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24 Dec 2001

Volume 79, Issue 26, pp. 4271-4458

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Long-wavelength (λ≈16 μm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition

Michel Rochat, Daniel Hofstetter, Mattias Beck, and Jérôme Faist

Appl. Phys. Lett. 79, 4271 (2001); http://dx.doi.org/10.1063/1.1425468 (3 pages) | Cited 23 times

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Room-temperature operation of long-wavelength, Fabry–Perot and single-mode quantum-cascade lasers at λ ≈ 16 μm is reported. Multimode emission with pulsed peak power up to 400 mW at −40 °C and 220 mW at 30 °C is demonstrated. Single-mode emission up to 60 mW peak power has been achieved at 30 °C. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.Cd Superlattices
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High-performance photorefractive polymer composite with 2-dicyanomethylen-3-cyano-2,5-dihydrofuran chromophore

Daniel Wright, Ulrich Gubler, Yeonsuk Roh, W. E. Moerner, Meng He, and Robert J. Twieg

Appl. Phys. Lett. 79, 4274 (2001); http://dx.doi.org/10.1063/1.1428120 (3 pages) | Cited 17 times

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A nonlinear optical chromophore for photorefractive applications containing a 2-dicyanomethylen- 3-cyano-2,5-dihydrofuran acceptor group is presented. When doped into a plasticized composite of poly(n-vinylcarbazole), large gain coefficients (Γ) are observed with photorefractive speed similar to the best composites reported in the literature while maintaining low sample absorption (∼15 cm−1). © 2001 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics

Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers

S. A. Choulis, T. J. C Hosea, P. J. Klar, M. Hofmann, and W. Stolz

Appl. Phys. Lett. 79, 4277 (2001); http://dx.doi.org/10.1063/1.1424464 (3 pages) | Cited 13 times

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We report electromodulated reflectance studies on the band structure of a dilute-N (∼1%) (GaIn)(NAs)/GaAs/AlAs vertical-cavity surface-emitting laser (VCSEL), as a function of temperature and incidence angle. The wide range of operating temperatures observed for this type of VCSEL (∼360 K here) is due to the reduced temperature variation of the effective band gap of the active (GaIn)(NAs) quantum wells, and broad gain. By comparing lasing properties and band structure we argue that the gain broadening is not simply due to alloy disorder but arises from a recently-proposed intrinsic property of (GaIn)(NAs): the existence of different band gaps for the five possible nearest-neighbor configurations of the N substitutional impurity. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.Fg Quantum wells
78.67.De Quantum wells
78.30.Fs III-V and II-VI semiconductors
78.20.Jq Electro-optical effects

Highly directive light sources using two-dimensional photonic crystal slabs

Anne-Laure Fehrembach, Stefan Enoch, and Anne Sentenac

Appl. Phys. Lett. 79, 4280 (2001); http://dx.doi.org/10.1063/1.1427423 (3 pages) | Cited 25 times

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We have designed a microcavity with periodic microstructure that extracts nearly all the power emitted by a luminescent source and confines 80% of the energy radiated in the superstrate in a cone of half width 0.2° about the normal of the device. © 2001 American Institute of Physics.
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42.79.-e Optical elements, devices, and systems
85.60.-q Optoelectronic devices

Infrared tunable filter by the use of electrostatic force

Mitsunori Saito and Hideki Furukawa

Appl. Phys. Lett. 79, 4283 (2001); http://dx.doi.org/10.1063/1.1428406 (3 pages) | Cited 2 times

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An infrared Fabry–Pérot filter was fabricated by stacking two silicon plates with 7 μm spacing. As higher voltage was applied between the plates, the spacing decreased gradually due to the electrostatic force, and consequently, the interference peaks in the transmission spectrum shifted to a shorter wavelength; e.g., the peak at the 14.3 μm wavelength shifted to 9.5 μm by 88 V application. The transmittance of a 3.39 μm He–Ne laser was modulated between 5% and 60% by applying a 12 V modulation voltage together with 80 V bias voltage. © 2001 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
07.60.Ly Interferometers

