, Yongli Gao, and C. W. Tang

Appl. Phys. Lett. 79, 4148 (2001); http://dx.doi.org/10.1063/1.1426260 (3 pages) | Cited 53 times

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The electronic structures of pristine and Cs-doped CuPc films are investigated using photoemission spectroscopy and inverse photoemission spectroscopy (IPES). The lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital can be directly observed by IPES and ultraviolet photoemission spectroscopy simultaneously. We found that the Fermi-level position in organic film can be modified by Cs doping. The observed onset of the LUMO of the CuPc film is shifted by Cs doping to less than 0.2 eV above the Fermi level. The result indicates that the energy alignment and charge injection properties of the organic materials can be modified by a simple doping process. © 2001 American Institute of Physics.
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71.20.Rv Polymers and organic compounds
73.61.Ph Polymers; organic compounds
79.60.Dp Adsorbed layers and thin films
71.55.Ht Other nonmetals
78.70.-g Interactions of particles and radiation with matter

Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

Kenji Momose, Hiroo Yonezu, Yasuhiro Fujimoto, Yuzo Furukawa, Yoshifumi Motomura, and Kunio Aiki

Appl. Phys. Lett. 79, 4151 (2001); http://dx.doi.org/10.1063/1.1425451 (3 pages) | Cited 23 times

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We proposed a Si/III–V–N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1−xNx/Si (x = 2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1−xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates. © 2001 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Bt Optoelectronic device characterization, design, and modeling
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.Ac Multilayers

Space-charge-limited currents in materials with Gaussian energy distributions of localized states

V. I. Arkhipov, P. Heremans, E. V. Emelianova, and G. J. Adriaenssens

Appl. Phys. Lett. 79, 4154 (2001); http://dx.doi.org/10.1063/1.1424046 (3 pages) | Cited 24 times

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A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density. © 2001 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
71.55.Jv Disordered structures; amorphous and glassy solids
71.20.Rv Polymers and organic compounds
73.50.Fq High-field and nonlinear effects

Thermoelectric power of nitrogen-incorporated tetrahedral amorphous-carbon films

Somnath Bhattacharyya, F. Richter, U. Starke, H. Griessmann, and A. Heinrich

Appl. Phys. Lett. 79, 4157 (2001); http://dx.doi.org/10.1063/1.1426696 (3 pages) | Cited 2 times

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Tetrahedral amorphous-carbon (ta-C) films were deposited using a filtered cathodic vacuum arc in which nitrogen was incorporated up to an atomic fraction (fN) of 30%. Electrical conductivity and specially thermoelectric power (S) have been performed over a wide range of temperature. The room-temperature conductivity of these samples initially increases with fN up to several orders of magnitude compared to that of ta-C, followed by no dramatic change at higher nitrogen concentration. The sign of the S is negative in the samples with fN below ∼17%, then changes to a positive value with a higher fN. From thermal annealing of the nitrogenated samples a change of the sign of S and its dependence on fN has been analyzed. The small values of both room-temperature S and small variation of conductivity at high fN in all the samples suggest that electrical properties of these films are controlled by compensation of defects. © 2001 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
61.43.Dq Amorphous semiconductors, metals, and alloys
73.50.Lw Thermoelectric effects
71.55.Jv Disordered structures; amorphous and glassy solids
81.05.U- Carbon/carbon-based materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Simultaneous determination of Poisson ratio, bulk lattice constant, and composition of ternary compounds: In0.3Ga0.7As, In0.3Al0.7As, In0.7Ga0.3P, and In0.7Al0.3P

W. E. Hoke, T. D. Kennedy, and A. Torabi

Appl. Phys. Lett. 79, 4160 (2001); http://dx.doi.org/10.1063/1.1425954 (3 pages) | Cited 4 times

