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17 Dec 2001

Volume 79, Issue 25, pp. 4073-4251

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GaInSb/InAs/AlGaAsSb “W” quantum-well light-emitting diodes

D. G. Gevaux, A. M. Green, C. C. Phillips, I. Vurgaftman, W. W. Bewley, C. L. Felix, J. R. Meyer, H. Lee, and R. U. Martinelli

Appl. Phys. Lett. 79, 4073 (2001); http://dx.doi.org/10.1063/1.1426267 (3 pages) | Cited 3 times

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We report on the characterization of molecular-beam epitaxy-grown Ga0.75In0.25Sb/InAs/Al0.15Ga0.85As0.05Sb0.95 “W” quantum-well light-emitting diodes (LED). The devices demonstrated room-temperature emission with a peak wavelength of 3.3 μm. A pulsed current output power of 55 μW with a slope efficiency of 98 μW/A was measured and the 300 K internal efficiency was estimated to be 2.5%. Comparative power analysis suggests that LED and laser diode efficiencies are limited by the same thermally activated nonradiative mechanism, probably Auger recombination. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, and R. P. Schneider

Appl. Phys. Lett. 79, 4076 (2001); http://dx.doi.org/10.1063/1.1424061 (3 pages) | Cited 10 times

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The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%–38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Dj Gratings
81.65.Cf Surface cleaning, etching, patterning

High single-mode power observed from a coupled-resonator vertical-cavity laser diode

A. J. Fischer, K. D. Choquette, W. W. Chow, A. A. Allerman, D. K. Serkland, and K. M. Geib

Appl. Phys. Lett. 79, 4079 (2001); http://dx.doi.org/10.1063/1.1426254 (3 pages) | Cited 17 times

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We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits single fundamental-mode operation. The output powers are as high as 6.1 mW with side mode suppression ratios greater than 30 dB. The sizes of the implant and oxide current apertures are shown to be important for demonstrating the required selectivity for the fundamental lasing mode. With a fixed bias current on the implant cavity and increasing oxide cavity current, mode switching from single-mode operation to multimode operation and back to single-mode operation was observed. The intensities of the fundamental and first transverse modes were calculated by solving a set of multimode rate equations. The calculation indicates that the observed mode switching can be identified with changes in the optical length of the oxide cavity with increasing pump current. The observed mode dynamics are unique to coupled-resonator vertical-cavity lasers. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
85.30.De Semiconductor-device characterization, design, and modeling

Single-mode tunable organic laser based on an electroluminescent oligothiophene

M. Zavelani-Rossi, G. Lanzani, S. De Silvestri, M. Anni, G. Gigli, R. Cingolani, G. Barbarella, and L. Favaretto

Appl. Phys. Lett. 79, 4082 (2001); http://dx.doi.org/10.1063/1.1426686 (3 pages) | Cited 18 times

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Single-mode tunable laser emission is obtained from a stable cavity based on a prototype compound of a class of functionalized electroluminescent oligothiophenes. Laser emission is demonstrated in the red spectral region with a tunability wavelength range of 30 nm, centered at 607 nm. The laser exhibits a well-defined pump threshold and good emission characteristics. The results suggest the use of the family of functionalized oligothiophenes as optical amplifiers covering the whole visible spectral region. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.70.Hj Laser materials
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Lithium metal for x-ray refractive optics

E. M. Dufresne, D. A. Arms, R. Clarke, N. R. Pereira, S. B. Dierker, and D. Foster

Appl. Phys. Lett. 79, 4085 (2001); http://dx.doi.org/10.1063/1.1425068 (3 pages) | Cited 12 times

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Lithium metal is the best material for refractive lenses that must focus x-rays with energies below 15 keV, but to date no lens from Li has been reported. This letter demonstrates focusing of 10 keV x-rays with a one-dimensional sawtooth lens made from Li. The lens’ theoretical gain is 4.5, with manufacturing imperfections likely responsible for the threefold gain that is observed. Despite the Li reactivity the lens is stable over months of operation if kept under vacuum. © 2001 American Institute of Physics.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
41.50.+h X-ray beams and x-ray optics

Continuous wave waveguide laser at room temperature in Nd3+-doped Zn:LiNbO3

R. E. Di Paolo, E. Cantelar, P. L. Pernas, G. Lifante, and F. Cusso

Appl. Phys. Lett. 79, 4088 (2001); http://dx.doi.org/10.1063/1.1427426 (3 pages) | Cited 16 times

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This work reports continuous laser action at room temperature in LiNbO3:Nd3+ channel waveguides, fabricated by Zn diffusion. The absorbed pump power at the threshold was 1.25 mW and a slope efficiency of 20% was obtained. With our available pump power the laser could emit up to 0.14 mW without exhibiting any photorefractive damage. © 2001 American Institute of Physics.
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42.70.Hj Laser materials
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Pk Continuous operation
78.55.Hx Other solid inorganic materials
42.82.Cr Fabrication techniques; lithography, pattern transfer

Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals

Thomas D. Happ, Alexander Markard, Martin Kamp, Alfred Forchel, and Srinivasan Anand

Appl. Phys. Lett. 79, 4091 (2001); http://dx.doi.org/10.1063/1.1427158 (3 pages) | Cited 11 times

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We report the fabrication of short-cavity lasers with highly reflective two-dimensional photonic crystal mirrors on an InGaAsP/InP laser structure emitting at 1.57 μm. An intracavity photonic crystal mirror creates two coupled cavities, which provide additional longitudinal mode selection for stable single-mode operation with side-mode suppression ratios exceeding 35 dB. The shortest lasers with l = 100 μm overall length have a threshold current of 13 mA and provide more than 4 mW power under continuous wave operation. Longer devices with l = 200 μm deliver up to 9 mW. A maximum modulation bandwidth of 7.9 GHz was determined by relative intensity noise measurements. © 2001 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior
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