Theoretical and experimental investigation of straight defect waveguides in AlGaAs-based air-bridge-type two-dimensional photonic crystal slabs

Y. Sugimoto, N. Ikeda, N. Carlsson, K. Asakawa, N. Kawai, and K. Inoue

Appl. Phys. Lett. 79, 4286 (2001); http://dx.doi.org/10.1063/1.1427752 (3 pages) | Cited 17 times

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A detailed investigation was undertaken from both theoretical and experimental perspectives of straight defect waveguides in an AlGaAs-based air-bridge-type two-dimensional photonic crystal slab. Optical propagation properties were obtained by two methods: measurement of transmission spectra at wavelengths ranging from 850 to 1100 nm, and with plan-view observations of the optical beam trace along the waveguide measured with an infrared-vidicon camera. Three-dimensional finite-difference time-domain simulations for the band structure and transmission spectra in the air-bridge slab with and without defect waveguides resulted in the appearance of defect propagation modes specific to the defect waveguide, between two slab modes for the defect-free photonic crystal slab. These defect modes were experimentally identified in the measured transmission spectra. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
02.70.Bf Finite-difference methods
42.70.Qs Photonic bandgap materials

High quality two-dimensional photonic crystal slab cavities

Tomoyuki Yoshie, Jelena Vučković, Axel Scherer, Hao Chen, and Dennis Deppe

Appl. Phys. Lett. 79, 4289 (2001); http://dx.doi.org/10.1063/1.1427748 (3 pages) | Cited 60 times

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We have fabricated and characterized donor-mode nanocavities formed by a single defect cavity defined within a two-dimensional photonic crystal slab. Quantum dots emitting in the 1.1–1.3 micron range were used as luminescence sources, and a design using fractional edge dislocations was used to demonstrate well-confined dipole modes with high quality factors. By applying the fractional dislocation geometry, the measured quality factor could be increased to values as high as 2800. This compares with typical quality factors of around 1500 measured from more conventional shallow donor mode cavities with larger mode volumes. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.67.Hc Quantum dots

Nonreciprocal phase shift of TE modes induced by a compensation wall in a magneto–optic rib waveguide

L. Wilkens, D. Träger, H. Dötsch, A. F. Popkov, and A. M. Alekseev

Appl. Phys. Lett. 79, 4292 (2001); http://dx.doi.org/10.1063/1.1428633 (3 pages) | Cited 10 times

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Garnet films of composition (Gd, Bi)3(Fe, Ga)5O12 are grown by liquid–phase epitaxy on (111) oriented substrates of gadolinium gallium garnet. The films are close to compensation. Using laser annealing straight vertical compensation walls (CW) are generated. Monomode rib waveguides are fabricated by ion beam etching so that a CW is located close to a rib center. The CW induces a nonreciprocal phase shift of the TE0 mode. The dependence of this phase shift on the position of the CW within the rib is calculated. Experimentally a phase shift of 0.7 cm−1 at 1.3 μm wavelength is observed. The deviation from the theoretical value is discussed. Such waveguides are essential to realize polarization–independent optical isolators. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
85.70.Sq Magnetooptical devices
85.70.Ge Ferrite and garnet devices
75.50.Gg Ferrimagnetics

Grazing-angle intersubband absorption and photocurrent in thick n-doped GaAs multiple-quantum-well structures

E. Dupont, H. C. Liu, S. R. Schmidt, and A. Seilmeier

Appl. Phys. Lett. 79, 4295 (2001); http://dx.doi.org/10.1063/1.1429298 (3 pages) | Cited 4 times

