APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

24 Dec 2001

Volume 79, Issue 26, pp. 4271-4458

Return to All Sections
back to top
RSS Feeds

Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications

Hyungsuk Jung, Hyundoek Yang, Kiju Im, and Hyunsang Hwang

Appl. Phys. Lett. 79, 4408 (2001); http://dx.doi.org/10.1063/1.1427155 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, we describe a process for the preparation of high-quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional chemical oxide and nitride as interfacial layers, TaOxNy metal–oxide–semiconductor capacitors using ZrSixOy as an interfacial layer exhibit lower leakage current levels at the same oxide thickness and a lower interface state density. We were able to confirm the TaOxNy/ZrSixOy stack structure by Auger electron spectroscopy and transmission electron microscopy analyses. Zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications. © 2001 American Institute of Physics.
Show PACS
84.32.Tt Capacitors
85.30.Tv Field effect devices
77.55.-g Dielectric thin films
79.20.Fv Electron impact: Auger emission

Multimode quantitative scanning microwave microscopy of in situ grown epitaxial Ba1−xSrxTiO3 composition spreads

K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, J. Hattrick-Simpers, and H. Chang

Appl. Phys. Lett. 79, 4411 (2001); http://dx.doi.org/10.1063/1.1427438 (3 pages) | Cited 31 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have performed variable-temperature multimode quantitative microwave microscopy of in situ epitaxial Ba1−xSrxTiO3 thin-film composition spreads fabricated on (100) LaA1O3 substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO3 to SrTiO3. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba1−xSrxTiO3 at microwave frequencies. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
07.79.-v Scanning probe microscopes and components
68.37.-d Microscopy of surfaces, interfaces, and thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
68.55.-a Thin film structure and morphology

Electromigration in multilevel interconnects with polymeric low-k interlevel dielectrics

P. Justison, E. Ogawa, P. S. Ho, M. Gall, C. Capasso, D. Jawarani, J. Wetzel, and H. Kawasaki

Appl. Phys. Lett. 79, 4414 (2001); http://dx.doi.org/10.1063/1.1421426 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The impact of low-k dielectrics on the reliability of advanced Cu interconnects is of growing importance. As a first step to understanding this impact, we have investigated the effect of two types of polymeric low-k materials on the electromigration (EM) behavior of multilevel Al(Cu) interconnects. The two polymers used as interlevel dielectrics in this work are a fluorinated polyimide and a poly(aryl) ether. Joule heating experiments and microstructural analysis were both conducted on Al(Cu) to ensure that there were no significant microstructural or thermal differences between the polymer samples and their oxide counterparts. The resulting EM behavior can then be directly attributed to differences in the mechanical properties of the low-k and oxide interlevel dielectrics. We have observed that the low-k samples had a higher steady-state drift rate and did not reach saturation, resulting in shorter EM lifetimes. These results indicate that the short length is greatly modified with the incorporation of mechanically weaker dielectrics and can potentially alter reliability design strategies as Cu/Low-k integration moves into the production stage. © 2001 American Institute of Physics.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration

Polarization reversal in a perovskite ferroelectric by molecular-dynamics simulation

M. Sepliarsky, S. R. Phillpot, S. K. Streiffer, M. G. Stachiotti, and R. L. Migoni

Appl. Phys. Lett. 79, 4417 (2001); http://dx.doi.org/10.1063/1.1428122 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We characterize the microscopic processes that take place during polarization reversal in the tetragonal phase of a monodomain order–disorder perovskite ferroelectric using molecular-dynamics simulation. Microscopically the polarization of each unit cell reorients from an [001] orientation to an [00math] orientation through intermediate states with polarization parallel to [011] and [01math]. For low electric field and low temperature, chains of polarization reverse in a spatially coherent manner, resulting in macroscopic intermediate states with orthorhombic symmetry. At high electric field and high temperature the process is completely incoherent and there is no well-defined macroscopic intermediate state. © 2001 American Institute of Physics.
Show PACS
77.80.Fm Switching phenomena
02.70.Ns Molecular dynamics and particle methods
77.22.Ej Polarization and depolarization

Large flexoelectric polarization in ceramic lead magnesium niobate

Wenhui Ma and L. Eric Cross

Appl. Phys. Lett. 79, 4420 (2001); http://dx.doi.org/10.1063/1.1426690 (3 pages) | Cited 40 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Flexoelectric coefficient μ12 is greatly enhanced in the relaxor ferroelectric lead magnesium niobate ceramic. Phenomenological analysis suggests the high dielectric permittivity is inadequate to explain the great enhancement. Temperature dependent measurement reveals a close relation between the flexoelectric polarization and the preexisting polar microregions in this relaxor ferroelectrics. It is proposed that the strain gradient might change the Gibbs free energy of the relaxor system and easily reorient the already existing polar microregions, leading to the greatly enhanced flexoelectric effect. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Ly Strain-induced piezoelectric fields
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.-e Ferroelectricity and antiferroelectricity
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close