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9 Jul 2001

Volume 79, Issue 2, pp. 145-277

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Scaling on hysteresis dispersion in ferroelectric systems

J.-M. Liu, H. L. W. Chan, C. L. Choy, Y. Y. Zhu, S. N. Zhu, Z. G. Liu, and N. B. Ming

Appl. Phys. Lett. 79, 236 (2001); http://dx.doi.org/10.1063/1.1384894 (3 pages) | Cited 40 times

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The hysteresis area as a function of frequency of the time-varying external electric field—hysteresis dispersion—for ferroelectric Pb(Zr0.52Ti0.48)O3 is measured, and the Monte-Carlo simulation on the hysteresis dispersion for a model ferroelectric lattice is performed too. We demonstrate the scaling behavior of the single-peaked hysteresis dispersion for the two ferroelectric systems, predicting a unique effective characteristic time for the domain reversal. This characteristic time shows an inversely linear dependence on the field amplitude as long as the amplitude is high enough that the reversible domain rotation response is negligible. © 2001 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Effect of acceptor and donor dopants on polarization components of lead zirconate titanate thin films

S. B. Majumder, B. Roy, R. S. Katiyar, and S. B. Krupanidhi

Appl. Phys. Lett. 79, 239 (2001); http://dx.doi.org/10.1063/1.1383057 (3 pages) | Cited 15 times

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We have compared the magnitudes of reversible and irreversible polarization components of sol–gel-derived Nd3+- and Fe3+-doped PZT (53/47) thin films on platinized silicon substrates. Beyond the switching field, it was found that the reversible component of the polarization remains almost constant both for donor- (Nd3+) and acceptor- (Fe3+) doped PZT films. The irreversible polarization component reduces with the increase in Nd3+ content, whereas it increases until 3 at. % Fe3+-doped PZT thin films. The dielectric behavior of these films at subswitching fields was analyzed in terms of Rayleigh law. The inverse of the Raleigh coefficient (υ) was considered as a measure of the obstacle for the domain-wall motion. In the case of Fe-doped PZT, the inverse of the Raleigh coefficient (υ) shows a declining linearity with Fe content, which may be found exactly opposite to that observed for Nd-doped PZT. The observed results are explained in terms of the nature of the defect-domain-wall interaction of acceptor-and-donor-doped PZT thin films. Studies indicated that in the case of Fe-doped PZT films, the possible defect interaction initiates only above 2 at. % and it was found to be much lower in magnitude in comparison with the Nd doping. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis

Polarization imprint and size effects in mesoscopic ferroelectric structures

M. Alexe, C. Harnagea, D. Hesse, and U. Gösele

Appl. Phys. Lett. 79, 242 (2001); http://dx.doi.org/10.1063/1.1385184 (3 pages) | Cited 77 times

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Piezoresponse scanning force microscopy measurements performed on lead zirconate titanate mesoscopic structures revealed a negative shift of the initial piezoelectric hysteresis loop. The shift is dependent on the size of the structure and is most probably due to the pinning of ferroelectric domains at the free lateral surface and ferroelectric–electrode interface. Considering a simple model, the thickness of the pinned domain layers is found to be about 15 and 70 nm at the ferroelectric–electrode interface and lateral free surface, respectively. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects

Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

Sanghun Jeon, Chel-Jong Choi, Tae-Yeon Seong, and Hyunsang Hwang

Appl. Phys. Lett. 79, 245 (2001); http://dx.doi.org/10.1063/1.1385347 (3 pages) | Cited 52 times

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The electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 were investigated for use in metal–oxide–semiconductor gate dielectric applications. Compared with conventional ZrO2, ZrOxNy exhibits excellent electrical characteristics such as high accumulation capacitance, low leakage current density, and superior thermal stability. Based on high resolution transmission electron microscope analysis of both ZrO2 and ZrOxNy samples which had been annealed at 800 °C for 5 min, the ZrO2 exhibited a polycrystalline state but the ZrOxNy was amorphous in structure. In addition, the thickness of ZrOxNy was thinner than that of ZrO2. The improvement in electrical characteristics can be explained by the better thermal stability and lower rate of oxidation of ZrOxNy. © 2001 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
61.72.Cc Kinetics of defect formation and annealing
68.60.Dv Thermal stability; thermal effects
85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology

Electrophoretic deposition of pure and MgO-modified Ba0.6Sr0.4TiO3 thick films for tunable microwave devices

E. Ngo, P. C. Joshi, M. W. Cole, and C. W. Hubbard

Appl. Phys. Lett. 79, 248 (2001); http://dx.doi.org/10.1063/1.1384899 (3 pages) | Cited 53 times

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We report on the structural, dielectric, and optical properties of barium strontium titanate–magnesium oxide composite (BST-MgO) thick films fabricated by the electrophoretic deposition technique. The structure and morphology of the films were analyzed by x-ray diffraction and scanning electron microscopy, respectively. The films were optically characterized via FT-Raman spectroscopy. The dielectric measurements were conducted on metal–insulator–metal capacitors using platinum as the top and bottom electrodes. The typical small signal dielectric constants of Ba0.60Sr0.40TiO3 and Ba0.60Sr0.40TiO3–20 wt % MgO thick films, measured at an applied frequency of 1 MHz, were 603 and 327, respectively. The corresponding values of dissipation factor were 0.029 and 0.002, respectively. A high dielectric tunability of 17.3% was obtained for Ba0.60Sr0.40TiO3 thick films at an applied electric field of 20 kV/cm. The dielectric properties of the present thick films were comparable to those of the bulk ceramics; suggesting their suitability for high-frequency wide-band voltage-tunable device applications.
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85.40.Xx Hybrid microelectronics; thick films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.40.Lj Microwave integrated electronics
81.05.Mh Cermets, ceramic and refractory composites

Dielectric and ferroelectric properties of SrBi4Ti4O15 single crystals

Hiroshi Irie and Masaru Miyayama

Appl. Phys. Lett. 79, 251 (2001); http://dx.doi.org/10.1063/1.1384480 (3 pages) | Cited 57 times

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SrBi4Ti4O15 single crystals were grown, and their dielectric and ferroelectric properties were investigated along the a(b) axis and c axis, separately. The dielectric permittivity at 1 MHz was 1900 along the a(b) axis at the Curie temperature of 520 °C. This value was ten times higher than that along the c axis. With respect to the ferroelectricity, the saturated remanent polarization was 29 μC/cm2 and the saturated coercive field was 26 kV/cm along the a(b) axis under an electric field of 59 kV/cm, and ferroelectricity was not observed along the c axis. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation

Effects of strain on the dielectric properties of tunable dielectric SrTiO3 thin films

S. Hyun and K. Char

Appl. Phys. Lett. 79, 254 (2001); http://dx.doi.org/10.1063/1.1384893 (3 pages) | Cited 48 times

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We fabricated an epitaxial Au/SrTiO3(001)/SrRuO3 (or CaRuO3)(001)/SrTiO3 (or LaAlO3)(001) heterostructure to investigate the effect of the strain on the epitaxial tunable dielectric thin films. SrTiO3 thin films showed very different dielectric properties depending on the bottom electrode with an opposite lattice mismatch. The SrTiO3 thin films grown on the CaRuO3 bottom electrodes showed nearly a two times larger tunability than that on SrRuO3. We think this is due to the different strain on the SrTiO3 thin films. The tensile strain along the applied electric field in the parallel plate capacitor enhances the dielectric constant and the tunability, while the compressive strain decreases them. We believe this is consistent with the hardening of the soft mode phonon due to the compressive strain. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.60.Bs Mechanical and acoustical properties
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