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24 Dec 2001

Volume 79, Issue 26, pp. 4271-4458

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Giant photoresistivity and optically controlled switching in self-assembled nanowires

N. Kouklin, L. Menon, A. Z. Wong, D. W. Thompson, J. A. Woollam, P. F. Williams, and S. Bandyopadhyay

Appl. Phys. Lett. 79, 4423 (2001); http://dx.doi.org/10.1063/1.1427156 (3 pages) | Cited 47 times

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We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in “normally on” infrared photodetectors and optically controlled switches. © 2001 American Institute of Physics.
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73.63.Nm Quantum wires
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.63.Bd Nanocrystalline materials
81.15.Pq Electrodeposition, electroplating

Investigation of In segregation in InAs/AlAs quantum-well structures

M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter

Appl. Phys. Lett. 79, 4426 (2001); http://dx.doi.org/10.1063/1.1427148 (3 pages) | Cited 13 times

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In this letter, we report the investigation of In segregation in InAs/AlAs heterostructures. InAs layers with different thicknesses were grown by molecular beam epitaxy on GaAs (001) substrates. The layers were investigated by transmission electron microscopy. Profiles of the chemical composition of the InAs layers in the [001] direction were deduced from high-resolution lattice fringe images using the composition evaluation by lattice fringe analysis method. The segregation efficiency was derived by fitting the measured In concentration profiles with the segregation model of Muraki et al. [K. Muraki et al., Appl. Phys. Lett. 61, 557 (1992)]. We obtain efficiency of R = 0.77±0.03 for the segregation of In in AlAs/InAs at a temperature of 530 °C. © 2001 American Institute of Physics.
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68.65.Fg Quantum wells
68.35.Dv Composition, segregation; defects and impurities
81.07.St Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Magnetic anisotropy in prismatic nickel nanowires

L. Sun, P. C. Searson, and C. L. Chien

Appl. Phys. Lett. 79, 4429 (2001); http://dx.doi.org/10.1063/1.1428113 (3 pages) | Cited 34 times

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Nickel nanowire arrays with a diamond-shaped cross section and the same orientation have been fabricated in nanoporous single mica crystal membranes by electrodeposition. All wires are 5 μm long with an effective diameter of 120 nm. The sample can be considered as a collection of laterally and vertically aligned identical micromagnetic prisms. We report on the magnetic anisotropy due to the quasi-one-dimensional wire shape and diamond cross section. © 2001 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.30.Gw Magnetic anisotropy
81.07.Bc Nanocrystalline materials
75.60.Jk Magnetization reversal mechanisms
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Plasmon energy shift in porous silicon measured by x-ray photoelectron spectroscopy

N. Mannella, G. Gabetta, and F. Parmigiani

Appl. Phys. Lett. 79, 4432 (2001); http://dx.doi.org/10.1063/1.1425956 (3 pages) | Cited 2 times

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In order to provide experimental support for quantum confinement models describing electronic effects in porous silicon (p-Si), the Si 2s and Si 2p plasmon losses have been studied by x-ray photoelectron spectroscopy. The p-Si plasmon energy was found at a value 0.8÷1.6 eV higher than that of bulk Si (17.4 eV), as measured on the cleaned Si substrate as a reference. The magnitude of these shifts suggests possible quantum confinement effects ascribed to the p-Si nanostructures. © 2001 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.22.Lp Collective excitations
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

B. Salem, J. Olivares, G. Guillot, G. Bremond, J. Brault, C. Monat, M. Gendry, G. Hollinger, F. Hassen, and H. Maaref

Appl. Phys. Lett. 79, 4435 (2001); http://dx.doi.org/10.1063/1.1427742 (3 pages) | Cited 23 times

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We have investigated the effect of misorientated InP(001) substrates on the optical properties of InAs quantum islands (QIs) grown by molecular-beam epitaxy in the Stranski–Krastanow regime. Detailed temperature-dependent photoluminescence (PL), excitation density PL, and polarization of photoluminescence (PPL) are studied. PPL shows a high degree of linear polarization (near 40%) for the nominally oriented substrate n and for the substrate with 2° off miscut angle toward the [110] direction (2° F), while it is near 15% for the substrate with 2° off miscut angle towards [010] direction (2° B), indicating the growth of InAs quantum wires on nominal and 2° F substrates and of InAs quantum dots on 2° B substrate. These island shapes are confirmed by morphological investigations performed by atomic force microscopy. The integrated PL intensity remains very strong at room temperature, as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP(001). © 2001 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
78.67.Lt Quantum wires
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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