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A technique using the common (004) x-ray diffraction spectrum is demonstrated for the simultaneous determination of Poisson ratio, bulk lattice constant, and alloy composition for ternary compounds with lattice constants near the midpoint between GaAs and InP. Thin, strained layers of InGaAs, InAlAs, InGaP, and InAlP were grown. By careful choice of ternary composition and thickness, the same composition was grown on both GaAs and InP substrates without measurable relaxation in the (004) x-ray spectrum. The diffraction equation was simultaneously solved for the Poisson ratio and bulk lattice constant of the ternary compound. Subsequently the ternary composition was determined by applying Vegard’s law. The resulting Poisson ratios agreed well with the compositional averages of the binary endpoints. By extrapolating the results for InAlAs, a Poisson ratio of 0.33 was determined for AlAs. © 2001 American Institute of Physics.
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62.20.D- Elasticity
61.66.Fn Inorganic compounds
81.40.Jj Elasticity and anelasticity, stress-strain relations

On the stability of organic field-effect transistor materials

Jan Hendrik Schön

Appl. Phys. Lett. 79, 4163 (2001); http://dx.doi.org/10.1063/1.1421230 (2 pages) | Cited 7 times

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Stability and degradation of transistor performance of devices based on pentacene and α-sexithiophene are investigated. In order to distinguish between effects at grain boundaries and material issues, macroscopic bicrystals were used, where transistors were prepared on a single grain as well as across a single grain boundary. The main reason for performance instabilities is the formation of oxygen-related trapping states at the grain boundary upon exposure to air. However, especially in the case of pentacene, stable hole transport properties are observed. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
61.72.Mm Grain and twin boundaries
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance

Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds

Q. Shen, L. Chen, T. Goto, T. Hirai, J. Yang, G. P. Meisner, and C. Uher

Appl. Phys. Lett. 79, 4165 (2001); http://dx.doi.org/10.1063/1.1425459 (3 pages) | Cited 96 times

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We report on the effects of partial substitution of nickel by palladium on the thermoelectric properties of ZrNiSn-based half-Heusler compounds. It is shown that the substitution of palladium for nickel results in a significant, beneficial reduction of the thermal conductivity. The Seebeck coefficient also decreases, but only by a small amount. In the Hf0.5Zr0.5Ni0.8Pd0.2Sn0.99Sb0.01 compound, a power factor of 22.1 μW K−2 cm−1 and a thermal conductivity as low as 4.5 W/m K are measured at room temperature. The dimensionless figure of merit ZT increases with increasing temperature and reaches a maximum value of 0.7 at about 800 K. © 2001 American Institute of Physics.
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72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
72.15.Jf Thermoelectric and thermomagnetic effects

Composition dependence of the energy gap of Zn1−x−yMgxBeySe quaternary alloys nearly lattice matched to GaAs

K. Godo, H. Makino, M. W. Cho, J. H. Chang, Y. Yamazaki, T. Yao, M. Y. Shen, and T. Goto

Appl. Phys. Lett. 79, 4168 (2001); http://dx.doi.org/10.1063/1.1424064 (3 pages) | Cited 4 times

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The composition dependence of the energy gap (Eg) of Zn1−x−yMgxBeySe quaternary alloys grown by molecular-beam epitaxy was investigated. The energy gap of Zn1−x−yMgxBeySe can be controlled in a range of 2.7 eV<Eg<3 eV under nearly lattice-matching conditions to GaAs(001). The phenomenological formula for the energy gap of ZnMgBeSe quarterly is obtained using the bowing parameters theoretically or experimentally estimated for the ternary compounds. These results show that nonlinear behavior was observed on the composition dependence of the energy gap as the Be and Mg compositions increased. © 2001 American Institute of Physics.
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71.20.Nr Semiconductor compounds
68.55.Nq Composition and phase identification
81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices

Kuei-Shu Chang-Liao and Ching-Sang Chuang

Appl. Phys. Lett. 79, 4171 (2001); http://dx.doi.org/10.1063/1.1427132 (3 pages)