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We present an experimental study of the absorption and photocurrent in a thick n-doped GaAs/AlGaAs quantum-well infrared photodetector (QWIP). At grazing-angle incidence, we observed peaks that are far detuned from the intersubband resonance. These phenomena can be well explained by the resonant coupling of the light to leaky waveguide modes in the multiple-quantum-well stack. We propose taking advantage of these waveguiding effects for the design of QWIP structures operated at a high temperature. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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Wet plasma reactor for remidiation of SO2

S. Seethamsetty, S. K. Dhali, and Bakul Dave

Appl. Phys. Lett. 79, 4298 (2001); http://dx.doi.org/10.1063/1.1426692 (3 pages) | Cited 4 times

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In pollution control applications, the presence of water in the electrical discharge enhances oxidation of pollutants. The results of an electrical discharge in gas when it flows through a heterogeneous mixture of water and dielectric pellets are reported. The discharge in the wet plasma reactor is more uniform compared to dry dielectric-barrier reactors. The electrical characteristics of such a discharge are discussed. Also the results of removal of SO2 with the wet reactor are reported. The wet reactor was found to be 5–10 times more energy efficient in removing SO2 compared to conventional dry plasma reactors. © 2001 American Institute of Physics.
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07.88.+y Instruments for environmental pollution measurements
92.60.Sz Air quality and air pollution
52.77.-j Plasma applications
52.80.-s Electric discharges
52.25.Fi Transport properties

Detection of particles of less than 5 nm in diameter formed in an argon–silane capacitively coupled radio-frequency discharge

L. Boufendi, J. Gaudin, S. Huet, G. Viera, and M. Dudemaine

Appl. Phys. Lett. 79, 4301 (2001); http://dx.doi.org/10.1063/1.1425431 (3 pages) | Cited 59 times

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A method for the detection of dust particles occurring in silane–argon gas mixture plasmas is presented. It is based on the spectral analysis of the radio-frequency current. The amplitudes of the fundamental (13.56 MHz) and second harmonics (40.68 MHz) are very sensitive to the presence of the earlier nanoparticles when their size is in the range of 2–3 nm even if their influence on the capacitive character of the impedance is negligible. This method is nonperturbative, with a temporal resolution in the microsecond range, very easy to implement, and can thus be used for industrial reactors. © 2001 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.70.Ds Electric and magnetic measurements
52.77.Dq Plasma-based ion implantation and deposition
52.27.Lw Dusty or complex plasmas; plasma crystals
52.40.Kh Plasma sheaths

Microdischarge array-assisted ignition of a high-pressure discharge: Application to arc lamps

J. G. Eden, C. J. Wagner, J. Gao, N. P. Ostrom, and S.-J. Park

Appl. Phys. Lett. 79, 4304 (2001); http://dx.doi.org/10.1063/1.1428119 (3 pages) | Cited 11 times

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An array of cylindrical microdischarges has been demonstrated to significantly improve the ignition characteristics of a high-pressure arc discharge by preionizing the anode–cathode gap. Situated behind the cathode, the microdischarge array serves to reduce both the statistical and formative time delays by providing seed electrons in the critical early phases of the startup of a cold lamp. Experiments conducted in Ar and Ne/2% Xe mixtures at pressures ranging from 35 to 600 Torr with spacings between the tungsten electrodes of 1–3.5 cm show that a three element array of 400-μm-diam cylindrical microdischarges lowers the dc ignition voltage for the lamp by at least a factor of 2 when the Ar pressure is between 50 and 75 Torr. The required voltage is constant over a broad range in Ar pressure (35 to ∼90 Torr) and similar results are observed with 200-μm-diam microdischarges and for lamp ignition in Ne/2% Xe gas mixtures. © 2001 American Institute of Physics.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
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Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses

J. Keckes, J. W. Gerlach, R. Averbeck, H. Riechert, S. Bader, B. Hahn, H.-J. Lugauer, A. Lell, V. Härle, A. Wenzel, and B. Rauschenbach

