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31 Dec 2001

Volume 79, Issue 27, pp. 4479-4603

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Field emission characteristics of BN/GaN structure

Chiharu Kimura, Tomohide Yamamoto, Takamitsu Hori, and Takashi Sugino

Appl. Phys. Lett. 79, 4533 (2001); http://dx.doi.org/10.1063/1.1427755 (3 pages) | Cited 14 times

Online Publication Date: 13 March 2002

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n-type gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition are used to examine field emission characteristics. The electron concentration of the GaN is 2×1017 cm−3. In order to enhance the electric field, the GaN surface is roughened by hydrogen (H2) plasma treatment. Boron nitride (BN) films are grown on the roughened surface of the GaN by plasma-assisted chemical vapor deposition. The turn-on electric field between the anode and sample surface is estimated to be 12.4 and 8.8 V/μm from the field emission characteristics of the roughened GaN and the BN/GaN samples, respectively. It is demonstrated that BN coating is effective in improving the field emission characteristics.© 2001 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption

Study of Schottky barrier of Ni on p-GaN

L. S. Yu, D. Qiao, L. Jia, S. S. Lau, Y. Qi, and K. M. Lau

Appl. Phys. Lett. 79, 4536 (2001); http://dx.doi.org/10.1063/1.1428773 (3 pages) | Cited 19 times

Online Publication Date: 13 March 2002

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The Schottky barrier characteristics of Ni on p-GaN have been investigated using current–voltage–temperature (I–V–T) and capacitance–voltage characteristics (C–V) measurements. Barrier height values ranging from 2.68 to 2.87 eV were obtained from C–V measurements. The temperature dependence of I–V characteristics clearly indicated the dominance of tunneling current in the transport mechanism of the diodes, therefore, barrier height determination using I–V measurements can lead to erroneous results, as indicated by the wide range of barrier heights reported in the literature. Acceptor concentration, deduced from C–V measurements, was found to be of 1019/cm3 within 200 Å of the sample surface, and tapered off to be ∼ 1018/cm3. These values are 10–100 times higher than the hole concentration of ∼ 1017/cm3 obtained from Hall measurements. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Traps at the bonded interface in silicon-on-insulator structures

I. V. Antonova, O. V. Naumova, D. V. Nikolaev, V. P. Popov, J. Stano, and V. A. Skuratov

Appl. Phys. Lett. 79, 4539 (2001); http://dx.doi.org/10.1063/1.1428412 (2 pages) | Cited 7 times

Online Publication Date: 13 March 2002

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In this study, we compared the trap density distributions, Dit, in the band gap of silicon at the Si/thermal SiO2 interface and at the bonded interface of the silicon–on–insulator structure, deduced from deep level transient spectroscopy measurements. The trap energies for the bonded Si/SiO2 interface are localized in the range from Ec–0.17 to Ec–0.37 eV. The lack of the transient SiOx layer at the bonded interface is suggested to lead to a relatively narrow interval of trap energies. © 2001 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Hydrogen-induced transport properties of holes in diamond surface layers

C. E. Nebel, C. Sauerer, F. Ertl, M. Stutzmann, C. F. O. Graeff, P. Bergonzo, O. A. Williams, and R. Jackman

Appl. Phys. Lett. 79, 4541 (2001); http://dx.doi.org/10.1063/1.1429756 (3 pages) | Cited 31 times

Online Publication Date: 13 March 2002

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Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34–350 K. The sheet hole densities are weakly temperature dependent above a critical temperature Tc (20 K ⩽ Tc ⩽ 70 K), below Tc carriers freeze out. The mobilities of holes show a minimum at Tc increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present. © 2001 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena
72.80.Sk Insulators
72.20.My Galvanomagnetic and other magnetotransport effects
68.35.B- Structure of clean surfaces (and surface reconstruction)
72.20.Fr Low-field transport and mobility; piezoresistance
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