APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

31 Dec 2001

Volume 79, Issue 27, pp. 4479-4603

Return to All Sections
back to top
RSS Feeds

Near-field optical patterning on azo-hybrid sol–gel films

N. Landraud, J. Peretti, F. Chaput, G. Lampel, J.-P. Boilot, K. Lahlil, and V. I. Safarov

Appl. Phys. Lett. 79, 4562 (2001); http://dx.doi.org/10.1063/1.1428627 (3 pages) | Cited 31 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the near-field optical patterning of photochromic sol–gel films with subwavelength resolution. The sample containing functionalized azobenzene species is locally illuminated in the visible absorption band of these photochromes through the aperture of a metallized tapered optical fiber. The surface topography imaged by in situ shear-force microscopy reveals that, due to repeated photoisomerization cycles of the azobenzene molecules, photoinduced matter migration occurs under the tip leading to the formation of a surface relief. The shape of this structure is characteristic of the electromagnetic field distribution and strongly depends on the tip-to-sample distance. In near-field illumination conditions, protrusions of lateral dimension as small as 60 nm (≈λ/10) are currently produced. When repeating this process, compact arrays of nanodots are optically inscribed. © 2001 American Institute of Physics.
Show PACS
42.70.Jk Polymers and organics
68.47.Mn Polymer surfaces
68.37.Uv Near-field scanning microscopy and spectroscopy
42.79.Dj Gratings
61.41.+e Polymers, elastomers, and plastics
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.30.Qt Isomerization and rearrangement

Nanobelts of the dielectric material Ge3N4

Y. H. Gao, Y. Bando, and T. Sato

Appl. Phys. Lett. 79, 4565 (2001); http://dx.doi.org/10.1063/1.1428634 (3 pages) | Cited 28 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ge3N4 nanobelts 30–300 nm in width were synthesized by thermal reduction of a mixed Ge+SiO2 powder in NH3 atmosphere. These nanobelts were studied by high-resolution transmission electron microscope equipped with an x-ray energy dispersive spectrometer. In these synthesized nanobelts, the existence of α and β phases of Ge3N4 was identified. The α phase exhibiting slight difference from an ideal α-Ge3N4 phase was also found in the present Ge3N4 material. The mechanism of formation of the Ge3N4 nanobelts is discussed. © 2001 American Institute of Physics.
Show PACS
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide

Hak-Seung Han, Se-Young Seo, and Jung H. Shin

Appl. Phys. Lett. 79, 4568 (2001); http://dx.doi.org/10.1063/1.1419035 (3 pages) | Cited 89 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Optical gain at 1.54 μm in erbium-doped silicon-rich silicon oxide (SRSO) is demonstrated. Er-doped SRSO thin film was fabricated by electron-cyclotron resonance enhanced chemical vapor deposition of silicon suboxide with concurrent sputtering of erbium followed by a 5 min anneal at 1000 °C. Ridge-type single mode waveguides were fabricated by wet chemical etching. Optical gain of 4 dB/cm of an externally coupled signal at 1.54 μm is observed when the Er is excited via carriers generated in the Si nanoclusters by the 477 nm line of an Ar laser incident on the top of the waveguide at a pump power of 1.5 W cm−2. © 2001 American Institute of Physics.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Ap Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing

Patterned growth of single-walled carbon nanotubes on full 4-inch wafers

Nathan R. Franklin, Yiming Li, Robert J. Chen, Ali Javey, and Hongjie Dai

Appl. Phys. Lett. 79, 4571 (2001); http://dx.doi.org/10.1063/1.1429294 (3 pages) | Cited 76 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (107–108) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. © 2001 American Institute of Physics.
Show PACS
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Hc Catalytic methods
81.16.Nd Micro- and nanolithography

WS2 nanotubes containing single-walled carbon nanotube bundles

R. L. D. Whitby, W. K. Hsu, P. C. P. Watts, H. W. Kroto, D. R. M. Walton, and C. B. Boothroyd

Appl. Phys. Lett. 79, 4574 (2001); http://dx.doi.org/10.1063/1.1425467 (3 pages) | Cited 6 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-walled carbon nanotubes (SWCNs) encapsulated in multiwalled WS2 nanotubes are produced by pyrolyzing a mixture of WO3−x and SWCNs in N2/H2S atmosphere. © 2001 American Institute of Physics.
Show PACS
81.07.De Nanotubes
61.46.-w Structure of nanoscale materials

Critical lateral size for stress domain formation in InAs/GaAs square nanomesas: A multimillion-atom molecular dynamics study

Xiaotao Su, Rajiv K. Kalia, Aiichiro Nakano, Priya Vashishta, and Anupam Madhukar

Appl. Phys. Lett. 79, 4577 (2001); http://dx.doi.org/10.1063/1.1428621 (3 pages) | Cited 12 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lateral size effects on the stress distribution and morphology of InAs/GaAs square nanomesas are investigated using molecular dynamics (MD) method. Two mesas with the same vertical size but different lateral sizes are simulated. For the smaller mesa, a single stress domain is observed in the InAs overlayer, whereas two stress domains are found in the larger mesa. This indicates the existence of a critical lateral size for stress domain formation in accordance with recent experimental findings. The InAs overlayer in the larger mesa is laterally constrained to the GaAs bulk lattice constant but vertically relaxed to the InAs bulk lattice constant. © 2001 American Institute of Physics.
Show PACS
68.65.Hb Quantum dots (patterned in quantum wells)
62.20.-x Mechanical properties of solids
61.46.-w Structure of nanoscale materials

Selective processing of individual carbon nanotubes using dual-nanomanipulator installed in transmission electron microscope

Toru Kuzumaki, Hidetaka Sawada, Hideki Ichinose, Yasuhiro Horiike, and Tokushi Kizuka

Appl. Phys. Lett. 79, 4580 (2001); http://dx.doi.org/10.1063/1.1430022 (3 pages) | Cited 10 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanoscale processings such as deformation, cutting off, and bonding of individual carbon nanotubes (NTs) have been selectively performed using a dual-nanomanipulation system installed in a high-resolution transmission electron microscope. These processes are directly observed in situ at a lattice resolution of 0.1 nm. At high applied electric field between the NT tip and Au tip, we have found a carbon monolayer extending out from the carbon cluster which was deposited on the NT tip. The cutting off and bonding of individual NT tips can be performed by contacting the NT tips and the opposite nanometer-sized tips at an applied bias voltage. The threshold voltage of the processing is approximately 2 V. © 2001 American Institute of Physics.
Show PACS
81.07.De Nanotubes
81.16.Ta Atom manipulation
68.37.Lp Transmission electron microscopy (TEM)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Plasmon waveguide for optical far/near-field conversion

T. Yatsui, M. Kourogi, and M. Ohtsu

Appl. Phys. Lett. 79, 4583 (2001); http://dx.doi.org/10.1063/1.1428405 (3 pages) | Cited 59 times

Online Publication Date: 13 March 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A plasmon waveguide was designed and fabricated using a metal-coated silicon wedge structure that converts propagating far-field light to the near field. Illumination (λ = 830 nm) of the waveguide (plateau width 150 nm) caused transverse magnetic plasmon-mode excitation. Use of a near-field microscope allowed us to determine its beam width and propagation length as 150 nm and 2.5 μm, respectively. © 2001 American Institute of Physics.
Show PACS
42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close