APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

31 Dec 2001

Volume 79, Issue 27, pp. 4479-4603

Return to All Sections
back to top
RSS Feeds

Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

Y. Liu, Z. L. Rang, A. K. Fung, C. Cai, P. P. Ruden, M. I. Nathan, and H. Shtrikman

Appl. Phys. Lett. 79, 4586 (2001); http://dx.doi.org/10.1063/1.1427753 (3 pages) | Cited 4 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [1math0] directions. We obtain a value for the piezoelectric constant e14 of AlAs to be −0.26 C/m2, compared to the value −0.225 C/m2 calculated by K. Hübner [Phys. Status Solidi B 57, 627 (1973)]. © 2001 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
77.65.Bn Piezoelectric and electrostrictive constants

Polymer PBT/n-GaN metal–insulator–semiconductor structure

L. W. Tu, P. H. Tsao, K. H. Lee, Ikai Lo, S. J. Bai, C. C. Wu, K. Y. Hsieh, and J. K. Sheu

Appl. Phys. Lett. 79, 4589 (2001); http://dx.doi.org/10.1063/1.1429297 (3 pages) | Cited 14 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Organic poly(p-phenylenebenzobisthiazole), PBT, is spin coated on n-GaN epilayer to serve as a gate insulating layer. The GaN is grown on c sapphire by the metalorganic-chemical-vapor-deposition method. A metal-insulator-semiconductor structure is fabricated with Al ohmic contact to the n-GaN, and Au/Al gate metal on top of the PBT. High-frequency capacitance measurements are performed. A doping concentration of 8.2×1016 cm−3 is obtained from the capacitance in the depletion region as compared with a Hall value of 7.8×1016 cm−3. Another technique of max–min capacitance method is also used in the calculation of the doping concentration. The threshold voltage is calculated as −5.1 V, and negative charges with an effective charge number density of 9.3×1011 cm−2 shift the capacitance curve towards the positive voltage side. The hysteresis phenomenon is observed and analyzed. The current–voltage curve shows a low, constant current value up to 20 V. © 2001 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi, H. L. Tay, B. Yu, and M. K. Radhakrishnan

Appl. Phys. Lett. 79, 4592 (2001); http://dx.doi.org/10.1063/1.1428410 (3 pages) | Cited 26 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si3N4 interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology. © 2001 American Institute of Physics.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration

Photoemission spectroscopy study of Alq3 and metal mixed interfaces

Soonnam Kwon, Shin Cheul Kim, Youngkyoo Kim, Jae-Gyoung Lee, Sunwook Kim, and Kwangho Jeong

Appl. Phys. Lett. 79, 4595 (2001); http://dx.doi.org/10.1063/1.1428777 (3 pages) | Cited 6 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic structures of mixed layers of tris (8-hydroxy-quinoline) aluminum (Alq3) and metal (Au and Al) were studied by ultraviolet and x-ray photoelectron spectroscopy (UPS and XPS). The devices with a mixed layer between Alq3 and the cathode were fabricated. The barrier height for electron injection was reduced by doping metals (Au or Al) into Alq3. The doping enhanced the performance of the device. From the XPS study, the doped Au metal did not react with Alq3 and in addition, the doped Al metal reacted slightly with Alq3. From the UPS study, the highest occupied molecular orbit shifted to a higher binding energy for both metal mixed layers. From these studies, it is concluded that the enhanced device characteristics come from the barrier height reduction by the metal doped in Alq3 rather than from the charge transfer complex induced by the reaction of Alq3 and metal. © 2001 American Institute of Physics.
Show PACS
79.60.Jv Interfaces; heterostructures; nanostructures
73.20.-r Electron states at surfaces and interfaces
73.40.Ns Metal-nonmetal contacts
85.60.Jb Light-emitting devices
68.35.Fx Diffusion; interface formation
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close