Appl. Phys. Lett. 79, 4307 (2001); http://dx.doi.org/10.1063/1.1427424 (3 pages) | Cited 7 times

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Residual stresses and unstressed lattice parameters are characterized in heteroepitaxial GaN thin films grown on (0001) sapphire using three different deposition techniques. X-ray diffraction measurements in the temperature range of 25–600 °C indicate a reversible change of stresses in the films from compressive to tensile state and vice versa. The thermal behavior of stresses in the samples prepared by different methods is comparable. The experimental results are consistent with the model of thermal stresses originating from the mismatch of thermal expansion coefficients of GaN and sapphire.© 2001 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
62.20.-x Mechanical properties of solids

Photoluminescence of transparent strontium–barium–niobate-doped silica nanocomposites

S. G. Lu, C. L. Mak, K. H. Wong, and K. W. Cheah

Appl. Phys. Lett. 79, 4310 (2001); http://dx.doi.org/10.1063/1.1427419 (3 pages) | Cited 8 times

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Optically transparent nanocomposites of strontium–barium–niobate (SBN) and silica were fabricated via a novel sol–gel method. The nanocomposites were annealed in temperatures of 600–800 °C to yield the nanometer-sized tetragonal tungsten–bronze phase of SBN crystallites. Photoluminescence studies at temperatures from 10 K to room temperature were performed. The undoped silica matrix showed a strong emission band at 3.2 eV and a weak emission band at 2.65 eV. They were noticeably suppressed in our SBN/SiO2 nanocomposites. Extra sharp peaks on top of the 3.2 eV band were seen. An additional emission band at 2.3 eV due to transitions within the NbO6 complex of SBN crystallites was also observed. This emission band showed a large blueshift with decreasing SBN crystallite size. This demonstrates that the photoluminescence spectra of ferroelectric-doped silica nanocomposites have a strong dependence on crystallite size. © 2001 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
77.84.Lf Composite materials
78.55.Hx Other solid inorganic materials
61.46.-w Structure of nanoscale materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?

J. Gebauer, R. Zhao, P. Specht, E. R. Weber, F. Börner, F. Redmann, and R. Krause-Rehberg

Appl. Phys. Lett. 79, 4313 (2001); http://dx.doi.org/10.1063/1.1427150 (3 pages) | Cited 5 times

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We investigate native defects in nonstoichiometric GaAs layers grown at low temperatures by molecular-beam epitaxy (LT-GaAs) doped with Be. Ga vacancies (VGa) are found by positron annihilation in all layers. The concentration of VGa is independent of the Be doping in contrast to the previous belief that it decreases. Simultaneously, the concentration of As antisite defects (AsGa) was measured by optical absorption. We find the same relationship between VGa and AsGa concentrations as reported earlier for undoped LT-GaAs. Thus, Be doping has no significant influence on the incorporation of native point defects in LT-GaAs. The thermal stability of such material must therefore be explained otherwise. © 2001 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
78.66.Fd III-V semiconductors
68.60.Dv Thermal stability; thermal effects
61.72.uj III-V and II-VI semiconductors
78.70.Bj Positron annihilation

Effect of dislocations on thermal conductivity of GaN layers

D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florescu, and Fred H. Pollak

Appl. Phys. Lett. 79, 4316 (2001); http://dx.doi.org/10.1063/1.1427153 (3 pages) | Cited 40 times

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We report calculation of the lattice thermal conductivity in wurtzite GaN. The proposed model is material specific and explicitly includes phonon relaxation on threading dislocations and impurities typical for GaN. We have found that a decrease of the dislocation density by two orders of magnitude in GaN leads to a corresponding increase of the thermal conductivity from 1.31 to 1.97 W/cm K. This theoretical prediction is in very good agreement with experimental data obtained from scanning thermal microscopy. The developed model can be used for thermal budget calculations in high-power density GaN devices. © 2001 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura

