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9 Jul 2001

Volume 79, Issue 2, pp. 145-277

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Large area dense nanoscale patterning of arbitrary surfaces

Miri Park, P. M. Chaikin, Richard A. Register, and Douglas H. Adamson

Appl. Phys. Lett. 79, 257 (2001); http://dx.doi.org/10.1063/1.1378046 (3 pages) | Cited 71 times

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We demonstrate a large-area fabrication of hexagonally ordered metal dot arrays with an area density of ∼ 1011/cm2. We produced 20 nm dots with a 40 nm period by combining block copolymer nanolithography and a trilayer resist technique. A self-assembled spherical-phase block copolymer top layer spontaneously generated the pattern, acting as a template. The pattern was first transferred to a silicon nitride middle layer by reactive ion etch, producing holes. The nitride layer was then used as a mask to further etch into a polyimide bottom layer. The metal dots were produced by an electron beam evaporation followed by a lift-off process. Our method provides a viable route for highly dense nanoscale patterning of different materials on arbitrary surfaces. © 2001 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electric field-induced carbon nanotube junction formation

G. W. Ho, A. T. S. Wee, and J. Lin

Appl. Phys. Lett. 79, 260 (2001); http://dx.doi.org/10.1063/1.1383279 (3 pages) | Cited 27 times

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We present experimental evidence of nanojunction structures explicitly observed after application of high electric fields on multiwall carbon nanotube arrays. The electric field as well as thermal effects result in carbon–carbon bond breaking and redeposition leading to nanojunction formation. The growth mechanism of the nanojunction is believed to be open-ended topological defect growth in which carbon atoms at two adjacent nanotube tips chemically react and fuse forming an array of nanojunctions. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.De Nanotubes

Influence of the wetting-layer growth kinetics on the size and shape of Ge self-assembled quantum dots on Si(001)

H. J. Kim and Y. H. Xie

Appl. Phys. Lett. 79, 263 (2001); http://dx.doi.org/10.1063/1.1383274 (3 pages) | Cited 10 times

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The growth temperature of the wetting layer is used as the key variable in the study of a series of Ge self-assembled quantum dots on Si(001) substrates. A relaxed SiGe buffer layer is used for most of the samples as a means of maintaining the density of Ge dots. Ge dots are in the shapes of pyramids, domes, and superdomes, similar to those reported in the literature. A significant difference in the fraction of pyramids is observed between samples with wetting layers grown at low (280 °C) and high (650 °C) temperatures. This difference is in turn dependent on the total amount of Ge deposited or equivalently, the average size of dots. These observations point to the presence of Si during the initial stage of Ge dot formation and that the fraction of pyramids as well as the critical size for the transition from pyramids to domes are influenced by the presence of Si. © 2001 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
81.05.Cy Elemental semiconductors
81.16.Dn Self-assembly
68.55.-a Thin film structure and morphology

Ballistic switching and rectification in single wall carbon nanotube Y junctions

Antonis N. Andriotis, Madhu Menon, Deepak Srivastava, and Leonid Chernozatonskii

Appl. Phys. Lett. 79, 266 (2001); http://dx.doi.org/10.1063/1.1385194 (3 pages) | Cited 38 times

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Transport properties of various semiconducting zig-zag carbon nanotube Y junctions are studied for the investigations of rectification and switching. Our results indicate that such junctions, when symmetric, can support both ballistic rectification and/or the ballistic switching operating modes. Although structural symmetry of the Y junction is found to be a necessary condition for rectification, it may not be sufficient in all cases. © 2001 American Institute of Physics.
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73.63.Fg Nanotubes
73.40.Ei Rectification
73.23.Ad Ballistic transport
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.35.Kt Nanotube devices

Drastic change of phase interference by small diffusion of heavy-mass electrode atoms in carbon nanotubes and phase switching device

Junji Haruyama, Izumi Takesue, and Tetsuro Hasegawa

Appl. Phys. Lett. 79, 269 (2001); http://dx.doi.org/10.1063/1.1385183 (3 pages) | Cited 4 times

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We slightly diffuse atoms of electrode materials into one end of multiwalled carbon nanotubes (MWNTs), grown using nanoporous alumina membranes. Diffusion of the light-mass materials (carbon and aluminum) lead to weak localization in Altshuler–Aronov–Spivak oscillation, consistent with past reports. In contrast, we find that diffusion of heavy-mass materials (gold and platinum) at the volume ratio of only about 5% change this weak localization to antilocalization. It is understood by a drastic change of the phase interference caused by the injection of spin-flipped electrons due to spin–orbit interaction in the diffusion region, in the entire part of the MWNTs. We also propose an electron-wave phase switching circuit using this effect. © 2001 American Institute of Physics.
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73.63.Fg Nanotubes
85.35.Kt Nanotube devices
73.23.-b Electronic transport in mesoscopic systems
85.35.Ds Quantum interference devices
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
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