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17 Dec 2001

Volume 79, Issue 25, pp. 4073-4251

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Generation of 1.2 ps electrical pulses through parallel gating in ultrathin silicon photoconductive switches

J. F. Holzman, F. E. Vermeulen, and A. Y. Elezzabi

Appl. Phys. Lett. 79, 4249 (2001); http://dx.doi.org/10.1063/1.1426263 (3 pages) | Cited 2 times

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We report on a parallel-gating photoconductive switching technique which is capable of generating ultrashort electrical pulses. Carrier-lifetime-independent pulses as short as 1.2 ps are produced using a long-lifetime intrinsic float-zone (FZ) silicon substrate. The technique utilizes a thin FZ-silicon layer as the light-activated medium, where photoexcitation electrically contacts the switch output to both the bias line and the substrate ground plane. Model calculations based on transmission-line theory and lumped-element analysis accurately describe the experimental results. © 2001 American Institute of Physics.
Show PACS
85.60.-q Optoelectronic devices
84.30.Ng Oscillators, pulse generators, and function generators
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