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9 Jul 2001

Volume 79, Issue 2, pp. 145-277

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Modeling multilayer woven fabrics

J. A. Åström, J. P. Mäkinen, and J. Timonen

Appl. Phys. Lett. 79, 180 (2001); http://dx.doi.org/10.1063/1.1385350 (2 pages) | Cited 1 time

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A numerical algorithm for nonlinear elastic relaxation of a multilayer woven fabric is introduced and tested. The equilibrium solutions are compared with real samples. An excellent result is obtained in spite of two simplifications: Bending stiffness of the fibers and friction between the fibers are both neglected. The numerical simulation is very fast and cost efficient in the search for optimal fabrics. © 2001 American Institute of Physics.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity

Degradation kinetics of thermal oxides

Fernanda Irrera

Appl. Phys. Lett. 79, 182 (2001); http://dx.doi.org/10.1063/1.1385193 (3 pages) | Cited 8 times

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In this letter I propose a kinetics model of trap creation in thermal oxides under electrical stress. The model is based on the idea that electrons drifted in the oxide conduction band by the stress field undergo scattering by existing defects. The process controls the creation of additional traps. The kinetics model predicts a square root dependence on the stress time. Model results are validated by experimental data of stress induced leakage current. Defect concentrations calculated with my kinetics model were used in a trap-assisted model and yielded excellent fits of the low-field conductivity © 2001 American Institute of Physics.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.55.Ht Other nonmetals
85.30.De Semiconductor-device characterization, design, and modeling

Effect of water absorption on the residual stress in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

S. P. Kim, S. K. Choi, Youngsoo Park, and Ilsub Chung

Appl. Phys. Lett. 79, 185 (2001); http://dx.doi.org/10.1063/1.1383278 (3 pages) | Cited 10 times

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Fluorinated silicon-oxide (SiOF) films were produced by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition. The effect of water absorption on the film properties was studied by measuring the residual stress as a function of exposure time to room air. The residual stress shows an increase of the compressive component as the film absorbs water. However, the chemical bonding structure does not change after the water absorption. The residual stress returns to the initial value when the film is dried. It is suggested that the water absorption occurs entirely by physical adsorption of H2O molecules to Si–F bonds. © 2001 American Institute of Physics.
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73.61.Ng Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
52.77.Dq Plasma-based ion implantation and deposition

Nanoparticles and nanoballoons of amorphous boron coated with crystalline boron nitride

Shojiro Komatsu, Yoshiki Shimizu, Yusuke Moriyoshi, Katsuyuki Okada, and Mamoru Mitomo

Appl. Phys. Lett. 79, 188 (2001); http://dx.doi.org/10.1063/1.1383059 (3 pages) | Cited 8 times

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Solid- and hollow-cored nanoparticles of amorphous boron coated with crystalline boron nitride (BN) have been synthesized by pulsed-laser vaporization of BN, where the laser plume was controlled with a modulated plasma jet. The hollow particles (nanoballoons) were coated with BN both on the interior and exterior surfaces. The solid particles ranged from a few to 40 nm in their size. The typical diameter of the hollow particles and their wall thickness were about 200 and 30 nm, respectively. The nanoballoons were obtained only when the plasma modulation was synchronized with the ArF excimer-laser pulses. © 2001 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
61.43.Er Other amorphous solids
52.77.Dq Plasma-based ion implantation and deposition
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Lateral heterogeneity in the surface composition after laser processing of Ti/Si interface contaminated with oxygen

R. Larciprete, A. Danailov, A. Barinov, L. Casalis, L. Gregoratti, and M. Kiskinova

Appl. Phys. Lett. 79, 191 (2001); http://dx.doi.org/10.1063/1.1384902 (3 pages) | Cited 3 times

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The lateral variations in the surface composition of an oxygen-contaminated Ti/Si(001) interface processed by pulsed laser annealing were investigated by synchrotron radiation x-ray photoemission spectromicroscopy. It has been found that SiO2, which segregates on top of the Ti silicide film, appears only in a circular edge region of the laser spots and is completely absent in the hotter internal area, where SiO evaporation has occurred. The results demonstrate that the temperature gradient within the laser-irradiated area can affect substantially the lateral homogeneity of the fabricated interfaces, an important issue for microdevice technology. © 2001 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
79.60.Jv Interfaces; heterostructures; nanostructures
81.05.Cy Elemental semiconductors
68.35.Ct Interface structure and roughness

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, and J.-P. Faurie

Appl. Phys. Lett. 79, 194 (2001); http://dx.doi.org/10.1063/1.1384907 (3 pages) | Cited 48 times

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The structural properties of high-quality (0001)ZnO/Al2O3 films grown by plasma-enhanced molecular-beam epitaxy are investigated by x-ray diffraction and transmission electron microscopy. The only defects encountered are threading dislocations with a density of 1010–4×1010 cm−2. Most numerous dislocations are pure-edge dislocations (Burgers vector of 1/3〈11math0〉), which accommodate slight in-plane misorientations between subgrains. The oxygen polarity of these films is also established. © 2001 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.05.cp X-ray diffraction
68.37.Lp Transmission electron microscopy (TEM)

Bipolar phototransport in π-conjugated polymer /C60 composites

I. Balberg, R. Naidis, M.-K. Lee, J. Shinar, and L. F. Fonseca

Appl. Phys. Lett. 79, 197 (2001); http://dx.doi.org/10.1063/1.1383801 (3 pages) | Cited 10 times

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Conjugated polymer/fullerene composite films that exhibit steady-state phototransport properties of a unipolar or bipolar photoconductor, depending on the relative concentration of the components, are described. The observed behavior of the composites, in which each component has its own percolation path but its carrier content is not high enough to quench the carriers in the other component, is shown to be due to the coupling of the recombination processes in the two components. © 2001 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
73.61.Wp Fullerenes and related materials
72.80.Tm Composite materials
72.40.+w Photoconduction and photovoltaic effects
71.20.Rv Polymers and organic compounds
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
71.20.Tx Fullerenes and related materials; intercalation compounds
73.50.Pz Photoconduction and photovoltaic effects
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