Appl. Phys. Lett. 79, 4319 (2001); http://dx.doi.org/10.1063/1.1428404 (3 pages) | Cited 31 times

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Radiative and nonradiative recombination dynamics in strained cubic (c-) In0.1Ga0.9N/c-GaN multiple quantum wells were studied using temperature-dependent time-resolved photoluminescence (TRPL) spectroscopy. In contrast to hexagonal InGaN quantum wells, low-excitation photoluminescence peak energy increased moderately with decreasing well thickness L and the PL lifetime did not strongly depend on L. The results clearly indicated that the piezoelectric field was not acting on the transition process. The TRPL signal was well fitted as a stretched exponential decay from 10 to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nanostructures such as In clusters. The localized states were considered to have two-dimensional density of states at 300 K (quantum disk size), since the radiative lifetime increased with increasing temperature above 150 K.© 2001 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.67.De Quantum wells
78.55.Cr III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.20.At Surface states, band structure, electron density of states
78.47.-p Spectroscopy of solid state dynamics

Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

M. E. Twigg, D. D. Koleske, A. E. Wickenden, R. L. Henry, and S. C. Binari

Appl. Phys. Lett. 79, 4322 (2001); http://dx.doi.org/10.1063/1.1428769 (3 pages) | Cited 7 times

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Transmission electron microscopy has been used to study AlN nucleation layers (NLs) grown using metalorganic vapor phase epitaxy, in order to link the resistivity of unintentionally doped GaN films to NL microstructure. We observed that high-resistivity (HR) GaN films grew on large-grained NLs, which, in turn, grew on smooth sapphire surfaces. These HR films had a higher density of edge dislocations than screw and mixed dislocations. Low-resistivity GaN films were found to grow on fine-grained NLs that grew on rougher sapphire surfaces. These LR films had a density of edge dislocations close to the combined density of screw and mixed dislocations. The LR films in this study were also found to have a buried conductive layer that is detectable using capacitance–voltage measurements. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Orientation control of liquid crystal droplets dispersed in a polymer matrix

F. P. Nicoletta, G. De Filpo, D. Cupelli, M. Macchione, and G. Chidichimo

Appl. Phys. Lett. 79, 4325 (2001); http://dx.doi.org/10.1063/1.1427750 (3 pages) | Cited 5 times

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The encapsulation of monomer molecules in liquid crystal droplets dispersed in a thermoplastic matrix provides a convenient method to control the orientation of liquid crystal directors. The imprint of droplet interfaces is obtained by photopolymerization of monomer molecules by means of a polymerization induced phase separation process performed in a magnetic field. In such a way, uniform orientations of liquid crystal directors can be achieved in cells without any surface treatment. The concentration of monomer molecules is an important parameter, which influences the final electro-optical properties of films. © 2001 American Institute of Physics.
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61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
64.75.-g Phase equilibria
78.20.Jq Electro-optical effects
82.35.-x Polymers: properties; reactions; polymerization

Silicon self-diffusion under extrinsic conditions

Ant Ural, P. B. Griffin, and J. D. Plummer

Appl. Phys. Lett. 79, 4328 (2001); http://dx.doi.org/10.1063/1.1425953 (3 pages) | Cited 4 times

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Self-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both n- and p-type backgrounds. This is direct evidence of the existence of both negatively and positively charged native point defects in Si. We use a simple model involving three charge states to explain the data, which yield the relative contributions of these charge states to the overall self-diffusion coefficient and the locations of the deep levels they introduce in the band gap. © 2001 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
71.55.Cn Elemental semiconductors
81.05.Cy Elemental semiconductors
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors

Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1−xAlxAs/InP

B. H. Koo, T. Hanada, H. Makino, and T. Yao

Appl. Phys. Lett. 79, 4331 (2001); http://dx.doi.org/10.1063/1.1428763 (3 pages) | Cited 10 times