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The effects of arsenic concentration profiles in gate oxides on the electrical properties of metal–oxide–silicon (MOS) capacitors were investigated. It is found that arsenic in the bulk of gate oxide degrades the electric property of MOS devices, which could be due to the electron traps introduced by arsenic. Interestingly, the electric properties of MOS devices can be improved by an increase in the arsenic concentration at the SiO2/Si interface. This improvement may be attributed to the interfacial strain relaxation and/or the replacement of nonbridging bonds. The arsenic concentration profile in gate oxide plays a crucial role for the electric properties of MOS devices. © 2001 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.S- Impurities in crystals
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Nonlinear effects in YBa2Cu3O7−x microstrip resonators on sapphire

A. G. Zaitsev, R. Schneider, G. Linker, F. Ratzel, R. Smithey, and J. Geerk

Appl. Phys. Lett. 79, 4174 (2001); http://dx.doi.org/10.1063/1.1425460 (3 pages) | Cited 13 times

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Power-induced nonlinear effects, i.e., the reduction of the quality factor, the distortion of the resonance peaks, and the two-tone intermodulation distortion (IMD), were experimentally examined by using 2.3 GHz microstrip resonators prepared from double-sided YBa2Cu3O7−x (YBCO) films on CeO2-buffered sapphire. The resonators exhibited advanced performance with an unloaded quality factor of 80 000 at 63 K up to a circulating power Pcirc of 0.5 W and an IMD third-order interception point estimated at Pcirc ≈ 400 W. We found that the nonlinear effects in these resonators were produced by the power-dependent surface resistance Rs of the YBCO films, whereas the variation of the surface reactance was negligible. Both the presence of the high-order IMD products and the dependence of their amplitude on the microwave power, indicate a Rs(H)∝cosh H relationship, where H is the amplitude of the microwave magnetic field at the film surface. Such a dependence agrees with the direct measurements of the power handling capability. © 2001 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
85.25.Am Superconducting device characterization, design, and modeling
74.72.-h Cuprate superconductors
84.40.Az Waveguides, transmission lines, striplines

Oxygen-plasma effects of a La0.7Ca0.3MnO3−δ single crystal

H. S. Kim, C. H. Lee, Cheol Eui Lee, K. M. Kim, S. J. Noh, C. S. Hong, N. H. Hur, S. Y. Shim, and H.-C. Ri

Appl. Phys. Lett. 79, 4177 (2001); http://dx.doi.org/10.1063/1.1425085 (3 pages) | Cited 3 times

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A La0.7Ca0.3MnO3−δ single crystal was oxygen-plasma treated at 200 °C. Our electrical and magnetic measurements indicate that the oxygen-plasma treatment can be an effective low temperature method of oxygen stoichiometry modification of colossal magnetoresistance manganites. The oxygen plasma is also shown to introduce structural defects, whose effects are prominent near the Curie temperature (Tc), giving rise to anomalies in the resistivity and magnetic behaviors. © 2001 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
61.66.Bi Elemental solids
61.66.Dk Alloys
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
52.77.-j Plasma applications
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.15.Gd Galvanomagnetic and other magnetotransport effects

High-quality MgB2 films on boron crystals with onset Tc of 41.7 K

N. Hur, P. A. Sharma, S. Guha, Marta Z. Cieplak, D. J. Werder, Y. Horibe, C. H. Chen, and S.-W. Cheong

Appl. Phys. Lett. 79, 4180 (2001); http://dx.doi.org/10.1063/1.1427157 (3 pages) | Cited 21 times

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The simple binary compound, MgB2, has created enormous excitement, due to its remarkably high Tc (39 K), its exotic electronic and phononic structure, as well as its potential technological application. However, contrary to the initial expectation, worldwide efforts to enhance the Tc of this material by means of chemical doping and applying hydrostatic pressure have failed. Investigations of other diborides or related materials have also resulted in finding of lower Tcs. In this letter we report a slight, but significant enhancement of Tc in MgB2 films grown on boron crystals, which may stem from tensile-type strain. This finding opens up a new possibility for further optimizing Tc in MgB2 and perhaps in related materials. © 2001 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.10.+v Occurrence, potential candidates
68.60.Bs Mechanical and acoustical properties
62.20.-x Mechanical properties of solids

