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31 Dec 2001

Volume 79, Issue 27, pp. 4479-4603

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Polarization reversal study using ultrasound

Jianhua Yin and Wenwu Cao

Appl. Phys. Lett. 79, 4556 (2001); http://dx.doi.org/10.1063/1.1428629 (3 pages) | Cited 17 times

Online Publication Date: 13 March 2002

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Show Abstract
We found that the sound velocity changes drastically near the coercive field for a 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 ferroelectric single crystal, which reflects that domain rotation occurred during polarization switching. This velocity change associated with polarization switching provides a powerful method to study the dynamics of polarization reversal process in nontransparent ferroelectric crystals. A complete phase velocity-electric field loop was measured quasi-statically in a switching cycle and compared with the polarization hysteresis loop. In addition, two attenuation peaks were found in the switching cycle, which indicates that two domain switching processes are involved in the polarization reversal.© 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
62.65.+k Acoustical properties of solids

In situ electrical-field-induced growth and properties of Bi3TiNbO9 ferroelectric thin films

B. Yang, X. J. Zhang, S. T. Zhang, X. Y. Chen, Z. C. Wu, Y. F. Chen, Y. Y. Zhu, Z. G. Liu, and N. B. Ming

Appl. Phys. Lett. 79, 4559 (2001); http://dx.doi.org/10.1063/1.1430023 (3 pages) | Cited 5 times

Online Publication Date: 13 March 2002

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With Bi3TiNbO9 (BTN) ferroelectric samples, in situ electrical-field-induced growth of ferroelectric thin films was demonstrated to control the films’ microstructure and manipulate their ferroelectric properties. BTN films on Ti/SiO2/Si substrates were grown at a relatively low temperature (650 °C) with a biased electrical field during pulsed-laser deposition. The (001) orientation of the films, which makes no contribution to their polarization, was effectively reduced by the in situ electrical field of strength of 70 V/cm. This results in a large increase of remnant polarization from 1.1 to 6.2 μC/cm2, and reduction of the coercive field from 70 to 50 kV/cm, comparing the films grown freely under the same condition. Furthermore, the films showed an excellent fatigue-free property of up to 1010 switching cycles. © 2001 American Institute of Physics.
Show PACS
81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
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