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We present the results of the formation of the InAs quantum dots (QDs) on the (100) In1−xAlxAs(InAlAs)/InP substrate by using relaxed InAlAs buffer layers with different compositions. Variations of surface morphology of InAs QDs as a function of InAs–InAlAs lattice mismatch have been evaluated by atomic force microscopy. When the lattice mismatch increases from 2.4% to 4.2%, the size of QDs decreases, and the density of QDs increases. Each of these dependences can be fitted to a power function of the misfit unless the Al diffusion, roughness of the buffer layer, and/or the ripening of small dots modify the size and density.© 2001 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
68.35.Md Surface thermodynamics, surface energies

Flux dependence of oxygen-beam-induced ripple growth on silicon

Z. X. Liu and P. F. A. Alkemade

Appl. Phys. Lett. 79, 4334 (2001); http://dx.doi.org/10.1063/1.1428414 (3 pages) | Cited 11 times

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The influence of flux on the growth of ripples on Si(111) under bombardment of oblique, 1 keV O2+ beams was investigated. We found that a low flux leads to a significantly higher ripple growth rate per ion than a high flux. This effect is attributed to a reduction in the viscous flow of the amorphized material. At low fluxes, the viscous flow is reduced because there is more thermal annealing of the radiation damage. Current models of surface roughening remain valid if the flux dependence of the viscous flow is taken into account. © 2001 American Institute of Physics.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc Kinetics of defect formation and annealing
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Electron work function: A parameter sensitive to the adhesion behavior of crystallographic surfaces

D. Y. Li and W. Li

Appl. Phys. Lett. 79, 4337 (2001); http://dx.doi.org/10.1063/1.1428766 (2 pages) | Cited 32 times

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The adhesive force (AF) and the electron work function (EWF) of different crystallographic planes of Cu were determined, with the aim of exploring the potential application of the Kelvin method in characterizing the adhesion of solid surfaces especially those in nano/microdevices. It was demonstrated that there was a close correlation between the EWF and AF, and both the parameters were dependent on the surface atomic arrangement. This study indicates that the EWF is a parameter that could be used to characterize the adhesion behavior of a surface. © 2001 American Institute of Physics.
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68.35.Np Adhesion
73.30.+y Surface double layers, Schottky barriers, and work functions
68.47.De Metallic surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)

Measurement of interstitial oxygen concentration in silicon below 1015 atoms/cm3

A. Sassella

Appl. Phys. Lett. 79, 4339 (2001); http://dx.doi.org/10.1063/1.1429293 (3 pages) | Cited 2 times

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The absorption coefficient of silicon at 1118 cm−1 due to the multiphonon contribution related to the combination of two transverse optical and one transverse acoustical phonons is measured at the liquid He temperature. The precise knowledge of this contribution, usually hidden by the absorption band of the unavoidable oxygen impurities, permits the quantitative measurement of interstitial oxygen concentration down to 3×1014 atoms/cm3. © 2001 American Institute of Physics.
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61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
63.20.K- Phonon interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Am Elemental semiconductors and insulators

Direct observation of the coexistence of coherent and incoherent InAs self-assembled dots by x-ray scattering

A. Malachias, R. Magalhães-Paniago, B. R. A. Neves, W. N. Rodrigues, M. V. B. Moreira, H.-D. Pfannes, A. G. de Oliveira, S. Kycia, and T. H. Metzger

Appl. Phys. Lett. 79, 4342 (2001); http://dx.doi.org/10.1063/1.1427421 (3 pages) | Cited 9 times

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In this letter, grazing incidence x-ray scattering is employed as a method to identify relaxed islands in an ensemble of partially coherent self-assembled InAs quantum dots. A simple model of strained pyramidal islands enables the association of the local lattice parameter of an island to its lateral size. A comparison between the island side length and its strain state allows the identification of coherent and incoherent nanostructures, revealing the size–strain interplay during growth. © 2001 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.70.Ck X-ray scattering
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