Spin-glass behavior with short-range antiferromagnetic order in Nd2AgIn3

D. X. Li, S. Nimori, Y. Shiokawa, A. Tobo, H. Onodera, Y. Haga, E. Yamamoto, and Y. Ōnuki

Appl. Phys. Lett. 79, 4183 (2001); http://dx.doi.org/10.1063/1.1428114 (3 pages) | Cited 7 times

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We present experimental results of complex susceptibility, static magnetization, magnetic relaxation, specific heat, and electrical resistivity measurements on an intermetallic compound Nd2AgIn3. The results indicated that Nd2AgIn3 undergoes a spin-glass transition at a freezing temperature Tf = 12.6 K accompanied with the formation of short-range antiferromagnetic order. The mechanism of formation of spin-glass state in Nd2AgIn3 is different from that in diluted metallic spin-glass or uranium intermetallic compound. The existences of frustrated moments due to the triangles of nearest neighbors in Nd atomic layers and randomly distributed Ruderman–Kittle–Kasuya–Yosida interactions may be responsible for the spin glass state formed in Nd2AgIn3. © 2001 American Institute of Physics.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Lk Spin glasses and other random magnets
75.50.Ee Antiferromagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Et Exchange and superexchange interactions
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)

Synthesis of superconducting Mg/MgB2 composites

David C. Dunand

Appl. Phys. Lett. 79, 4186 (2001); http://dx.doi.org/10.1063/1.1427439 (3 pages) | Cited 8 times

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Composites consisting of Mg and MgB2 phases were fabricated by liquid-metal infiltration following two routes. First, a preform of MgB2 powders was pressure infiltrated at 800 °C with liquid Mg, which was subsequently solidified. Second, a preform of B powders was pressure infiltrated with liquid Mg at 700 °C, resulting in partial, in situ formation of the MgB2 phase. Subsequent annealing at 950 °C increased the content of MgB2 through reaction between B and Mg. All composites exhibited a pore-free structure with no significant additional phases and were superconducting near 39 K. © 2001 American Institute of Physics.
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74.72.-h Cuprate superconductors
81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.Sv Critical currents

Characteristics of interface-engineered Josephson junctions using a YbBa2Cu3Oy counterelectrode layer

H. Katsuno, S. Inoue, T. Nagano, and J. Yoshida

Appl. Phys. Lett. 79, 4189 (2001); http://dx.doi.org/10.1063/1.1428115 (3 pages) | Cited 21 times

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We have fabricated interface-engineered junctions with YbBa2Cu3Oy as the counterelectrode. The junctions fabricated on YBa2Cu3Oy base electrodes exhibited excellent Josephson characteristics with the 1σ-spread in Ic as low as 5.4% for 16 junctions with an average Ic of around 1 mA. We also confirmed that the 1σ in Ic correlates with the surface morphology of the base-electrode layer, indicating that further improvements in 1σ would be possible by advancing the thin-film growth technology. © 2001 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.72.-h Cuprate superconductors
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Hafnium interdiffusion studies from hafnium silicate into silicon

M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, and L. Colombo

Appl. Phys. Lett. 79, 4192 (2001); http://dx.doi.org/10.1063/1.1425466 (3 pages) | Cited 45 times

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The interdiffusion of Hf and Si from high-κ gate dielectric candidate (HfO2)1−x(SiO2)x thin films deposited on Si (100) was studied using x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, high resolution transmission electron microscopy, and Rutherford backscattering spectrometry in combination with chemical etching. After extreme rapid and conventional furnace thermal annealing treatments, Hf incorporation into Si is limited to less than 0.5–1 nm from the interface. Implications for high-κ gate dielectric applications are also discussed. © 2001 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
77.55.-g Dielectric thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing
81.65.Cf Surface cleaning, etching, patterning
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
82.80.Rt Time of flight mass spectrometry

Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

David A. Muller and Glen D. Wilk

Appl. Phys. Lett. 79, 4195 (2001); http://dx.doi.org/10.1063/1.1426268 (3 pages) | Cited 35 times

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We have examined the interfaces in Zr-silicate gate dielectrics grown on Si substrates using electron energy loss spectroscopy. The Zr-silicate interface is found to be stable with the Si substrate and the polycrystalline silicon (poly-Si) electrode under annealing to 1050 °C. At this interface, a 0.35 nm wide Zr-free interface region is observed in the as-deposited film, and does not change on annealing. The Zr-free region is too thin to take on the bulk SiO2 electronic structure, and thus is unlikely to compromise the dielectric properties of the device. For films with an Al electrode, a 2 nm reaction layer forms at the Zr-silicate interface. © 2001 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
79.20.Uv Electron energy loss spectroscopy
68.35.Fx Diffusion; interface formation

Electrical fracture toughness for electrically conductive deep notches driven by electric fields in depoled lead zirconate titanate ceramics

Tianhong Wang and Tong-Yi Zhang

Appl. Phys. Lett. 79, 4198 (2001); http://dx.doi.org/10.1063/1.1427437 (3 pages) | Cited 18 times

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This study demonstrates that electric fields can fracture depoled lead zirconate titanate ceramics and that the concepts of fracture mechanics can be used to measure the electrical fracture toughness. The electrical fracture toughness (GCE = 263±35 N/m) is about nine times higher than the mechanical fracture toughness (GICM = 30.4±3.9 N/m). The highly electrical fracture toughness arises from the greater energy dissipation around the conductive sharp notch tip under purely electric loading, which is impossible under mechanical loading in brittle depoled ceramics. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Jp Dielectric breakdown and space-charge effects
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials

Effect of aluminum substitution in La3Ga5SiO14 crystals on their structure and piezoelectricity

Hiroaki Takeda, Makoto Kumatoriya, and Tadashi Shiosaki

Appl. Phys. Lett. 79, 4201 (2001); http://dx.doi.org/10.1063/1.1426274 (3 pages) | Cited 10 times

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We report La3Ga5−xAlxSiO14 (0 ⩽ x ⩽ 1) crystals, with a Ca3Ga2Ge4O14-type structure, suitable for piezoelectric application. A single-crystal x-ray structure analysis reveals that Al atoms are distributed in all cation sites except for the decahedral one occupied by La, by rather favoring the smallest tetrahedral one. The piezoelectric modulus ∣d11∣ increased ∼1.3% and d14 decreased ∼7.7% with the increasing Al content, x, up to 1.0. We discuss the possible correlation between the atomic displacement and the observed compositional dependence of the piezoelectric modulus ∣d11∣ by referring to other isomorphs. The optimal solid-solution compositions and the use of Al substitution for obtaining the maximum electromechanical coupling factors (k12, k25, and k26) are advanced. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.66.Fn Inorganic compounds
77.65.Bn Piezoelectric and electrostrictive constants

Preparation of antiferroelectric PbZrxTi1−xO3 thin films on LaSrMnO3-coated steel substrates

R. Seveno, H. W. Gundel, and S. Seifert

Appl. Phys. Lett. 79, 4204 (2001); http://dx.doi.org/10.1063/1.1426695 (3 pages) | Cited 23 times

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Antiferroelectric lead zirconate titanate (PZT) thin films have been prepared by chemical solution deposition using oxide powders. The films were processed onto steel substrates coated with a conducting oxide layer of LaSrMnO3. Homogeneous and uniform films up to 3.4 μm thick and with polarization saturation values up to 35 μC/cm2 have been obtained. The compositional transition from the ferroelectric to the antiferroelectric phase at the high zirconium side of the PZT phase diagram was studied by x-ray diffraction and hysteresis loop measurements as a function of the Zr/Ti ratio. Film thickness and annealing temperature dependencies are reported. © 2001 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
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Self-assembled patterns of iron oxide nanoparticles by hydrothermal chemical-vapor deposition

