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24 Dec 2001

Volume 79, Issue 26, pp. 4271-4458

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Simulation of charge injection enhancements in organic light-emitting diodes

B. Masenelli, D. Berner, M. N. Bussac, F. Nüesch, and L. Zuppiroli

Appl. Phys. Lett. 79, 4438 (2001); http://dx.doi.org/10.1063/1.1426683 (3 pages) | Cited 15 times

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We have investigated by numerical simulation of real devices the reasons for electron injection enhancement due to lithium fluoride (LiF) and for hole injection enhancement due to copper phtalocyanine (CuPc) in organic light-emitting diodes (OLEDs). The reference data introduced in the code were obtained from Kelvin probe and charge transport measurements. In the case of LiF, the reduction of the injection barrier is mainly due to a static dipolar charge distribution across the ionic layer, while in CuPc the space charge which lowers the barrier results from a large hole accumulation at the CuPc/hole-transmitting layer interface, during injection. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
73.20.-r Electron states at surfaces and interfaces
73.30.+y Surface double layers, Schottky barriers, and work functions

Multiple-tunneling noise in superconducting tunnel junctions from partial current integration

L. J. Hiller, M. L. van den Berg, and S. E. Labov

Appl. Phys. Lett. 79, 4441 (2001); http://dx.doi.org/10.1063/1.1428618 (3 pages) | Cited 6 times

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Superconducting tunnel junctions can be used as high-resolution particle or photon energy spectrometers. A photon absorbed in a superconductor breaks Cooper pairs into quasiparticles. These quasiparticles tunnel through the junction barrier and are detected as a pulse of excess current. Many junction designs allow the quasiparticles to tunnel more than once, an exponentially mixed Poisson process. However, multiple tunneling increases the fluctuation in the measured charge. We calculate the significance of these fluctuations algebraically as a function of time during the current pulse. We also calculate the finite integration window that minimizes the contribution of this noise. In addition, we calculate the effects of a low-pass amplifier and a Gaussian-shaping amplifier on the tunneling noise. With certain filtering time constants, the tunneling noise can be reduced while still providing some gain. © 2001 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.20.Fg BCS theory and its development
74.40.-n Fluctuation phenomena

Magnetotunneling spectroscopy of resonant anticrossing in terahertz intersubband emitters

Benjamin S. Williams, Hans Callebaut, Qing Hu, and John L. Reno

Appl. Phys. Lett. 79, 4444 (2001); http://dx.doi.org/10.1063/1.1426694 (3 pages) | Cited 8 times

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Intersubband transport and electroluminescence has been investigated in a double-quantum-well structure based on an intrawell (vertical) THz radiative transition. Magnetotunneling spectroscopy was used to determine subband energies, including the minimum energy separation (∼1.7 meV) between two anticrossed levels. The presence of this anticrossing indicates that in this structure, electron removal from the lower radiative state should be modeled by coherent resonant tunneling rather than incoherent sequential tunneling. © 2001 American Institute of Physics.
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73.63.Hs Quantum wells
73.21.Fg Quantum wells
78.67.De Quantum wells
73.23.-b Electronic transport in mesoscopic systems
78.60.Fi Electroluminescence
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
42.55.Px Semiconductor lasers; laser diodes

Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films

A. A. Lebedev, N. B. Strokan, A. M. Ivanov, D. V. Davydov, N. S. Savkina, E. V. Bogdanova, A. N. Kuznetsov, and R. Yakimova

Appl. Phys. Lett. 79, 4447 (2001); http://dx.doi.org/10.1063/1.1428765 (3 pages) | Cited 5 times

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The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n–p–n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a “floating base” regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.
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29.40.Wk Solid-state detectors
73.61.Le Other inorganic semiconductors
85.30.Pq Bipolar transistors
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