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9 Jul 2001

Volume 79, Issue 2, pp. 145-277

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Metal-insulator-vacuum type electron emission from N-containing chemical vapor deposited diamond

Ken Okano, Takatoshi Yamada, Atsuhito Sawabe, Satoshi Koizumi, Junji Itoh, and Gehan A. J. Amaratunga

Appl. Phys. Lett. 79, 275 (2001); http://dx.doi.org/10.1063/1.1385341 (3 pages) | Cited 24 times

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This letter presents a clear explanation of the electron emission mechanism of the high-resistivity N-doped diamond cathode. Due to the very low barrier to emission of electrons from the N-doped diamond conduction band into vacuum, electrons in the conduction band of diamond can establish an appreciable leakage current at very low anode voltage. When such a current starts to flow, there is a field which is developed across the diamond bulk. This field is observed as an increase in the electric field at the back contact, causing the injected tunneling current increases exponentially. This process leads to the low threshold emission from the high resistivity N-doped diamond cathode. © 2001 American Institute of Physics.
Show PACS
81.05.U- Carbon/carbon-based materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.70.+q Field emission, ionization, evaporation, and desorption
85.45.Db Field emitters and arrays, cold electron emitters
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