Zhengjun Zhang, B. Q. Wei, and P. M. Ajayan

Appl. Phys. Lett. 79, 4207 (2001); http://dx.doi.org/10.1063/1.1426256 (3 pages) | Cited 21 times

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Here, we report a hydrothermal chemical-vapor deposition process, which produces self-assembled patterns of iron oxide nanoparticles. By exposing a planar silica substrate to a prevaporized mixture of water, ferrocene [Fe(C5H5)2] and xylene (C8H10), at temperatures of ∼1000 °C, Fe2O3 nanoparticles are deposited on the substrate surface, in regular circular patterns. The particle sizes are less than 100 nm, and are organized into submicron-size patterns. The same process without water produces arrays of carbon nanotubes catalyzed by iron nanoparticles that are formed by the decomposition of ferrocene molecules. © 2001 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
75.50.Tt Fine-particle systems; nanocrystalline materials
81.16.Dn Self-assembly
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Hv Other nonmetallic inorganics
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.16.Hc Catalytic methods

Imaging the interlayer interactions of multiwall carbon nanotubes using scanning tunneling microscopy and spectroscopy

A. Hassanien, A. Mrzel, M. Tokumoto, and D. Tománek

Appl. Phys. Lett. 79, 4210 (2001); http://dx.doi.org/10.1063/1.1427743 (3 pages) | Cited 6 times

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Using atomically-resolved scanning tunneling microscopy and spectroscopy, we probe the nature of interwall interactions within multiwall carbon nanotubes at room temperature. We find that, at low bias voltages, the tunnel current depends strongly on the atomic position, introducing visibility differences between adjacent lattice sites. Since all atoms are equally visible in analogous measurements on single-wall nanotubes, we conclude that these modulations are introduced by the interwall interactions and provide unique information about the stacking nature. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
73.22.Dj Single particle states

Structural deformation of single-walled carbon nanotubes and fullerene encapsulation due to magnetized-plasma ion irradiation

G.-H. Jeong, R. Hatakeyama, T. Hirata, K. Tohji, K. Motomiya, N. Sato, and Y. Kawazoe

Appl. Phys. Lett. 79, 4213 (2001); http://dx.doi.org/10.1063/1.1427744 (3 pages) | Cited 19 times

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Positive and negative bias-voltages are applied to single-walled carbon nanotubes (SWNTs) in magnetized alkali–metal and alkali–fullerene plasmas. When accelerated ions are irradiated to the SWNTs through plasma sheaths, drastic structural deformations such as deflection and tube cutting of the SWNTs are observed to take place. Furthermore, this phenomenon is found to be accompanied by the fullerene encapsulation inside the SWNTs in the case of the positive-bias application in the alkali–fullerene plasma, giving the possibility that various kinds of atoms and molecules can effectively be intercalated by our plasma method. © 2001 American Institute of Physics.
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81.07.De Nanotubes
61.82.Rx Nanocrystalline materials
61.46.-w Structure of nanoscale materials
62.25.-g Mechanical properties of nanoscale systems
52.77.-j Plasma applications
61.80.Jh Ion radiation effects

Quantum dots in suspended single-wall carbon nanotubes

Jesper Nygård and David H. Cobden

Appl. Phys. Lett. 79, 4216 (2001); http://dx.doi.org/10.1063/1.1428117 (3 pages) | Cited 45 times

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We present a simple technique which uses a self-aligned oxide etch to suspend individual single-wall carbon nanotubes between metallic electrodes. This enables one to compare the properties of a particular nanotube before and after suspension, as well as to study transport in suspended tubes. As an example of the utility of the technique, we study quantum dots in suspended tubes, finding that their capacitances are reduced owing to the removal of the dielectric substrate. © 2001 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.65.Cf Surface cleaning, etching, patterning

Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100)

Wenquan Ma, Richard Nötzel, Hans-Peter Schönherr, and Klaus H. Ploog

Appl. Phys. Lett. 79, 4219 (2001); http://dx.doi.org/10.1063/1.1428107 (3 pages) | Cited 30 times

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The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. © 2001 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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